公开(公告)号：US09106851B2

公开(公告)日：2015-08-11

申请号：US13797862

申请日：2013-03-12

Applicant: Tower Semiconductor Ltd.

Inventor： Amos Fenigstein ,  Raz Reshef ,  Shay Alfassi ,  Guy Yehudian

IPC: H04N5/378 ,  H04N5/355 ,  H04N5/3745

CPC classification number: H04N5/355 ,  H04N5/3559 ,  H04N5/3745

Abstract: A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having two different charge-to-voltage conversion capacitors that read a single photodiode charge during a two-phase readout operation. The first capacitor has a lower capacitance and therefore higher conversion gain (sensitivity), and the second capacitor has a higher capacitance and therefore lower conversion gain (sensitivity). The two-phase readout operation samples the photodiode charge twice, once using the high sensitivity capacitor and once using the low sensitivity capacitor. The high sensitivity readout phase provides detailed low light condition data but is saturated under brighter light conditions, and the low sensitivity readout phase provides weak data under low light conditions but provides high quality image data under brighter light conditions. The final HDR image is created by combining both high and low sensitivity images into a single image while giving each of them the correct weighted value.

Abstract translation: 单曝光高动态范围（HDR）图像传感器利用具有两个不同的电荷 - 电压转换电容器的电荷放大器，其在两相读出操作期间读取单个光电二极管电荷。 第一个电容器具有较低的电容，因此具有较高的转换增益（灵敏度），第二个电容器具有较高的电容，因此具有较低的转换增益（灵敏度）。 两相读出操作对光电二极管进行充电两次，一次使用高灵敏度电容器，一次使用低灵敏度电容。 高灵敏度读出阶段提供详细的低光条件数据，但在较亮的光线条件下饱和，低灵敏度读出相位在弱光条件下提供弱数据，但在较亮的光线条件下提供高质量的图像数据。 最终的HDR图像是通过将高灵敏度图像和低灵敏度图像组合成单个图像而创建的，同时给每个图像提供正确的加权值。

公开(公告)号：US10757355B2

公开(公告)日：2020-08-25

申请号：US16048435

申请日：2018-07-30

Applicant: Tower Semiconductor LTD.

Inventor： Amos Fenigstein ,  Tomer Leitner

IPC: H04N5/374 ,  H04N5/378

Abstract: A system that may include (a) a radiation source that is constructed and arranged to illuminate an object with radiation during consecutive time frames of microsecond-scale duration, wherein radiation emitted during one time frame differs by energy from radiation transmitted during an adjacent time frame; and (b) a CMOS sensor that may include a readout circuit and CMOS pixels. Each CMOS pixel may include a radiation sensing element and in-pixel memory elements. Different in-pixel memory elements are constructed and arranged to sample a state of the radiation sensing element during different time frames of the consecutive time frames.

公开(公告)号：US10210526B2

公开(公告)日：2019-02-19

申请号：US14690425

申请日：2015-04-19

Applicant: Tower Semiconductor LTD. ,  HillBerry GAT LTD.

Inventor： Yakov Roizin ,  Viktor Goldovsky ,  Avi Strum ,  Yohanan Davidovich ,  Amos Fenigstein ,  Assaf Lahav ,  David Avner

IPC: G06K7/10 ,  G06Q30/00 ,  H01L27/146

Abstract: An image sensor module that comprises a die, wherein the die comprises light sensors and optics; and wherein the optics comprises luminescent elements that represent die manufacturing information that is indicative of a manufacturing process of the die.

公开(公告)号：US20180097510A1

公开(公告)日：2018-04-05

申请号：US15282397

申请日：2016-09-30

Applicant: Tower Semiconductor Ltd.

Inventor： Amos Fenigstein

IPC: H03K3/3565 ,  H03K3/012 ,  H04N5/355 ,  H04N5/3745

CPC classification number: H03K3/3565 ,  H03K3/012 ,  H04N5/355 ,  H04N5/3745

Abstract: A Schmitt trigger's hysteresis is established by standard and non-standard MOSFETs having different (lower/higher) threshold voltages. For example, a standard n-channel transistor having a relatively low threshold voltage (e.g., 1V) sets the lower trigger switching voltage, and a non-standard n-channel transistor (e.g., an n-channel source/drain and a polysilicon gate doped with a p-type dopant) exhibits a relatively high threshold voltage (e.g., 2V) that sets the higher trigger switching voltage. An output control circuit generates the Schmitt trigger's digital output signal based on the on/off states of the two (non-standard and standard) MOSFETs, whereby the changes digital output signal between two values when the analog input signal falls below the lower threshold voltage (i.e., when both MOSFETs are turned on/off) and rises above the higher threshold voltage (i.e., when both MOSFETs are turned off/on). Self-resetting and other circuits utilize the Schmitt trigger to facilitate, e.g., high dynamic range image sensor pixels.

