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21.发明申请公开(公告)号：US20150160483A1
公开(公告)日：2015-06-11
申请号：US14588603
申请日：2015-01-02
Applicant: David THOMSON , Frederic GARDES , Graham REED
Inventor： David THOMSON , Frederic GARDES , Graham REED
CPC classification number: G02F1/025 , G02B6/134 , G02B6/1347 , G02B6/136 , G02B2006/12173 , G02F2001/0152 , G02F2201/063
Abstract: An electro-optic device, comprising an insulating layer and a layer light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.
Abstract translation: 一种电光器件，包括绝缘层和邻近绝缘层的层轻载体材料。 载光材料层，例如硅，包括第一类型的第一掺杂区域和与第一掺杂区域邻接以形成pn结的第二不同类型的第二掺杂区域。 所述第一掺杂区在所述结处具有第一厚度，并且所述第二掺杂区在所述结处具有第二厚度，所述第一厚度大于所述第二厚度，在所述第一掺杂区中限定用于传播光信号的波导肋。 由于结的位置与波导肋的侧壁重合，所以可以使用自对准的工艺来简化制造工艺并提高产量。
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22.发明授权公开(公告)号：US08958678B2
公开(公告)日：2015-02-17
申请号：US13574576
申请日：2011-01-20
Applicant: David Thomson , Frederic Gardes , Graham Reed
Inventor： David Thomson , Frederic Gardes , Graham Reed
CPC classification number: G02F1/025 , G02B6/134 , G02B6/1347 , G02B6/136 , G02B2006/12173 , G02F2001/0152 , G02F2201/063
Abstract: An electro-optic device, comprising an insulating layer and a layer of light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.
Abstract translation: 一种电光器件，包括绝缘层和邻近绝缘层的轻载体材料层。 载光材料层，例如硅，包括第一类型的第一掺杂区域和与第一掺杂区域邻接以形成pn结的第二不同类型的第二掺杂区域。 所述第一掺杂区在所述结处具有第一厚度，并且所述第二掺杂区在所述结处具有第二厚度，所述第一厚度大于所述第二厚度，在所述第一掺杂区中限定用于传播光信号的波导肋。 由于结的位置与波导肋的侧壁重合，所以可以使用自对准的工艺来简化制造工艺并提高产量。
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公开(公告)号：US20140355923A1
公开(公告)日：2014-12-04
申请号：US14138152
申请日：2013-12-23
Applicant: HON HAI PRECISION INDUSTRY CO., LTD.
Inventor： HSIN-SHUN HUANG
CPC classification number: G02F1/035 , G02B6/10 , G02B6/122 , G02B6/125 , G02B6/1342 , G02F1/21 , G02F1/225 , G02F1/2257 , G02F2201/063
Abstract: A ridge waveguide structure includes a substrate having a top surface; a ridge structure protruding from the top surface; and a waveguide formed in the ridge structure and a shape of the waveguide is corresponding to a shape of the ridge structure; the ridge structure includes a Y-shaped input section and a Y-shaped output section, the Y-shaped input section includes a total input section, a first branch and a second branch, the first branch and the second branch are diverged from the total input section and converged into the Y-shaped output section. The relation also relates to an electro-optic modulator.
Abstract translation: 脊形波导结构包括具有顶表面的基板; 从顶面突出的脊结构; 并且形成在所述脊结构中的波导和所述波导的形状对应于所述脊结构的形状; 脊形结构包括Y形输入部分和Y形输出部分，Y形输入部分包括总输入部分，第一分支部分和第二分支部分，第一分支部分和第二分支部分从总计 输入部分并收敛到Y形输出部分。 该关系还涉及电光调制器。
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公开(公告)号：US20140233878A1
公开(公告)日：2014-08-21
申请号：US14260883
申请日：2014-04-24
Applicant: FUJIKURA, LTD.
Inventor： Kazuhiro GOI , Kensuke OGAWA
CPC classification number: G02F1/2257 , G02B6/122 , G02B6/2935 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142 , G02B2006/12159 , G02F2001/0151 , G02F2001/212 , G02F2201/063
Abstract: Provided is an optical element including an optical waveguide including a core formed from: a rib part; and a first and second slab parts sandwiching the rib part. The first slab part includes a P-type region, the second slab part includes an N-type region, the rib part includes a P-type region which is in contact with the P-type region provided in the first slab part, and an N-type region which is in contact with the N-type region provided in the second slab part. The rib part includes a top portion which is located above the first and second slab parts and includes an undoped region formed from at least one of an intrinsic region and a low-concentration doping region which is doped at a dopant concentration 1/10 or less of a dopant concentration in at least one of the adjacent P-type region and the adjacent N-type region.
