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    CHARGED-PARTICLE BEAM DEVICE FOR DIFFRACTION ANALYSIS
    1.
    发明公开
    CHARGED-PARTICLE BEAM DEVICE FOR DIFFRACTION ANALYSIS 审中-公开

    公开(公告)号：US20240355577A1

    公开(公告)日：2024-10-24

    申请号：US18683071

    申请日：2022-08-11

    Applicant: ELDICO SCIENTIFIC AG

    Inventor： Gunther STEINFELD ,  Harald NIEBEL ,  Christiaan VAN DEN BERG ,  Alexander VAN VEEN ,  Tomi TUOHIMAA

    IPC: H01J37/21 ,  H01J37/14 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J37/295

    CPC classification number: H01J37/21 ,  H01J37/14 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/265 ,  H01J37/2955 ,  H01J2237/002 ,  H01J2237/0453 ,  H01J2237/1532

    Abstract: A charged-particle beam device for charged-particle crystallography of a crystalline sample comprises a charged-particle source for generating a charged-particle beam to be radiated onto a sample and a charged-particle-optical system downstream the charged-particle source, which is configured to form in a diffraction mode a substantially parallel charged-particle beam at a predefined sample position and in an imaging mode a focused charged-particle beam having a focus at the predefined sample position. The charged-particle-optical system comprises a charged-particle zoom lens system consisting of a first magnetic lens, a second magnetic lens downstream the first magnetic lens and a third magnetic lens downstream the second magnetic lens, wherein at least the second magnetic lens, preferably each one of the first, the second and the third magnetic lens has a variable focal length. The charged-particle-optical system further comprises a single beam limiting aperture with a fixed aperture diameter arranged at a fixed position between the second magnetic lens and the third magnetic lens for limiting the diameter of the charged-particle beam at the sample position. The charged-particle-optical system is configured such that the diameter of the charged-particle beam at the sample position is in a range between 100 nanometer and 1000 nanometer, in particular between 220 nanometer and 250 nanometer, in the diffraction mode, and in a range between 10 nanometer and 200 nanometer in the imaging mode.

    ANALYSIS METHOD, COMPUTER-READABLE MEDIUM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明公开
    ANALYSIS METHOD, COMPUTER-READABLE MEDIUM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240347315A1

    公开(公告)日：2024-10-17

    申请号：US18582608

    申请日：2024-02-20

    Applicant: FUJI ELECTRIC CO., LTD.

    Inventor： Yusuke SHIMIZU

    IPC: H01J37/28 ,  H01J37/22 ,  H01J37/26

    CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/2814

    Abstract: Provided is an analysis method for generating, by acquiring for a plurality of set ranges a distribution representative value representing a representative value of a first characteristic and a second characteristic of a plurality of measurement groups included in the same set range, and by approximating a relationship between the distribution representative value and a concentration of a first impurity with a first approximate line including a curved line part, a relationship information indicating a relationship between a value of the set range and the distribution representative value, generating a virtual distribution in which samples of the first characteristic and the second characteristic are distributed in a range that is wider than a measurement distribution by simulating, based on the measurement distribution and the relationship information, the first characteristic and the second characteristic of a plurality of virtual semiconductor devices, and calculating a defect rate in the virtual distribution.

    CHARGED PARTICLE SENSORS INCLUDING WIDE BANDGAP MATERIALS
    3.
    发明公开
    CHARGED PARTICLE SENSORS INCLUDING WIDE BANDGAP MATERIALS 审中-公开

    公开(公告)号：US20240194442A1

    公开(公告)日：2024-06-13

    申请号：US18065438

    申请日：2022-12-13

    Applicant: FEI Company

    Inventor： Branislav Straka ,  Jan Lásko ,  Libor Novák ,  Vojtêch Mahel ,  Radek Smolka ,  Petr Glajc

    IPC: H01J37/28 ,  H01J37/141 ,  H01J37/244 ,  H01J37/26

    CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/24475

    Abstract: Charged particle microscopy systems, sensors, and techniques are provided. A charged particle sensor can include a housing, configured to be incorporated into a scanning electron microscope (SEM). The charged particle sensor can include a detector cell, mechanically coupled with the housing. The detector cell can include an acceptor layer including a semiconducting material characterized by a bandgap equal to or greater than about 2.0 eV. The acceptor layer can define a first surface and a second surface opposing the first surface. The detector cell can include a first conducting layer disposed on the first surface, a second conducting layer disposed on the second surface, a first contact, electrically coupled with the first conducting layer, and a second contact, electrically coupled with the second conducting layer.

