Abstract:
A focused ion beam (FIB) is used to mill a test slice to form an observable wall for a transmission electron microscope (TEM). A slanting angle .theta. of the observable wall surface is automatically formed. The method for milling the test slice includes the following steps: The first step is to measure the slanting angle .theta.. The next step is to tilt the test slice with the slanting angle .theta. in both a counterclockwise direction and a clockwise direction and to perform FIB milling so that the TEM observable wall has a uniform thickness. Furthermore, during the FIB milling, an aperture in the TEM observable wall serves as a milling stop signal.
Abstract:
Disclosed is a scanning charged particle microscope provided with an aberration measuring means that measures high-order geometrical aberration at high precision and high speed. An image obtained by a single-hole aperture and an image obtained by a multiple-hole aperture arranged in a region larger than that for the single-hole aperture are deconvoluted, an aberration quantity is determined based on the profiles of beams tilted in a plurality of directions and the obtained quantity is fed back to an aberration corrector.
Abstract:
A method of evaluating astigmatism of an irradiation system irradiating an electron beam is disclosed. In this method, a figure pattern consisting of plural (for example, four) concentric circles is formed on a reference sample “WP” and an image (scanned image) is formed based on an electron signal obtained by scanning the electron beam onto the reference sample “WP”. In the scanned image, the image has a blur in a region with its longitudinal direction parallel to the generating direction of the astigmatism and the size of the blur depends on magnitude of the astigmatism. Therefore, the direction and the magnitude of the astigmatism of the irradiation system of an irradiation apparatus can be detected based on the obtained scanned image.
Abstract:
A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.
Abstract:
Charged particle beam equipment enables the simultaneous measurement and correction of magnification errors in both X and Y directions in one measurement without requiring the elimination of displacement, if any, in rotation direction between the direction of a periodic structure pattern of a sample having a known periodic structure and the X or Y direction on an electron image of the sample. The charged particle beam equipment of the invention enables the simultaneous measurement of magnification errors in the X and Y directions by FFT transformation and coordinate transformation of an electron image, even when there is a displacement in rotation direction between the direction of the periodic structural pattern and the X or Y direction on the electron image of the sample.
Abstract:
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction of coordinates and displaying it with vectors 39, a function of automatically determining a searching magnification for automatic object detection from the obtained information after correction of coordinates, and a function of calculating the frequency of occurrence of objects or defects and a time required for measurement from the searching magnification and conditions of measurement.
Abstract:
The invention relates to a method for determining lens errors in a Scanning Electron Microscope, more specifically to a sample that enables such lens errors to be determined. The invention describes, for example, the use of cubic MgO crystals which are relatively easy to produce as so-called ‘self-assembling’ crystals on a silicon wafer. Such crystals have almost ideal angles and edges. Even in the presence of lens errors this may give a clear impression of the situation if no lens errors are present. This enables a good reconstruction to be made of the cross-section of the beam in different under- and over-focus planes. The lens errors can then be determined on the basis of this reconstruction, whereupon they can be corrected by means of a corrector.
Abstract:
There is provided a transmission electron microscope capable of a capturing continuous field-of-view image without having an influence of aberration. In order to obtain an electron beam image of the whole of a predetermined range of a sample, the transmission electron microscope specifies a region with little aberration in a field of view of an image pickup device, moves a sample stage in units of the specified regions, captures the whole of the predetermined range as a plurality of continuous field-of-view images.
Abstract:
A system is presented for evaluating the performance of a particle detecting and measuring instrument wherein the instrument receives a specimen and detects the number of particles on the specimen and measures the descriptive parameters of the particles. The system includes a known specimen received by the instrument and wherein the known specimen has known particles on the specimen, with known parameters of each known particle on the specimen. The instrument detects the known particles and measures the parameters thereof. A matching of individual measured particles is made against individual known particles by means of selected known parameters thereof. A comparison is made of the parameters of each measured particle against the parameters of each known particle to which the measured particle was matched and an indication is provided of the instrument's performance as a function of the matching and the comparison.
Abstract:
The invention relates to a method for determining lens errors in a Scanning Electron Microscope, more specifically to a sample that enables such lens errors to be determined. The invention describes, for example, the use of cubic MgO crystals which are relatively easy to produce as so-called ‘self-assembling’ crystals on a silicon wafer. Such crystals have almost ideal angles and edges. Even in the presence of lens errors this may give a clear impression of the situation if no lens errors are present. This enables a good reconstruction to be made of the cross-section of the beam in different under- and over-focus planes. The lens errors can then be determined on the basis of this reconstruction, whereupon they can be corrected by means of a corrector.