公开(公告)号：US20220345649A1

公开(公告)日：2022-10-27

申请号：US17860878

申请日：2022-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungbin YUN ,  Hwanwoong KIM ,  Eunsub SHIM ,  Kyungho LEE ,  Hongsuk LEE

IPC: H04N5/355 ,  H04N5/343 ,  H04N5/369 ,  H04N5/374

Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

公开(公告)号：US20220199660A1

公开(公告)日：2022-06-23

申请号：US17392925

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoon LEE ,  Kyungho LEE ,  Jungbin YUN ,  Jihun KIM

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

Abstract: A pixel group of an image sensor includes first through fourth unit pixels in a matrix form of two pixels rows and two pixel columns, and a common floating diffusion region in a semiconductor substrate at a center of the pixel group and shared by the first through fourth unit pixels. Each of the first through fourth unit pixels includes a photoelectric conversion element in the semiconductor substrate, and a pair of vertical transfer gates in the semiconductor substrate and extending in a vertical direction perpendicular to a surface of the semiconductor substrate. The pair of vertical transfer gates transfer photo charges collected by the photoelectric conversion element to the common floating diffusion region. Image quality is enhanced by increasing sensing sensitivity of the unit pixel through the shared structure of the floating diffusion region and the symmetric structure of the vertical transfer gates.

公开(公告)号：US20230362505A1

公开(公告)日：2023-11-09

申请号：US18221921

申请日：2023-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungbin YUN ,  Hwanwoong KIM ,  Eunsub SHIM ,  Kyungho LEE ,  Hongsuk LEE

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H04N25/59 ,  H04N25/709 ,  H04N25/42 ,  H04N25/76 ,  H01L27/14603 ,  H01L27/14645 ,  H01L27/14621

Abstract: An image sensor includes: a first pixel connected to a column line; and a second pixel connected to the column line. Each of the first pixel and the second pixel includes: one photodiode; a first floating diffusion region; a second floating diffusion region; one first transistor connected between the one photodiode and the first floating diffusion region; a second transistor connected between the first floating diffusion region and the second floating diffusion region; a third transistor connected to the second floating diffusion region; a fourth transistor including a gate connected to the first floating diffusion region; and a fifth transistor including a drain connected to a source of the fourth transistor and a source connected to the column line. The second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are electrically connected without an intermediate transistor.

公开(公告)号：US20220344389A1

公开(公告)日：2022-10-27

申请号：US17572180

申请日：2022-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyung PYO ,  Jungbin YUN ,  Kyungho LEE ,  Seungjoon LEE ,  Wooseok CHOI

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor is provided. The image sensor includes: a pixel array including first and second pixel groups, each of which includes unit pixels arranged in 4×4 array, each of the unit pixels including a photodiode provided, and the first and second pixel groups being alternately disposed in multiple directions; a logic circuit configured to acquire pixel signals from the unit pixels; first microlenses provided on corresponding unit pixels in the first pixel groups; and second microlenses provided on four corresponding unit pixels of the unit pixels included in the second pixel groups. Each of the first and second pixel groups includes a device isolation layer provided between the unit pixels, and a color filter provided on the first surface, and each of the second pixel groups includes an overflow region configured to move electrical charges between adjacent photodiodes.

公开(公告)号：US20200336680A1

公开(公告)日：2020-10-22

申请号：US16670216

申请日：2019-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungjoon LEE ,  Jungbin YUN ,  Younghwan PARK ,  Jeongjin CHO

IPC: H04N5/343 ,  H01L27/146

Abstract: A light sensing circuit and an image sensor are provided. The image sensor includes a first pixel unit including a plurality of first photodiodes and a first driving circuit to generate a first pixel signal based on an amount of charges stored in the plurality of first photodiodes, a second pixel unit including a plurality of second photodiodes and a second driving circuit to generate a second pixel signal based on an amount of charges stored in the plurality of second photodiodes, and a switching circuit connected to the first driving circuit through a first diffusion node and connected to the second driving circuit through a second diffusion node. The switching circuit connects or disconnects the first diffusion node and the second diffusion node based on a mode selection signal.

公开(公告)号：US20220210348A1

公开(公告)日：2022-06-30

申请号：US17470302

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jueun PARK ,  Jungbin YUN ,  Kyungho LEE ,  Sanghyuck MOON ,  Hongsuk LEE

IPC: H04N5/353 ,  H04N5/3745

Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

公开(公告)号：US20220116557A1

公开(公告)日：2022-04-14

申请号：US17495052

申请日：2021-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsuk LEE ,  Sanghyuck MOON ,  Jueun PARK ,  Jungbin YUN

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

Abstract: A pixel array for an image sensor includes: a first pixel including a floating diffusion node, and a first selection transistor configured to output a first pixel signal generated using a voltage of the floating diffusion node of the first pixel; a second pixel including a floating diffusion node, and a second selection transistor configured to output a second pixel signal generated using a voltage of the floating diffusion node of the second pixel; and a column line connected to the first and second selection transistors. The floating diffusion nodes of the first and second pixels may be configured to be electrically connected to each other, and the first selection transistor and the second selection transistor may be configured to be turned on so that the first pixel signal and the second pixel signal are output to the column line, in a low conversion gain mode.

公开(公告)号：US20210144315A1

公开(公告)日：2021-05-13

申请号：US16997234

申请日：2020-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungbin YUN ,  Hwanwoong Kim ,  Eunsub Shim ,  Kyungho Lee ,  Hongsuk Lee

IPC: H04N5/343 ,  H04N5/369 ,  H04N5/374

Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.