THIN-FILM CAPACITOR
    21.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号:US20180102219A1

    公开(公告)日:2018-04-12

    申请号:US15725860

    申请日:2017-10-05

    Abstract: A thin-film capacitor including a stacked body having a lower electrode layer, a plurality of dielectric layers stacked on the lower electrode layer, one or more internal electrode layers interposed between the dielectric layers, and an upper electrode layer that is stacked on the opposite side of the lower electrode layer with the dielectric layers and the internal electrode layers interposed between, and a cover layer that covers the stacked body. The stacked body includes opening portions that have the lower electrode layer, opens upward in a stacking direction, and has a side surface formed to include an inclined surface. The cover layer is stacked on the inclined surface of the stacked body. A curved surface with a predetermined shape is formed on the inclined surface for each pair of layers including the dielectric layer forming the inclined surface and the electrode layer, forming the inclined surface.

    ELECTRONIC COMPONENT EMBEDDED SUBSTRATE
    22.
    发明申请

    公开(公告)号:US20180027660A1

    公开(公告)日:2018-01-25

    申请号:US15654281

    申请日:2017-07-19

    Abstract: An electronic component embedded substrate 1 includes a substrate 10 having a wiring layer 11 and an insulating layer 12; an electronic component 20 built in the substrate 10, and having a pair of electrode layers 21A and 21B, and a dielectric layer 22; and a stress relieving layer 30 provided closer to the wiring layer 11 than the insulating layer 12 is in the lamination direction, wherein at least part of an end portion of the electronic component 20 on the wiring layer 11 side is in contact with the stress relieving layer 30, wherein at least part of an end portion of the electronic component 20 on the insulating layer 12 side is in contact with the insulating layer 12, and wherein the Young's modulus of the stress relieving layer 30 is lower than the Young's modulus of the electrode layer 21B.

    ELECTRONIC COMPONENT
    24.
    发明公开

    公开(公告)号:US20230397338A1

    公开(公告)日:2023-12-07

    申请号:US18449095

    申请日:2023-08-14

    CPC classification number: H05K1/188 H05K3/305 H05K3/4644 H05K2201/0183

    Abstract: An electronic component has: a conductor layer M1 formed on a substrate and including lower electrodes of a capacitor; a dielectric film covering the top and side surfaces of each of the lower electrodes; upper electrodes of the capacitor which are formed on the top surfaces of the respective lower electrodes through the dielectric film; and an adhesive film disposed between the dielectric film and the top and side surfaces of each of the lower electrodes. The adhesive film is thus disposed between the dielectric film and the top and side surfaces of each of the lower electrodes.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME

    公开(公告)号:US20230260698A1

    公开(公告)日:2023-08-17

    申请号:US18012834

    申请日:2020-12-24

    CPC classification number: H01G4/01 H01L25/16 H01G4/33 H01L24/16

    Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME

    公开(公告)号:US20230253446A1

    公开(公告)日:2023-08-10

    申请号:US18012809

    申请日:2020-12-24

    CPC classification number: H01L28/75 H01L28/84 H01G4/008 H01G4/33

    Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

    ELECTRONIC COMPONENT AND ITS MANUFACTURING METHOD

    公开(公告)号:US20230005667A1

    公开(公告)日:2023-01-05

    申请号:US17784857

    申请日:2020-12-04

    Abstract: An electronic component includes: a conductive pattern provided on the main surface of a substrate and constituting a lower electrode; a dielectric film that covers top and side surfaces of the conductive pattern; and a conductive pattern stacked on the top surface of the conductive pattern through the dielectric film and constituting an upper electrode. A part of the dielectric film that is parallel to the main surface of the substrate is removed at least partly. Partially removing a part of the dielectric film that is parallel to the main surface of the substrate allows stress relaxation. This prevents peeling at the interface between the lower electrode and the dielectric film.

    ELECTRIC COMPONENT EMBEDDED STRUCTURE

    公开(公告)号:US20210057296A1

    公开(公告)日:2021-02-25

    申请号:US16754395

    申请日:2018-10-25

    Abstract: In an electric component embedded structure, a first electrode terminal provided on a first main surface includes an intra-area terminal, and the intra-area terminal is electrically connected to an overlap portion of an overlap wiring in a formation area of an electric component. Accordingly, a decrease in mounting area of the electric component embedded structure is achieved. The intra-area terminal can be electrically connected to a second electrode terminal provided on a second main surface via a first via-conductor, the overlap wiring, and a second via-conductor. The intra-area terminal is connected to a wiring (an overlap wiring) of a first insulating layer without additionally providing a rewiring layer causing an increase in thickness, and the increase in thickness is curbed, whereby a decrease in size of the electric component embedded structure is achieved.

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