公开(公告)号：US20210249417A1

公开(公告)日：2021-08-12

申请号：US17240486

申请日：2021-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hui-Jung Kim ,  Min Hee Cho ,  Bong-Soo Kim ,  Junsoo Kim ,  Satoru Yamada ,  Wonsok Lee ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L21/28 ,  H01L29/49 ,  H01L29/06

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

公开(公告)号：US10991699B2

公开(公告)日：2021-04-27

申请号：US16820006

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hui-Jung Kim ,  Min Hee Cho ,  Bong-Soo Kim ,  Junsoo Kim ,  Satoru Yamada ,  Wonsok Lee ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L21/28 ,  H01L29/49 ,  H01L29/06

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.