公开(公告)号：US09865632B2

公开(公告)日：2018-01-09

申请号：US15658328

申请日：2017-07-24

Applicant: Tower Semiconductor Ltd.

Inventor： Assaf Lahav ,  Amos Fenigstein ,  Yakov Roizin ,  Avi Strum

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/353 ,  H04N5/3745

CPC classification number: H01L27/1461 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/3765

Abstract: A global shutter image sensor formed on an n-type bulk substrate and including pixels having pinned n-type photodiodes and memory nodes formed in designated n-doped epitaxial layer regions that are separated from the bulk substrate by a p-type vertical (potential) barrier implant. Each memory node includes both a buried channel portion and a contiguous pinned diode portion having different doping levels such that an intrinsic lateral electrical field drives electrons from the buried channel portion into the pinned diode portion during global charge transfer from an adjacent photodiode. The p-type vertical (potential) barrier implant is coupled to ground, and the bulk substrate is switched between a low integration voltage level during integration periods, and a high reset voltage level, whereby the photodiodes are globally reset without requiring reset transistors. P-type sinker implant sections and p-type vertical barrier implants form box-like diffusions around each pixel's photodiode and memory node.

公开(公告)号：US09729810B2

公开(公告)日：2017-08-08

申请号：US14665803

申请日：2015-03-23

Applicant: Tower Semiconductor Ltd.

Inventor： Assaf Lahav ,  Amos Fenigstein ,  Yakov Roizin ,  Avi Strum

IPC: H04N5/335 ,  H04N5/3745 ,  H04N5/376 ,  H01L27/146

CPC classification number: H04N5/37452 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/3765

Abstract: A global shutter (GS) image sensor pixel includes a pinned photodiode connected to a memory node by a first transfer gate transistor, and a floating diffusion connected to the memory node by a second transfer gate transistor. The memory node includes a buried channel portion disposed under the first transfer gate transistor and a contiguous pinned diode portion disposed between the first and second transfer gate transistors, where the two memory node portions have different doping levels such that an intrinsic lateral electrical field drives electrons from the buried channel portion into the pinned diode portion. The floating diffusion node similarly includes a buried channel portion disposed under the second transfer gate transistor and a contiguous pinned diode portion that generate a second intrinsic lateral electrical field that drives electrons into the pinned diode portion of the floating diffusion. A 6T CMOS pixel is disclosed that facilitates low-noise CDS readout.

公开(公告)号：US09431455B2

公开(公告)日：2016-08-30

申请号：US14536649

申请日：2014-11-09

Applicant: Tower Semiconductor Ltd.

Inventor： Amos Fenigstein ,  Yakov Roizin ,  Avi Strum

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14698

Abstract: A method for fabricating image sensors and other semiconductor ICs that controls the amount of hydrogen generated during back-end processing. The back-end processing includes forming multiple metallization layers after front-end processing is completed (i.e., after forming the pre-metal dielectric), where each metallization layer includes a patterned aluminum structure, an interlevel dielectric (ILD) layer including TEOS-based oxide formed over the patterned aluminum structure. A cap layer including a low-moisture content oxide such as silane oxide (i.e., SiO2 generated by way of a silane CVD process) is formed over at least one ILD layer. The cap layer serves as an etch-stop for the subsequently-formed metal layer of a next metallization layer by isolating the underlying ILD material from the plasma environment during aluminum over-etch, which significantly reduces the production and migration of hydrogen into front-end structures.

Abstract translation: 一种制造图像传感器和其他半导体IC的方法，其控制在后端处理期间产生的氢气量。 后端处理包括在前端处理完成之后形成多个金属化层（即，在形成预金属电介质之后），其中每个金属化层包括图案化的铝结构，层间电介质（ILD）层，包括基于TEOS的 形成在图案化铝结构上的氧化物。 在至少一个ILD层上形成包含诸如硅烷氧化物（即通过硅烷CVD工艺生成的SiO 2）的低含水量氧化物的盖层。 在铝过蚀刻期间，通过将下面的ILD材料与等离子体环境隔离，盖层用作随后形成的下一个金属化层的金属层的蚀刻停止层，这显着地减少了氢的生成和迁移到前端 结构。

公开(公告)号：US20150350584A1

公开(公告)日：2015-12-03

申请号：US14822666

申请日：2015-08-10

Applicant: Tower Semiconductor Ltd.

Inventor： Amos Fenigstein ,  Raz Reshef ,  Shay Alfassi ,  Guy Yehudian

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/3742 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/378

Abstract: A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having a selectively coupled conversion capacitor to read a single photodiode charge during a multi-phase readout operation. An overflow readout is performed during the photodiode charge integration phase, and utilizes the conversion capacitor to read overflow signals indicating rapidly rising photodiode charges caused by extreme exposure conditions, which also prevents saturation of the photodiode. At the end of the integration phase, the remaining photodiode charge is then measured using two readouts: a high sensitivity readout during which the storage capacitor de-coupled to accurately measure low-light conditions, and a low sensitivity readout during which the remaining photodiode charge is stored on the storage capacitor to provide normal light image data. Final single exposure HDR image data is then calculated by summing the overflow image data with the high-sensitivity and/or the low-sensitivity image data.

