公开(公告)号：US20210047176A1

公开(公告)日：2021-02-18

申请号：US16542489

申请日：2019-08-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Wen Cheng Kuo

IPC: B81C1/00 ,  B81B7/00

Abstract: Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

公开(公告)号：US10715924B2

公开(公告)日：2020-07-14

申请号：US16016996

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai

IPC: H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.

公开(公告)号：US10609463B2

公开(公告)日：2020-03-31

申请号：US15797813

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Wen-Cheng Kuo ,  Chia-Hua Chu ,  Chun-Yin Tsai ,  Tzu-Heng Wu

IPC: H04R1/08 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.

公开(公告)号：US10155244B2

公开(公告)日：2018-12-18

申请号：US14027368

申请日：2013-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Jung-Huei Peng ,  Yi-Shao Liu ,  Fei-Lung Lai ,  Shang-Ying Tsai

IPC: H01L21/66 ,  B01J19/00 ,  B05C11/10 ,  G01R31/28 ,  G01R1/067 ,  G01N27/414 ,  B05D1/18 ,  B05D5/04

Abstract: The present disclosure relates to a micro-fluidic probe card that deposits a fluidic chemical onto a substrate with a minimal amount of fluidic chemical waste, and an associated method of operation. In some embodiments, the micro-fluidic probe card has a probe card body with a first side and a second side. A sealant element, which contacts a substrate, is connected to the second side of the probe card body in a manner that forms a cavity within an interior of the sealant element. A fluid inlet, which provides a fluid from a processing tool to the cavity, is a first conduit extending between the first side and the second side of the probe card body. A fluid outlet, which removes the fluid from the cavity, is a second conduit extending between the first side and the second side of the probe card body.

公开(公告)号：US20170322177A1

公开(公告)日：2017-11-09

申请号：US15661798

申请日：2017-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L21/84 ,  H01L51/00 ,  H01L27/12

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US09567206B2

公开(公告)日：2017-02-14

申请号：US14276295

申请日：2014-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Shang-Ying Tsai ,  Chin-Wei Liang

IPC: B81B7/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B7/02 ,  B81C1/00238 ,  B81C1/00293

Abstract: A micro-electro mechanical system (MEMS) device is provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber between the MEMS substrate and the cap substrate, and the first movable element is in the first closed chamber. The MEMS device further includes an outgassing layer in the first closed chamber. In addition, the MEMS device includes a second closed chamber between the MEMS substrate and the cap substrate, and the second movable element is in the second closed chamber.

Abstract translation: 提供了微机电系统（MEMS）装置。 MEMS器件包括盖衬底和与衬底接合的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括在MEMS衬底和盖衬底之间的第一封闭腔室，并且第一可移动元件位于第一封闭腔室中。 MEMS装置还包括在第一封闭室中的除气层。 另外，MEMS器件包括在MEMS衬底和盖衬底之间的第二闭合腔，并且第二可移动元件位于第二闭合腔中。

公开(公告)号：US09488615B2

公开(公告)日：2016-11-08

申请号：US14573162

申请日：2014-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Fei-Lung Lai ,  Chia-Hua Chu ,  Yi-Hsien Chang ,  Hsin-Chieh Huang

IPC: G01N27/414 ,  H01L23/498 ,  H01L21/48

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L21/486 ,  H01L23/5226 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor having horizontal and vertical sensing surfaces. In some embodiments, the integrated chip has a sensing device disposed within a semiconductor substrate. A back-end-of the line (BEOL) metallization stack with a plurality of metal interconnect layers electrically coupled to the sensing device is arranged within an inter-level dielectric (ILD) layer overlying the semiconductor substrate. A sensing well is located within a top surface of the ILD layer. The sensing well has a horizontal sensing surface extending along a top surface of a first one of the plurality of metal interconnect layers and a vertical sensing surface extending along a sidewall of a second one of the plurality of metal interconnect layers overlying the first one of the plurality of metal interconnect layers. The use of both horizontal and vertical sensing surfaces enables more accurate sensing.

