公开(公告)号：US11822238B2

公开(公告)日：2023-11-21

申请号：US17121080

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/30 ,  G03F7/36

CPC classification number: G03F7/0042 ,  G03F7/0047 ,  G03F7/32 ,  G03F7/325 ,  G03F7/30 ,  G03F7/36

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20210103220A1

公开(公告)日：2021-04-08

申请号：US17121261

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30 ,  G03F7/004

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US12210286B2

公开(公告)日：2025-01-28

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US20240045327A1

公开(公告)日：2024-02-08

申请号：US18446702

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/325 ,  G03F7/0047 ,  G03F7/32 ,  G03F7/30

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20230375924A1

公开(公告)日：2023-11-23

申请号：US18365302

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

CPC classification number: G03F7/0048 ,  G03F7/0042 ,  G03F7/0047 ,  G03F7/0045

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US20230324806A1

公开(公告)日：2023-10-12

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  H01L21/0274 ,  G03F7/3057 ,  G03F7/38 ,  G03F7/40 ,  G03F7/168 ,  G03F7/162 ,  G03F7/0043 ,  H01L21/0209 ,  H01L21/0206

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US11681226B2

公开(公告)日：2023-06-20

申请号：US17121261

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/168 ,  G03F7/3057 ,  G03F7/38 ,  H01L21/0206 ,  H01L21/0209 ,  H01L21/0274 ,  G03F7/40

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US20210325782A1

公开(公告)日：2021-10-21

申请号：US17364020

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US11137685B2

公开(公告)日：2021-10-05

申请号：US16858846

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  H01L21/67 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40

Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

公开(公告)号：US11054742B2

公开(公告)日：2021-07-06

申请号：US16009795

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.