公开(公告)号：US20200235272A1

公开(公告)日：2020-07-23

申请号：US16842716

申请日：2020-04-07

Applicant: Unimicron Technology Corp.

Inventor： Pei-Wei WANG ,  Cheng-Ta KO ,  Yu-Hua CHEN ,  De-Shiang LIU ,  Tzyy-Jang TSENG

IPC: H01L33/62

Abstract: A manufacturing method of a light emitting device package structure is provided. The method includes following operations: (i) providing a circuit redistribution structure; (ii) providing a first substrate; (iii) forming a circuit layer structure over the first substrate, wherein the circuit layer structure includes a first circuit layer; (iv) before or after operation (iii), placing a light emitting device between the first substrate and the circuit layer structure or over the circuit layer structure, wherein the light emitting device is electrically connected with the first circuit layer; and (v) placing the circuit redistribution structure over the light emitting device, wherein the circuit redistribution structure includes a first redistribution layer, a second redistribution layer, and a chip, and the first redistribution layer includes a second circuit layer and a conductive contact that contacts the second circuit layer.

公开(公告)号：US20200068721A1

公开(公告)日：2020-02-27

申请号：US16672512

申请日：2019-11-03

Applicant: Unimicron Technology Corp.

Inventor： Kai-Ming YANG ,  Chen-Hao LIN ,  Wang-Hsiang TSAI ,  Cheng-Ta KO

IPC: H05K3/40 ,  H05K1/18 ,  H05K1/11 ,  H05K1/14 ,  H01L23/14 ,  H01L23/15 ,  H01L23/498 ,  H01L21/48 ,  H01L21/768

Abstract: A package structure, includes a metal layer, an insulating composite layer disposed thereon, a sealant bonded on the insulating composite layer, a chip embedded in the sealant, a circuit layer structure disposed on the sealant and the chip, and a protecting layer. The chip has a plurality of electrode pads exposed from the sealant. The circuit layer structure includes at least one dielectric layer and at least one circuit layer. The dielectric layer has a plurality of conductive blind vias. The dielectric layer and the sealant are made of the same material. The circuit layer is disposed on the dielectric layer and extends into the conductive blind vias, and the bottommost circuit layer is electrically connected to the electrode pads through the conductive blind vias. The protecting layer is formed on the circuit layer structure and has a plurality of openings exposing a portion of the circuit layer structure.

公开(公告)号：US20200006610A1

公开(公告)日：2020-01-02

申请号：US16140563

申请日：2018-09-25

Applicant: Unimicron Technology Corp.

Inventor： Pei-Wei WANG ,  Cheng-Ta KO ,  Yu-Hua CHEN ,  De-Shiang LIU ,  Tzyy-Jang TSENG

IPC: H01L33/62

Abstract: A light emitting device package structure includes a substrate, a circuit layer structure, a light emitting device, a first redistribution layer, a conductive connector, a second redistribution layer, and a chip. The circuit layer structure is disposed over the substrate, and the circuit layer structure includes a first circuit layer. The light emitting device is disposed over the circuit layer structure and is electrically connected with the first circuit layer. The first redistribution layer is disposed over the light emitting device and includes a second circuit layer and a conductive contact contacting the second circuit layer. The conductive connector connects the first circuit layer and the second circuit layer. The second redistribution layer is disposed over the first redistribution layer and includes a third circuit layer contacting the conductive contact. The chip is disposed over the second redistribution layer and is electrically connected with the third circuit layer.

公开(公告)号：US20180122733A1

公开(公告)日：2018-05-03

申请号：US15853926

申请日：2017-12-25

Applicant: Unimicron Technology Corp.

Inventor： Yu-Hua CHEN ,  Cheng-Ta KO

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/562 ,  H05K3/4682 ,  H05K3/4688 ,  H05K2201/096 ,  H05K2201/10378

Abstract: A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.