Abstract translation: 单曝光高动态范围（HDR）图像传感器利用具有选择性耦合的转换电容器的电荷放大器，以在多相读出操作期间读取单个光电二极管电荷。 在光电二极管电荷积分阶段期间执行溢出读出，并利用转换电容器读取表示由极端曝光条件引起的快速上升的光电二极管电荷的溢出信号，这也防止了光电二极管的饱和。 在积分阶段结束时，然后使用两个读数测量剩余的光电二极管电荷：高灵敏度读数，其中存储电容器去耦合以精确测量低光条件，以及低灵敏度读数，其中剩余的光电二极管电荷 存储在存储电容器上以提供正常的光图像数据。 然后通过将溢出图像数据与高灵敏度和/或低灵敏度图像数据相加来计算最终单次曝光HDR图像数据。

公开(公告)号：US20140263950A1

公开(公告)日：2014-09-18

申请号：US13797862

申请日：2013-03-12

Applicant: TOWER SEMICONDUCTOR LTD.

Inventor： Amos Fenigstein ,  Raz Reshef ,  Shay Alfassi ,  Guy Yehudian

IPC: H04N5/378

CPC classification number: H04N5/355 ,  H04N5/3559 ,  H04N5/3745

Abstract: A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having two different charge-to-voltage conversion capacitors that read a single photodiode charge during a two-phase readout operation. The first capacitor has a lower capacitance and therefore higher conversion gain (sensitivity), and the second capacitor has a higher capacitance and therefore lower conversion gain (sensitivity). The two-phase readout operation samples the photodiode charge twice, once using the high sensitivity capacitor and once using the low sensitivity capacitor. The high sensitivity readout phase provides detailed low light condition data but is saturated under brighter light conditions, and the low sensitivity readout phase provides weak data under low light conditions but provides high quality image data under brighter light conditions. The final HDR image is created by combining both high and low sensitivity images into a single image while giving each of them the correct weighted value.

Abstract translation: 单曝光高动态范围（HDR）图像传感器利用具有两个不同的电荷 - 电压转换电容器的电荷放大器，其在两相读出操作期间读取单个光电二极管电荷。 第一个电容器具有较低的电容，因此具有较高的转换增益（灵敏度），第二个电容器具有较高的电容，因此具有较低的转换增益（灵敏度）。 两相读出操作对光电二极管进行充电两次，一次使用高灵敏度电容器，一次使用低灵敏度电容。 高灵敏度读出阶段提供详细的低光条件数据，但在较亮的光线条件下饱和，低灵敏度读出相位在弱光条件下提供弱数据，但在较亮的光线条件下提供高质量的图像数据。 最终的HDR图像是通过将高灵敏度图像和低灵敏度图像组合成单个图像而创建的，同时给每个图像提供正确的加权值。

公开(公告)号：US20140226047A1

公开(公告)日：2014-08-14

申请号：US13764776

申请日：2013-02-11

Applicant: TOWER SEMICONDUCTOR LTD.

Inventor： Assaf Lahav ,  Amos Fenigstein

IPC: H04N5/335

CPC classification number: H04N5/3575 ,  H04N5/3532 ,  H04N5/37452 ,  H04N5/37457

Abstract: A method for operating a global shutter image sensor includes performing both a global shutter (image capture) operation and a rolling shutter (readout) operation. During the global shutter operation, image information (charges) are captured by photodiodes in every pixel, and then simultaneously transferred to charge coupled gate (CCG) devices provided in each pixel. The rolling shutter operation includes performing multiple correlated double sampling (CDS) readout phases utilizing readout circuits that are shared by groups of pixels (e.g., four pixels share each readout circuit) having CCG devices connected in a chain. After resetting a floating diffusion in the readout circuit, a first captured charge is transferred to floating diffusion for readout, and the remaining charges are shifted along the CCG chain. The remaining CCG devices are then sequentially read out by repeating the read-and-shift operation. The readout operation is then repeated for each row of pixel groups.

Abstract translation: 用于操作全局快门图像传感器的方法包括执行全局快门（图像拍摄）操作和滚动快门（读出）操作。 在全局快门操作期间，每个像素中的光电二极管拍摄图像信息（电荷），然后同时传送到每个像素中提供的电荷耦合栅极（CCG）装置。 滚动快门操作包括利用由链中连接的CCG设备的像素组（例如，四个像素共享每个读出电路）共享的读出电路来执行多个相关双采样（CDS）读出阶段。 在读出电路中重置浮动扩散之后，将第一捕获电荷转移到浮动扩散用于读出，并且剩余电荷沿着CCG链移动。 然后通过重复读取和移位操作来顺序读出剩余的CCG设备。 然后对每行像素组重复读出操作。