Abstract:
A multiple electron emission device having a substrate, a pair of opposed electrodes disposed on the substrate, and an electron emission section formed with grains between the electrodes. Selected portions of the electron emission section are coated with a conductor, semiconductor or insulating material by mask deposition or the like so as to divide the electron emission section into a dotted or linear array of electron emitting portions.
Abstract:
An electron-emitting device is provided which includes a laminate having an insulating layer held between a pair of electrodes opposing each other, wherein an electron-emitting region insulated from the electrodes is formed at a side end surface of the insulating layer formed at the part at which the electrodes oppose each other, and electrons are emitted from the electron-emitting region by applying a voltage between the electrodes. A method for preparing the electron-emitting device is also provided.
Abstract:
Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.
Abstract:
An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed (21a, 21b) on a surface of a substrate in opposition to each other to form a gap (8) between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion (A) the minimum distance d1 from which to the second electroconductive film (B) is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1≧1.2 is satisfied.
Abstract:
A covering layer for insulating between column wirings and device electrodes is formed in a region including each cross point of the column wirings and row wirings and under the column wirings. Thus, when an electron source plate in which a large number of electron-emitting devices are wired in passive matrix is formed, a defect resulting from an interaction between the device electrodes and the column wirings at the time of wiring formation is reduced to improve insulation reliability. Therefore, a high quality image is obtained by a large size and higher density pixel arrangement in an image-forming apparatus using the electron source plate.
Abstract:
An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
Abstract:
In a process of reducing a resistivity of a polymer film for carbonization in a surface conduction electron-emitting device, by irradiating an energy beam onto the polymer film, when an energy intensity of the beam given in a unit area in a unit time is assumed to be W W/m2, W satisfies a formula W≧2×T×(ρsub·Csub·λsub/τ)1/2, where T is defined as a temperature ° C. at which the polymer film is heated for one hour in a vacuum degree of 1×10−4 Pa to reduce a resistivity of the polymer film to 0.1 Ω·cm, Csub is a specific heat J/kg·K of the substrate, ρsub is a specific gravity kg/m3 of the substrate, λsub is a heat conductivity W/m·K of the substrate, and τ is an irradiation time in the range of 10−9 sec to 10 sec.
Abstract:
Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
Abstract:
An FED device includes an anode electrode formed on a substrate; a phosphor layer formed on the anode electrode; and field emission devices for emitting at least two electron beams onto the phosphor layer. An area where a fluorescent material is excited can be enlarged and luminance and efficiency of the FED can be enhanced.
Abstract:
An electron source substrate has an electron-emitting device consisting of a pair of device electrodes and an electroconductive thin film having an electron-emitting region; and metal wiring coupled to the device electrodes and made in a composition different from that of the device electrodes, on a substrate. A shortest distance between the conductive thin film and the metal wiring along an interface between the device electrodes and the substrate is not less than 50 μm. This configuration is able to effectively prevent diffusion of the wiring metal to the conductive thin film and to the electron-emitting region which can cause degradation of electron emission characteristics.