公开(公告)号：US07306955B2

公开(公告)日：2007-12-11

申请号：US11277350

申请日：2006-03-23

Applicant: Chen-Hsiung Yang

Inventor： Chen-Hsiung Yang

IPC: H01L21/00

CPC classification number: H01L21/2007 ,  B81B2203/0127 ,  B81C1/00603 ,  B81C2201/019

Abstract: A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.

Abstract translation: 提供了一种执行双面处理的方法。 首先，提供具有布置在前表面上的结构图案的晶片。 接着，在结构图案上限定多个前划线，并将填充层填充到前划线中。 接着，用结合层将结构图形结合到载体晶片上，并且在晶片的背面上形成多个后划痕线。 最后，去除填充在前划痕线中的填充层。

公开(公告)号：US07258806B1

公开(公告)日：2007-08-21

申请号：US11426017

申请日：2006-06-23

Applicant: Hsien-Lung Ho

Inventor： Hsien-Lung Ho

IPC: C23F1/00 ,  H01L21/00

CPC classification number: H04R19/04

Abstract: A method of fabricating a diaphragm of a capacitive microphone device. First, a substrate is provided, and a dielectric layer on a first surface of the substrate is formed. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and a diaphragm layer is formed on a surface of the silicon spacers and the surface of the dielectric layer. Subsequently, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the diaphragm layer disposed on the surface of the dielectric layer. Thereafter, the dielectric layer exposed through the openings is removed, and planarization layer is removed.

Abstract translation: 一种制造电容式麦克风装置的隔膜的方法。 首先，提供基板，并且形成在基板的第一表面上的电介质层。 在电介质层的表面上形成多个硅隔离物，并且在硅间隔物的表面和电介质层的表面上形成隔膜层。 随后，在隔膜层上形成平坦化层，并且蚀刻基板的第二表面以形成与设置在电介质层表面上的隔膜层相对应的多个开口。 此后，除去通过开口露出的电介质层，去除平坦化层。

公开(公告)号：US07008821B1

公开(公告)日：2006-03-07

申请号：US10904621

申请日：2004-11-19

Applicant: Shih-Feng Shao ,  Chen-Hsiung Yang ,  Hsin-Ya Peng

Inventor： Shih-Feng Shao ,  Chen-Hsiung Yang ,  Hsin-Ya Peng

IPC: H01L21/48

CPC classification number: H01L24/05 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.

Abstract translation: 形成晶片背面互连线的方法包括在背面形成掩模层，掩模层至少包括与焊盘对应的开口，从后表面进行第一蚀刻工艺以除去未被掩模保护的晶片 以形成凹部，去除掩模层，以及在背面上形成互连丝。

公开(公告)号：US07585417B2

公开(公告)日：2009-09-08

申请号：US11426018

申请日：2006-06-23

Applicant: Hsien-Lung Ho

Inventor： Hsien-Lung Ho

IPC: C23F1/00

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R31/003

Abstract: A method of fabricating a diaphragm of a capacitive microphone device is provided. First, a substrate is provided, and a dielectric layer is formed on a first surface of the substrate. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and the dielectric layer is patterned to form a plurality of dielectric bumps. Subsequently, a diaphragm layer is formed on a surface of the silicon spacers, a surface of the dielectric bumps, and the first surface of the substrate so that the diaphragm layer has a corrugate structure by virtue of the dielectric bumps. Thereafter, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the corrugate structure. Following that, the dielectric bumps exposed through the openings are removed, and the planarization layer is removed.

Abstract translation: 提供一种制造电容式麦克风装置的隔膜的方法。 首先，提供基板，并且在基板的第一表面上形成电介质层。 在电介质层的表面上形成多个硅间隔物，并对电介质层进行图案化以形成多个介电凸块。 随后，在硅间隔物的表面，介电凸块的表面和基板的第一表面上形成隔膜层，使得隔膜层由于介电凸块而具有波纹结构。 此后，在隔膜层上形成平坦化层，蚀刻基板的第二表面以形成与波纹结构相对应的多个开口。 然后，除去通过开口暴露的介电凸块，除去平坦化层。

公开(公告)号：US07533564B2

公开(公告)日：2009-05-19

申请号：US11381129

申请日：2006-05-02

Applicant: Chin-Chang Pan ,  Yu-Fu Kang

Inventor： Chin-Chang Pan ,  Yu-Fu Kang

IPC: G01F1/68

CPC classification number: B01L7/52 ,  B01L3/50857 ,  B01L2300/06 ,  B01L2300/0829 ,  B01L2300/0858 ,  B01L2300/1827

Abstract: A micro sample heating apparatus has a substrate, a micro heating device disposed on a first surface of the substrate, a cavity having a vertical sidewall and corresponding to the micro heating device positioned in a second surface of the substrate, and an isolation structure positioned on the second surface of the substrate. The isolation structure has an opening corresponding to the cavity, and the cavity and the opening form a sample room.

Abstract translation: 微型样品加热装置具有基板，设置在基板的第一表面上的微加热装置，具有垂直侧壁并对应于位于基板的第二表面中的微加热装置的空腔，以及位于基板的第二表面上的隔离结构 衬底的第二表面。 隔离结构具有对应于空腔的开口，并且空腔和开口形成样品室。

公开(公告)号：US07510947B2

公开(公告)日：2009-03-31

申请号：US11428409

申请日：2006-07-03

Applicant: Shih-Feng Shao ,  Ming-Yen Chiu

Inventor： Shih-Feng Shao ,  Ming-Yen Chiu

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L23/10 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L21/50 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2924/16195 ,  H01L2924/16235

Abstract: A cap wafer with patterned film formed thereon is etched through areas not covered by the patterned film to form a plurality of openings. Then, the cap wafer is bonded to a transparent wafer, and the cap wafer around the pattern film is segmented to form a plurality of cap structures. A device wafer with a plurality of devices and a plurality of contact pads electrically connected to the devices is subsequently provided. The cap structures and the device wafer are hermetically sealed to form a plurality of hermetic windows on the devices.

