SAVING POSITION OF A WEAR LEVEL ROTATION
    22.
    发明申请

    公开(公告)号:US20180046576A1

    公开(公告)日:2018-02-15

    申请号:US15234982

    申请日:2016-08-11

    Abstract: In one example in accordance with the present disclosure, a system may include a wear level handler to start a current rotation of a wear level algorithm through a plurality of cache line addresses in a region of memory and a location storer to store a rotation count of the rotation. The system may also include a data mover to move a cache line from the selected cache line address to a gap cache line address corresponding to the additional cache line address and a metadata setter to set a metadata of the gap cache line address to a value corresponding to the current rotation. The system may also include a current position determiner to determine, based on the value of at least one metadata and the rotation count, a current position of the current rotation after a power loss event.

    RAID SYSTEM AND METHOD BASED ON SOLID-STATE STORAGE MEDIUM

    公开(公告)号:US20170329522A1

    公开(公告)日:2017-11-16

    申请号:US15527781

    申请日:2014-12-31

    Inventor: Xueshi YANG

    Abstract: “A RAID system and method based on a solid-state storage medium. The system includes a plurality of solid-state storage devices and a main control unit. Each solid-state storage device includes a solid-state storage medium and a controller for controlling reading and writing of the solid-state storage medium. The main control unit is electrically connected to the controller of each of the solid-state storage devices in a RAID array. The main control unit is used for performing address mapping from a logical block address in the RAID array to a physical block address of the flash memory solid-state storage device. The address mapping and the RAID function can be integrated to solve the problems of write amplification and low performance. The unified management of address mapping of the solid-state storage devices can be implemented to improve the efficiency of garbage collection and wear leveling of the solid-state storage system.”

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