公开(公告)号：US20250092521A1

公开(公告)日：2025-03-20

申请号：US18962380

申请日：2024-11-27

Applicant: Tokyo Electron Limited

Inventor： Anthony Dip

IPC: C23C16/455 ,  B05B1/18 ,  C23C16/24 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/66

Abstract: In one example, an apparatus includes a processing chamber; a substrate holder disposed in the processing chamber; and a showerhead disposed over the substrate holder. The showerhead includes a first zone disposed in a central region of the showerhead, the first zone including a first cavity, a plurality of first fluid exit holes aligned to output a fluid from the first cavity towards the substrate holder, a first flow path fluidly coupled to a fluid source, and a plurality of first fluid distribution pathways fluidly coupling the first flow path with the first cavity.

公开(公告)号：US11469147B2

公开(公告)日：2022-10-11

申请号：US16984618

申请日：2020-08-04

Applicant: Tokyo Electron Limited

Inventor： Anthony Dip

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/50 ,  C23C16/30 ,  C23C16/458 ,  C23C16/455

Abstract: A method for depositing a dielectric material includes heating a substrate disposed in a dielectric deposition chamber; dispensing a dielectric precursor from a first showerhead towards a major outer surface of the substrate; dispensing a mixture containing oxygen and ammonia from a second showerhead towards the major outer surface of the substrate; and reacting the dielectric precursor with the mixture to deposit a layer of oxynitride dielectric material on the substrate.

公开(公告)号：US20210404064A1

公开(公告)日：2021-12-30

申请号：US17316316

申请日：2021-05-10

Applicant: Tokyo Electron Limited

Inventor： Anthony Dip

IPC: C23C16/455 ,  B05B1/18 ,  H01L21/66 ,  H01L21/02 ,  C23C16/458 ,  C23C16/24 ,  C23C16/52

Abstract: In one example, an apparatus includes a processing chamber; a substrate holder disposed in the processing chamber; and a showerhead disposed over the substrate holder. The showerhead includes a first zone disposed in a central region of the showerhead, the first zone including a first cavity, a plurality of first fluid exit holes aligned to output a fluid from the first cavity towards the substrate holder, a first flow path fluidly coupled to a fluid source, and a plurality of first fluid distribution pathways fluidly coupling the first flow path with the first cavity.

公开(公告)号：US20210355580A1

公开(公告)日：2021-11-18

申请号：US15930737

申请日：2020-05-13

Applicant: Tokyo Electron Limited

Inventor： Anthony Dip

IPC: C23C16/455

Abstract: A layer is deposited on a substrate using atomic oxygen in an atomic layer deposition (ALD) process. The gases used to generate atomic oxygen are mixed and heated within a gas activation chamber. In one embodiment, the gas activation chamber is positioned beneath a showerhead of a spatial ALD system for receiving one or more gases injected from the showerhead. The gases are mixed within the gas activation chamber and passed over a hot surface to produce reaction byproducts, including atomic oxygen. The hot surface heats the gas mixture to a high temperature (e.g., above 550 C) sufficient to produce meaningful concentrations of atomic oxygen. The gas activation chamber then transports the heated gas mixture containing the atomic oxygen to the substrate surface at an elevated temperature to minimize recombination of the atomic oxygen, the high temperature of the gas activation chamber being higher than the temperature of the substrate.

公开(公告)号：US20210242020A1

公开(公告)日：2021-08-05

申请号：US16780248

申请日：2020-02-03

Applicant: Tokyo Electron Limited

Inventor： David L. O'Meara ,  Eric Chih-Fang Liu ,  Jodi Grzeskowiak ,  Anton deVilliers ,  Akiteru Ko ,  Anthony Dip

IPC: H01L21/033

Abstract: A method of forming a device includes depositing a first etch mask layer over a mandrel formed using a lithography process. The method includes depositing a second etch mask layer over the first etch mask layer. The method includes, using a first anisotropic etching process, etching the first etch mask layer and the second etch mask layer to form an etch mask including the first etch mask layer and the second etch mask layer. The method includes removing the mandrel to expose an underlying surface of the layer to be patterned. The method includes, using the etch mask, forming a feature by performing a second anisotropic etching process to pattern the layer to be patterned, where during the first anisotropic etching process, the first etch mask layer etches at a first rate and the second etch mask layer etches at a second rate, and where the first rate is different from the second rate.

公开(公告)号：US20130251904A1

公开(公告)日：2013-09-26

申请号：US13897558

申请日：2013-05-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Manabu Honma ,  Anthony Dip

IPC: C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

Abstract: A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract translation: 公开的薄膜沉积设备包括：转盘，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20240047218A1

公开(公告)日：2024-02-08

申请号：US18380776

申请日：2023-10-17

Applicant: Tokyo Electron Limited

Inventor： David O'Meara ,  Anthony Dip ,  Masanobu Igeta

IPC: H01L21/3105 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/31055 ,  C23C16/4584 ,  C23C16/45553

Abstract: Atomic layer processing systems are provided for planarizing a patterned substrate utilizing a rotating platen. An atomic layer processing system may include a spatial atomic layer processing chamber with the rotating platen, a sensor that provides sensor data related to a property of the patterned substrate and/or a reaction in the spatial atomic layer processing chamber, and a controller. The controller may be coupled to the sensor to receive the sensor data and utilize such data to adjust at least one operating parameter of the atomic layer processing system so as to achieve a desired amount of planarization of the patterned substrate.

公开(公告)号：US11823910B2

公开(公告)日：2023-11-21

申请号：US16944563

申请日：2020-07-31

Applicant: Tokyo Electron Limited

Inventor： David O'Meara ,  Anthony Dip ,  Masanobu Igeta

IPC: H01L21/3105 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/31055 ,  C23C16/4584 ,  C23C16/45553

Abstract: Methods are provided for planarizing a patterned substrate in a spatial atomic layer processing system comprising a rotating platen. The patterned substrate may generally include features having higher regions and lower regions. To planarize the patterned substrate, or reduce a height differential between the higher and lower regions, a selective atomic layer etching (ALE) process is disclosed to preferentially form a modified layer on the higher regions of the features by exposing a surface of the patterned substrate to a precursor gas while the rotating platen spins at a high rotational speed. By preferentially forming the modified layer on the higher regions of the features, and subsequently removing the modified layer, the selective ALE process described herein preferentially etches the higher regions of the features to lessen the height differential between the higher and lower regions until a desired planarization of the features is achieved.

公开(公告)号：US20220178024A1

公开(公告)日：2022-06-09

申请号：US17114096

申请日：2020-12-07

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Anthony Dip

IPC: C23C16/455 ,  C23C16/46 ,  F27D1/16 ,  F27D1/00 ,  C23C16/40 ,  C23C16/34

Abstract: An exemplary apparatus includes a metal furnace tube having an open first end and an opposite second end. The metal furnace tube includes an inner chamber, a fluid inlet to intake a fluid into the inner chamber, and a fluid outlet to exhaust the fluid from the inner chamber, the inner chamber to support a plurality of substrates within the metal furnace tube. The apparatus includes a first base plate or flange back plate coupling the fluid inlet to the inner chamber; a second base plate or flange back plate coupling the fluid outlet to the inner chamber; and a furnace includes a heater to heat the metal furnace tube, the metal furnace tube being mounted within the furnace and the heater being disposed outside the metal furnace tube.

公开(公告)号：US11225716B2

公开(公告)日：2022-01-18

申请号：US16697516

申请日：2019-11-27

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Anthony Dip

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.