公开(公告)号：US20210050316A1

公开(公告)日：2021-02-18

申请号：US17073533

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao Yun Lo ,  Lin-Chih Huang ,  Tasi-Jung Wu ,  Hsin-Yu Chen ,  Yung-Chi Lin ,  Ku-Feng Yang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC: H01L23/00 ,  H01L23/48

Abstract: A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.

公开(公告)号：US10513432B2

公开(公告)日：2019-12-24

申请号：US15904085

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Chun Weng ,  Lavanya Sanagavarapu ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Shyh-Wei Cheng ,  Ji-Hong Chiang ,  Hsin-Yu Chen ,  Hsi-Cheng Hsu

IPC: B81C1/00 ,  H01J37/34 ,  H01L21/02 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

公开(公告)号：US20170107100A1

公开(公告)日：2017-04-20

申请号：US15176365

申请日：2016-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Hsin-Yu Chen ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Wei-Ding Wu

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0041 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/09 ,  B81C1/00293 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/037 ,  B81C2203/038 ,  B81C2203/0735 ,  H01L28/20

Abstract: The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.