Abstract translation: 在其上形成有图案化膜的盖晶片通过未被图案化膜覆盖的区域蚀刻以形成多个开口。 然后，将盖晶片接合到透明晶片，并且围绕图案膜的盖晶片被分割以形成多个帽结构。 随后提供具有多个器件的器件晶片和与器件电连接的多个接触焊盘。 盖结构和器件晶片被气密地密封以在器件上形成多个密封窗。

公开(公告)号：US07470565B2

公开(公告)日：2008-12-30

申请号：US11426945

申请日：2006-06-28

Applicant: Shun-Ta Wang

Inventor： Shun-Ta Wang

IPC: H01L21/00

CPC classification number: B81C1/00269 ,  B81C2203/0118 ,  H01L21/78 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A packaging wafer has a plurality of cavities and a plurality of trenches on a front surface thereof. The packaging wafer is bonded to the element wafer, and a first cutting method is performed. Afterward a piece of tape is provided and is attached to the packaging wafer. Moreover, a second cutting process is performed and then the piece of tape is removed. Therefore, a wafer level package is formed. In addition, the wafer level package is divided into a plurality of individual packages.

Abstract translation: 封装晶片在其前表面上具有多个空腔和多个沟槽。 将封装晶片接合到元件晶片，并且执行第一切割方法。 之后提供一条胶带并附着在包装薄片上。 此外，执行第二切割处理，然后去除该条带。 因此，形成晶片级封装。 此外，晶片级封装被分成多个单独封装。

公开(公告)号：US07456043B2

公开(公告)日：2008-11-25

申请号：US11308283

申请日：2006-03-15

Applicant: Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/00 ,  H01L21/76

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  H04R19/04 ,  H04R31/00

Abstract: A substrate is provided and a plurality of trenches are formed in the front surface of the substrate. Then, a thermal oxide layer is formed on inner walls of the trenches and the front surface of the substrate. Subsequently, a first structural layer is formed on the thermal oxide layer, dopants are implanted into the first structural layer, a second structural layer is formed on the first structural layer, and an annealing process is performed to reduce the stress of the first and second structural layers. Following that, the first and second structural layers are patterned to form diaphragms. Finally, the second structural layer is mounted on a support wafer with a bonding layer, and the back surface of the substrate is etched by deep etching techniques to form back chambers corresponding to the diaphragms. Each back chamber has a vertical sidewall and partially exposes the first structural layer.

Abstract translation: 提供衬底，并且在衬底的前表面中形成多个沟槽。 然后，在沟槽的内壁和基板的前表面上形成热氧化层。 随后，在热氧化物层上形成第一结构层，将掺杂剂注入到第一结构层中，在第一结构层上形成第二结构层，并进行退火处理以减小第一和第二结构层的应力 结构层。 之后，第一和第二结构层被图案化以形成隔膜。 最后，将第二结构层安装在具有接合层的支撑晶片上，并通过深蚀刻技术蚀刻衬底的后表面以形成与隔膜对应的后室。 每个后室具有垂直侧壁并部分地暴露第一结构层。

公开(公告)号：US07410821B2

公开(公告)日：2008-08-12

申请号：US11277150

申请日：2006-03-22

Applicant: Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/00

CPC classification number: B81C1/00928

Abstract: A substrate having a sacrificial layer and a structural layer disposed on the front surface of the substrate is provided. Thereon an opening is formed on the back surface of the substrate and the sacrificial layer is exposed partially. A wet etching process is performed to etch the sacrificial layer via the opening to form a suspended structure. Finally, a gas injection process is performed. The gas injection process comprises blowing a gas on the suspended structure via the opening and consequently preventing the suspended structure from sticking to the substrate.

Abstract translation: 提供具有设置在基板的前表面上的牺牲层和结构层的基板。 在该基板的背面形成有开口，部分露出牺牲层。 执行湿蚀刻工艺以经由开口蚀刻牺牲层以形成悬挂结构。 最后，进行气体注入处理。 气体注入方法包括通过开口吹入悬浮结构上的气体，从而防止悬浮结构粘附到基底上。

公开(公告)号：US07395706B2

公开(公告)日：2008-07-08

申请号：US11426015

申请日：2006-06-23

Applicant: Chin-Chang Pan ,  Yu-Fu Kang

Inventor： Chin-Chang Pan ,  Yu-Fu Kang

IPC: G01F1/68

CPC classification number: G01N25/00

Abstract: A micro sample heating apparatus has a substrate, a micro heating device disposed on a first surface of the substrate, a cavity having an inclined sidewall and corresponding to the micro heating device positioned in a second surface of the substrate, and an isolation structure positioned on the second surface of the substrate. The isolation structure has an opening corresponding to the cavity, and the cavity and the opening form a sample room.

Abstract translation: 微型样品加热装置具有基板，设置在基板的第一表面上的微加热装置，具有倾斜侧壁并对应于位于基板的第二表面中的微加热装置的空腔，以及位于基板上的隔离结构 衬底的第二表面。 隔离结构具有对应于空腔的开口，并且空腔和开口形成样品室。