公开(公告)号：US08796845B2

公开(公告)日：2014-08-05

申请号：US13286494

申请日：2011-11-01

Applicant: Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

Inventor： Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

IPC: H01L23/02 ,  H01L23/06 ,  H01L23/04

CPC classification number: B81C1/00333 ,  B81C2203/0145

Abstract: An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

Abstract translation: 根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

公开(公告)号：US08592925B2

公开(公告)日：2013-11-26

申请号：US12351758

申请日：2009-01-09

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H01L29/84

CPC classification number: B81B3/007 ,  B81C2203/0163 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A functional device includes: a substrate; a functional structure formed on the substrate; a cavity in which the functional structure is disposed; and a cover which covers the cavity, wherein the cover includes a bumpy structure including rib shaped portions, or groove shaped portions, which cross a covering range covering at least the cavity.

Abstract translation: 功能元件包括：基板; 形成在基板上的功能结构; 其中设置有所述功能结构的空腔; 以及覆盖所述空腔的盖，其中所述盖包括包括肋形部分或凹槽形部分的颠簸结构，所述凹形结构部分交叉覆盖至少所述腔的覆盖范围。

公开(公告)号：US08395227B2

公开(公告)日：2013-03-12

申请号：US13344964

申请日：2012-01-06

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08362577B2

公开(公告)日：2013-01-29

申请号：US13012099

申请日：2011-01-24

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Abstract translation: 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。

公开(公告)号：US07994594B2

公开(公告)日：2011-08-09

申请号：US12045990

申请日：2008-03-11

Applicant: Shogo Inaba ,  Akira Sato

Inventor： Shogo Inaba ,  Akira Sato

IPC: H01L29/84

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US07671430B2

公开(公告)日：2010-03-02

申请号：US11928519

申请日：2007-10-30

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L21/66

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US06479342B1

公开(公告)日：2002-11-12

申请号：US09491760

申请日：2000-01-27

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H01L218242

CPC classification number: H01L27/0805 ,  H01L23/5222 ,  H01L23/552 ,  H01L27/0203 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/908 ,  H01L2924/00

Abstract: Embodiments include semiconductor devices and methods of manufacture, one of which includes a capacitor unit formed on a silicon substrate. The capacitor unit is divided into a plurality of capacitor subunits which are partitioned from each other by a separating insulation layer. Each of the capacitor subunits includes a first electrode layer composed of an impurity diffusion layer formed in the silicon substrate, a second electrode layer composed of a conductive polysilicon layer and a dielectric layer composed of a silicon oxide layer interposed between the first electrode layer and the second electrode layer. The respective capacitor subunits are connected in parallel to each other through a connector.

Abstract translation: 实施例包括半导体器件和制造方法，其中之一包括形成在硅衬底上的电容器单元。 电容器单元被分成多个电容器子单元，它们通过分离绝缘层彼此分隔开。 每个电容器子单元包括由在硅衬底中形成的杂质扩散层构成的第一电极层，由导电多晶硅层构成的第二电极层和介于第一电极层和第二电极层之间的氧化硅层构成的电介质层 第二电极层。 相应的电容器子单元通过连接器彼此并联连接。

公开(公告)号：US08525277B2

公开(公告)日：2013-09-03

申请号：US13079988

申请日：2011-04-05

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H01L29/84

CPC classification number: B81B3/0081 ,  B81B2207/99 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A MEMS device includes a substrate, an insulating layer section formed above the substrate and having a cavity, a functional element contained in the cavity, and a fuse element contained in the cavity and electrically connected with the functional element. It is preferable that the fuse element is spaced apart from the substrate.

Abstract translation: MEMS器件包括衬底，形成在衬底上方并具有空腔的绝缘层部分，包含在空腔中的功能元件和容纳在腔中并与功能元件电连接的熔丝元件。 优选地，熔丝元件与基板间隔开。

公开(公告)号：US08305152B2

公开(公告)日：2012-11-06

申请号：US12974258

申请日：2010-12-21

Applicant: Toru Watanabe ,  Shogo Inaba ,  Ryuji Kihara

Inventor： Toru Watanabe ,  Shogo Inaba ,  Ryuji Kihara

IPC: H03B5/30 ,  H03H9/205

CPC classification number: H03B5/30 ,  H03H3/0072 ,  H03H9/2457

Abstract: An oscillator includes: a plurality of MEMS vibrators formed on a substrate; and an oscillator configuration circuit connected to the plurality of MEMS vibrators, wherein the plurality of MEMS vibrators each have a beam structure, and the respective beam structures are different, whereby their resonant frequencies are different.

Abstract translation: 振荡器包括：形成在基板上的多个MEMS振动器; 以及连接到所述多个MEMS振动器的振荡器配置电路，其中所述多个MEMS振子各自具有波束结构，并且所述各个波束结构不同，由此它们的谐振频率不同。

公开(公告)号：US20120012950A1

公开(公告)日：2012-01-19

申请号：US13243916

申请日：2011-09-23

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H01L29/84 ,  H01L21/20

CPC classification number: B81B3/007 ,  B81C2203/0163 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A functional device includes: a substrate; a functional structure formed on the substrate; a cavity in which the functional structure is disposed; and a cover which covers the cavity, wherein the cover includes a bumpy structure including rib shaped portions, or groove shaped portions, which cross a covering range covering at least the cavity.

Abstract translation: 功能元件包括：基板; 形成在基板上的功能结构; 其中设置有所述功能结构的空腔; 以及覆盖所述空腔的盖，其中所述盖包括包括肋形部分或凹槽形部分的颠簸结构，所述凹形结构部分交叉覆盖至少所述腔的覆盖范围。