Abstract translation: 本公开涉及具有集成的生物传感器的集成芯片，其具有水平和垂直的感测表面。 在一些实施例中，集成芯片具有设置在半导体衬底内的感测装置。 具有电耦合到感测装置的多个金属互连层的线路后端（BEOL）金属化堆叠被布置在覆盖半​​导体衬底的层间电介质（ILD）层内。 感测井位于ILD层的顶表面内。 感测井具有沿着多个金属互连层中的第一个的顶表面延伸的水平感测表面和垂直感测表面，该垂直感测表面沿着多个金属互连层中的第一个上的第一个金属互连层的第二个 多个金属互连层。 使用水平和垂直传感表面可以实现更准确的感测。

公开(公告)号：US09386380B2

公开(公告)日：2016-07-05

申请号：US14524074

申请日：2014-10-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: H04R19/00 ,  H04R19/04 ,  H04R31/00

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R31/006

Abstract: A microelectromechanical systems (MEMS) package includes a MEMS device and an integrated circuit (IC) device connected by a through silicon via (TSV). A conductive MEMS structure is arranged in a dielectric layer and includes a membrane region extending across a first volume arranged in the dielectric layer. A first substrate is bonded to a second substrate through the dielectric layer, where the MEMS device includes the second substrate. The TSV extends through the second substrate to electrically couple the MEMS device to the IC device. A third substrate is bonded to the second substrate to define a second volume between the second substrate and the third substrate, where the IC device includes the first or third substrate. A method for manufacturing the MEMS package is also provided.

Abstract translation: 微机电系统（MEMS）封装包括MEMS器件和通过硅通孔（TSV）连接的集成电路（IC）器件。 导电MEMS结构布置在电介质层中，并且包括跨过设置在电介质层中的第一体积延伸的膜区域。 第一衬底通过介电层结合到第二衬底，其中MEMS器件包括第二衬底。 TSV延伸穿过第二衬底以将MEMS器件电耦合到IC器件。 第三基板被结合到第二基板以在第二基板和第三基板之间限定第二体积，其中IC器件包括第一或第三基板。 还提供了一种制造MEMS封装的方法。

公开(公告)号：US20160137492A1

公开(公告)日：2016-05-19

申请号：US14639492

申请日：2015-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Jung-Huei Peng

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: B81C1/00238 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/035 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L2224/16

Abstract: The present disclosure relates to method of forming a MEMS device that mitigates the above mentioned difficulties. In some embodiments, the present disclosure relates to a method of forming a MEMS device, which forms one or more cavities within a first side of a carrier substrate. The first side of the carrier substrate is then bonded to a dielectric layer disposed on a micro-electromechanical system (MEMS) substrate, and the MEMS substrate is subsequently patterned to define a soft mechanical structure over the one or more cavities. The dielectric layer is then selectively removed, using a dry etching process, to release the one or more soft mechanical structures. A CMOS substrate is bonded to a second side of the MEMS substrate, by way of a bonding structure disposed between the CMOS substrate and the MEMS substrate, using a low-temperature bonding process.

Abstract translation: 本公开涉及形成减轻上述困难的MEMS器件的方法。 在一些实施例中，本公开涉及一种形成MEMS器件的方法，所述MEMS器件在载体衬底的第一侧内形成一个或多个空腔。 然后将载体衬底的第一侧接合到布置在微机电系统（MEMS）衬底上的电介质层，随后将MEMS衬底图案化以限定一个或多个空腔上的软机械结构。 然后使用干蚀刻工艺选择性地去除电介质层以释放一个或多个软机械结构。 通过使用低温接合工艺，通过设置在CMOS衬底和MEMS衬底之间的接合结构将CMOS衬底结合到MEMS衬底的第二侧。

公开(公告)号：US09035451B2

公开(公告)日：2015-05-19

申请号：US14041298

申请日：2013-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Kuei-Sung Chang ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81B3/00 ,  H01L29/84 ,  H01L21/02 ,  B81C1/00

CPC classification number: B81C1/00293 ,  B81B3/0018 ,  B81B3/0059 ,  B81B3/0067 ,  B81B7/0032 ,  B81B7/0041 ,  B81B7/02 ,  B81C1/00158 ,  B81C2203/0145 ,  H01L29/84

Abstract: The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.

Abstract translation: 本公开涉及一种在晶片封装系统上形成具有多个具有不同压力的空腔的多个MEM器件的方法，以及相关联的装置。 在一些实施例中，该方法通过提供具有多个微机电系统（MEM）装置的工件来执行。 帽盖晶片在具有第一压力的第一周围环境中结合到工件上。 接合形成与多个保持在第一压力下的多个MEM装置邻接的多个空腔。 一个或多个开口形成在多个空腔中的一个或多个空腔中，导致可以保持在不同于第一压力的压力水平的气体流动路径。 然后将多个空腔中的一个或多个中的一个或多个开口密封在具有不同压力的不同周围环境中，从而使多个空腔中的一个或多个保持在不同的压力。