Abstract translation: 本发明提供一种光学元件，其包括：光波导，包括芯，所述芯由以下部分形成：肋部; 以及夹着所述肋部的第一和第二板坯部。 第一板坯部包括P型区域，第二板坯部包括N型区域，肋部包括与设置在第一板坯部中的P型区域接触的P型区域， N型区域与设置在第二板坯部分中的N型区域接触。 肋部分包括位于第一和第二板坯部分上方的顶部部分，并且包括由掺杂浓度为1/10以下的本征区域和低浓度掺杂区域中的至少一个形成的未掺杂区域 在相邻的P型区域和相邻的N型区域中的至少一个中的掺杂剂浓度。
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公开(公告)号：US20140127842A1
公开(公告)日：2014-05-08
申请号：US14071820
申请日：2013-11-05
Applicant: Agency for Science, Technology and Research
Inventor： Jun-Feng Song , Xianshu Luo , Xiaoguang Tu , Patrick Guo-Qiang Lo , Mingbin Yu
IPC: G02B6/134
CPC classification number: G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F2201/063 , G02F2202/06 , G02F2202/105
Abstract: According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.
Abstract translation: 根据本发明的实施例，提供了一种用于形成光调制器的方法。 该方法包括提供衬底，将第一导电类型的掺杂剂注入到衬底中以形成第一掺杂区域，将第二导电类型的掺杂剂注入到衬底中以形成第二掺杂区域，其中第二掺杂区域的一部分是 与第一掺杂区域的一部分形成并重叠，以在第一掺杂区域和第二掺杂区域的各个部分之间形成结，并且其中第二掺杂区域的剩余部分位于结点外部，并形成 脊波导，其中脊波导与结的至少一部分重叠。
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Patent Agency Ranking
公开(公告)号：US20140010493A1
公开(公告)日：2014-01-09
申请号：US14021148
申请日：2013-09-09
Applicant: NGK INSULATORS, LTD.
Inventor： Jungo Kondo , Yuichi Iwata , Tetsuya Ejiri
IPC: G02F1/035
CPC classification number: G02F1/035 , G01N15/1434 , G02B6/122 , G02F1/2252 , G02F1/2255 , G02F2001/212 , G02F2201/05 , G02F2201/063 , G02F2201/066 , G02F2201/127 , G02F2202/28 , G02F2203/21 , G02F2203/50 , G02F2203/60
Abstract: An optical modulation device 1 includes a supporting body 2 including a pair of grooves 2b, 2c and a protrusion 2d between the grooves, a ridge par 6 including a channel type optical wave guide capable of multi mode propagation, a first side plate part 3A formed in a first side of the ridge part 6, a second side plate part 3B formed in a second side of the ridge part, a first adhesive layer 4A adhering the first side plate part 3A and the supporting body 2, a second adhesive layer 4B adhering the second side plate part 3B and the supporting body 2, and a third adhesive layer 4C adhering the ridge part 6 and the protrusion 2d. The device 1 further includes a first electrode 7A provided on a side face 6b of the ridge part on the first groove side, and a side face 3b and an upper face 3c of the first side plate part, and a second electrode 7B provided on a side face 6c of the ridge part 6 in the second groove side, the second groove 2c and a side face 3b and an upper face 3c of the second side plate part 3B. The first electrode 7A and the second electrode 7B apply a modulation voltage modulating light propagating in the channel type optical wave guide.
Abstract translation: 光调制装置1包括支撑体2，该支撑体2包括一对槽2b，2c和槽之间的突起2d，包括能够进行多模传播的通道型光波导的脊6，形成的第一侧板部3A 在脊部6的第一侧，形成在脊部的第二侧的第二侧板部3B，附着有第一侧板部3A和支撑体2的第一粘合层4A，附着有第二粘合层4B的第二粘合层4B 第二侧板部3B和支撑体2，以及粘附脊部6和突起2d的第三粘合层4C。 装置1还包括设置在第一槽侧的脊部的侧面6b上的第一电极7A和第一侧板部的侧面3b和上表面3c，以及设置在第一槽部侧的第二电极7B 第二槽侧的脊部6的侧面6c，第二槽2c和侧面3b以及第二侧板部3B的上表面3c。 第一电极7A和第二电极7B施加在通道型光波导中传播的调制电压调制光。
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公开(公告)号：US08597966B2
公开(公告)日：2013-12-03
申请号：US13739169
申请日：2013-01-11
Applicant: Sumitomo Electric Industries, Ltd.
Inventor： Kenji Hiratsuka
IPC: H01L21/308
CPC classification number: H01L21/308 , G02B6/12004 , G02B6/136 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02F1/025 , G02F1/2257 , G02F2201/063
Abstract: A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure.