    Charged Particle Beam System
    4.
    发明公开
    Charged Particle Beam System 审中-公开

    公开(公告)号：US20240186108A1

    公开(公告)日：2024-06-06

    申请号：US17773127

    申请日：2019-11-22

    Applicant: Hitachi High-Tech Corporation

    Inventor： Hirokazu TAMAKI ,  Hiromi MISE

    IPC: H01J37/26 ,  G01N23/06 ,  G01N23/2251 ,  H01J37/20 ,  H01J37/21

    CPC classification number: H01J37/265 ,  G01N23/06 ,  G01N23/2251 ,  H01J37/20 ,  H01J37/21 ,  H01J2237/1534

    Abstract: A charged particle beam system includes a charged particle beam apparatus that irradiates, via a charged particle optical system, a sample with a charged particle beam from a charged particle source and a control system that controls the charged particle ray apparatus. The control system evaluates, with respect to a signal obtained by irradiating the sample with the charged particle beam via the charged particle optical system having an astigmatic aberration, a score based on an index that changes in accordance with a spatial spread of the charged particle beam and determines a positional relation between a height position of the sample and a convergence plane of the charged particle beam based on the astigmatic aberration of the charged particle optical system and a result of the evaluation.

    INSPECTION SYSTEM
    7.
    发明公开
    INSPECTION SYSTEM 审中-公开

    公开(公告)号：US20240151665A1

    公开(公告)日：2024-05-09

    申请号：US18282624

    申请日：2021-03-29

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yohei NAKAMURA ,  Naoko TAKEDA ,  Natsuki TSUNO ,  Satoshi TAKADA ,  Heita KIMIZUKA

    IPC: G01N23/2251 ,  H01J37/26

    CPC classification number: G01N23/2251 ,  H01J37/265 ,  G01N2223/6116 ,  H01J2237/24564 ,  H01J2237/2806

    Abstract: Provided is an inspection system capable of estimating electric characteristics of a sample with high accuracy regardless of an initial charging state of a wafer. The inspection system includes a charged particle beam device and a computer system, and inspects the electric characteristics of the sample. The inspection system evaluates initial charging of an inspection region including inspection patterns based on reference data indicating a secondary charged particle signal from a reference pattern corresponding to a plurality of pulse conditions. The reference pattern has the same electric characteristics as the inspection pattern and initial charging therein caused by electric charges that are not emitted according to a discharge time constant of the sample is negligible. The reference pattern is obtained by irradiating the reference pattern with a pulse charged particle beam under a plurality of pulse conditions.

    Application Management For Charged Particle Microscope Devices
    9.
    发明公开
    Application Management For Charged Particle Microscope Devices 审中-公开

    公开(公告)号：US20240071717A1

    公开(公告)日：2024-02-29

    申请号：US17823669

    申请日：2022-08-31

    Applicant: FEI Company

    Inventor： Pavel Potocek ,  Maurice Peemen ,  Remco Schoenmakers

    IPC: H01J37/26 ,  H01J37/28

    CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J2237/31745

    Abstract: Disclosed herein are scientific instrument support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, an example method may comprise receiving, by a first device located at a premises and from a second device located external to the premises, and via a network, configuration data for a charged particle microscope located at the premises. The method may comprise updating, by the first device and based on the configuration data, one or more configuration settings associated with the charged particle microscope. The method may comprise causing, based on the updated one or more configuration settings, one or more operations associated with the charged particle microscope to be performed.

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