Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the grid, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips.
Abstract:
Provided is an electron-emitting device which is excellent in electron-emitting efficiency, and may obtain a large electron-emitting amount and stable electron-emitting characteristics. The electron-emitting device includes: a first conductive film and a second conductive film which are provided through a first gap; first carbon films connected to the first conductive film; and second carbon films which are connected to the second conductive film, and are opposed to the first carbon films through second and third gaps. Continuous concave portions are provided in the second and third gaps.
Abstract:
A base body includes a first part and a second part. The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.
Abstract:
Provided is a method for producing a pattern of an electroconductive member, comprising: a step of forming a resin film on a substrate surface; a step of incorporating the first metal component into the resin by applying to the resin a liquid which contains a complex of a first metal component, which contains also a second metal component different from the first component, and to which a compound forming a complex with the second metal component is contacting or contacted preliminary; and a step of baking the resin film to form the electroconductive member from the first metal component incorporated into the resin film. Thus, the second metal component is prevented from adversely affecting the first metal component to be incorporated into the resin.
Abstract:
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
Abstract:
An electron-emitting device includes a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
Abstract:
A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.
Abstract:
A base body includes a first part and a second part, The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.
Abstract:
The present invention is to provide a method for forming various patterns such as a metal or metal compound pattern, in which the amounts of the materials constituting the pattern which are removed during the formation step can be suppressed to the minimum. The method comprises a resin pattern forming step of forming on the surface of a substrate a resin pattern capable of absorbing a solution containing metal components, an absorbing step of dipping the resin pattern in the solution containing metal components to make the resin pattern absorb the solution containing metal components, a washing step of washing the substrate having formed thereon the resin pattern that has absorbed the solution containing metal components, and a burning step of burning the resin pattern after washing.