Abstract translation: 一种半导体光学器件的制造方法，其特征在于，包括：利用第一掩模蚀刻层叠半导体层而形成条状光波导的第一蚀刻工序，所述条状光波导包括第一和第二条形光波导 和第二区域; 在剩下第一掩模的堆叠半导体层上形成第二掩模的步骤; 以及第二蚀刻步骤，用第一和第二掩模蚀刻第一区域上的堆叠半导体层。 第二掩模具有用于形成台面结构的图案，并且包括开口，该开口包括远离第一条形光波导的侧表面的第一和第二开口边缘。 在第二蚀刻步骤中，台面结构由第一条形光波导形成。 在第一蚀刻步骤中形成的第二条形光波导具有脊结构。
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公开(公告)号：US20130308892A1
公开(公告)日：2013-11-21
申请号：US13631757
申请日：2012-09-28
Applicant: HSIN-SHUN HUANG
Inventor： HSIN-SHUN HUANG
IPC: G02F1/035
CPC classification number: G02F1/3132 , G02F1/0316 , G02F1/035 , G02F2201/063
Abstract: An electro-optic modulator includes a substrate comprising a surface, a pair of transmission lines formed in the surface and extending substantially in parallel with each other, a pair of first strip electrodes formed on the surface and covering the respective transmission lines, and a pair of second strip electrodes positioned at two sides of the first strip electrodes and parallel with the first strip electrodes.
Abstract translation: 一种电光调制器，包括：基板，包括表面，形成在所述表面中并基本上彼此平行延伸的一对传输线;形成在所述表面上并覆盖相应传输线的一对第一条形电极，以及一对 位于第一条状电极的两侧并与第一条状电极平行的第二条状电极。
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公开(公告)号：US20130183780A1
公开(公告)日：2013-07-18
申请号：US13739169
申请日：2013-01-11
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Kenji HIRATSUKA
IPC: H01L21/308
CPC classification number: H01L21/308 , G02B6/12004 , G02B6/136 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02F1/025 , G02F1/2257 , G02F2201/063
Abstract: A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure.
Abstract translation: 一种半导体光学器件的制造方法，其特征在于，包括：利用第一掩模蚀刻层叠半导体层而形成条状光波导的第一蚀刻工序，所述条状光波导包括第一和第二条形光波导 和第二区域; 在剩下第一掩模的堆叠半导体层上形成第二掩模的步骤; 以及第二蚀刻步骤，用第一和第二掩模蚀刻第一区域上的堆叠半导体层。 第二掩模具有用于形成台面结构的图案，并且包括开口，该开口包括远离第一条形光波导的侧表面的第一和第二开口边缘。 在第二蚀刻步骤中，台面结构由第一条形光波导形成。 在第一蚀刻步骤中形成的第二条形光波导具有脊结构。
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30.发明授权公开(公告)号：US08300991B2
公开(公告)日：2012-10-30
申请号：US12736127
申请日：2009-01-21
Applicant: Tomoaki Kato
Inventor： Tomoaki Kato
CPC classification number: G02B6/12004 , B82Y20/00 , G02B6/131 , G02B6/136 , G02F1/01708 , G02F1/2255 , G02F1/2257 , G02F2001/0151 , G02F2001/0154 , G02F2001/212 , G02F2201/063 , G02F2201/127 , G02F2202/06 , G02F2202/101 , G02F2202/102 , G02F2202/108 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L21/02581
Abstract: Provided is a traveling-wave type semiconductor optical phase modulator capable of high speed and low voltage operation by improving an n-SI-i-n-type layered structure. A first exemplary aspect of the present invention is a waveguide-type semiconductor optical modulator including: a semiconductor substrate (101); a first n-type cladding layer (103) and a second n-type cladding layer (108) formed on the semiconductor substrate (101); an undoped optical waveguide core layer (104) and an electron trapping layer (107) formed between the first n-type cladding layer (103) and the second n-type cladding layer (108); and a hole supplying layer (106) formed between the undoped optical waveguide core layer (104) and the electron trapping layer (107).
Abstract translation: 提供一种通过改善n-SI-i-n型分层结构能够实现高速和低电压操作的行波型半导体光相位调制器。 本发明的第一示例性方面是一种波导型半导体光调制器，包括：半导体衬底（101）; 形成在半导体基板（101）上的第一n型覆盖层（103）和第二n型覆盖层（108）。 形成在第一n型包覆层（103）和第二n型包覆层（108）之间的未掺杂的光波导芯层（104）和电子俘获层（107）。 以及形成在未掺杂的光波导芯层（104）和电子俘获层（107）之间的孔供给层（106）。
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