公开(公告)号：US11781220B2

公开(公告)日：2023-10-10

申请号：US17547521

申请日：2021-12-10

Applicant: Tokyo Electron Limited

Inventor： Anthony Dip

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/45565 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/02164

Abstract: A process and apparatus is provided in which improved control of gas phase radicals is provided. In one embodiment, a system generating atomic oxygen is provided in which gases which generate the atomic oxygen are mixed prior to injection in a process space. The mixing may occur within a showerhead or prior to entrance into the showerhead. In another embodiment, a showerhead is provided which includes multiple zones. Some of the zones of the showerhead may inject the mixture of gases which generate the atomic oxygen into the process space, while other zones do not inject that mixture. In one embodiment, the mixture of gases which generates the atomic oxygen is injected into a main zone, while a subset of those gases is injected into inner and outer zones of the showerhead. The process and apparatus provides a uniform density of atomic oxygen across the substrate being processed.

公开(公告)号：US11417526B2

公开(公告)日：2022-08-16

申请号：US16780248

申请日：2020-02-03

Applicant: Tokyo Electron Limited

Inventor： David L. O'Meara ,  Eric Chih-Fang Liu ,  Jodi Grzeskowiak ,  Anton deVilliers ,  Akiteru Ko ,  Anthony Dip

IPC: H01L21/033

Abstract: A method of forming a device includes depositing a first etch mask layer over a mandrel formed using a lithography process. The method includes depositing a second etch mask layer over the first etch mask layer. The method includes, using a first anisotropic etching process, etching the first etch mask layer and the second etch mask layer to form an etch mask including the first etch mask layer and the second etch mask layer. The method includes removing the mandrel to expose an underlying surface of the layer to be patterned. The method includes, using the etch mask, forming a feature by performing a second anisotropic etching process to pattern the layer to be patterned, where during the first anisotropic etching process, the first etch mask layer etches at a first rate and the second etch mask layer etches at a second rate, and where the first rate is different from the second rate.

公开(公告)号：US20210156029A1

公开(公告)日：2021-05-27

申请号：US16697516

申请日：2019-11-27

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Anthony Dip

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: Embodiments are described for internally cooled multi-hole injectors to deliver process chemicals. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.