公开(公告)号：US12282635B2

公开(公告)日：2025-04-22

申请号：US18522230

申请日：2023-11-29

Applicant: E Ink Holdings Inc.

Inventor： Chen Cheng Lin ,  Hung Wei Tseng ,  Yi Chun Kuo ,  Fang Chia Hu

IPC: G06F3/044 ,  G06F3/041

Abstract: A touch display device includes a substrate, a display element layer, a composite substrate, a touch electrode and an adhesive layer. The display element layer is disposed on the substrate. The composite substrate includes a support layer and a moisture barrier layer. The moisture barrier layer is in direct contact with and covers a surface of the support layer. The display element layer is located between the substrate and the composite substrate. A moisture transmission rate of the moisture barrier layer is less than 1×10−2 g/m2/day. The touch electrode is disposed on the composite substrate. The adhesive layer is disposed between the display element layer and the composite substrate.

公开(公告)号：US12281990B2

公开(公告)日：2025-04-22

申请号：US18035938

申请日：2022-02-28

Applicant: Jiangsu University

Inventor： Xuetao Hu ,  Xiaobo Zou ,  Pei Jiang ,  Jiyong Shi ,  Xinai Zhang ,  Xiaowei Huang ,  Zhihua Li ,  Yahui Li ,  Wenting Li ,  Junjun Zhang

IPC: G01N21/84 ,  B01L3/00 ,  C12Q1/32 ,  C12Q1/46 ,  G01N21/64

Abstract: The present invention belongs to the field of organophosphorus pesticide (OP) detection, and relates to a method for detecting an OP by a microfluidic chip based on a fluorescent sensing film. A porous fluorescent sensing film and the microfluidic chip are first constructed. The fluorescent sensing film is fabricated through layer-by-layer self-assembly of a platinum nanoparticle@oxalate-metal-organic framework (MOF) composite and a porous two-dimensional (2D) nanosheet, and has the functions of specifically detecting OPs and blocking macromolecular interferents. The microfluidic chip includes a sample channel, injection channels, reaction tanks, microfluidic channels, a detection tank, and an optical fiber channel, such that sample pretreatment and detection processes are integrated in the chip. An OP detection system is established by combining a portable constant-pressure syringe pump, a laser, a spectrometer, a signal transmitter, and a signal indicator, such that test devices are miniaturized and integrated and the OP detection is standardized.

公开(公告)号：US12281066B1

公开(公告)日：2025-04-22

申请号：US18896739

申请日：2024-09-25

Applicant: ZHEJIANG UNIVERSITY OF TECHNOLOGY

Inventor： Yong Nie ,  Shangzhi Yu ,  Qianhui Weng ,  Hua Zhang ,  Zhendong Liu

IPC: C07C51/09 ,  B01J8/08 ,  B01J8/10

Abstract: The present disclosure relates to a device and process for preparing sebacic acid through electromagnetic induction heating coupled with dry constant-temperature alkaline hydrolysis. The device includes an electromagnetic heating cylinder and a reaction kettle arranged in the electromagnetic heating cylinder, heat storage pellets fill space between the reaction kettle and the electromagnetic heating cylinder, and the heat storage pellets adhere to an inner wall of the electromagnetic heating cylinder and an outer wall of the reaction kettle. The upper end of the reaction kettle is provided with a feeding port, a gas outlet and a temperature measuring port, the reaction kettle is also provided with a stirring device, a lower portion of the reaction kettle is provided with a discharging port, and the feeding port, the gas outlet, the temperature measuring port and the discharging port all extend out of the thermal insulation cotton.

公开(公告)号：US12280578B2

公开(公告)日：2025-04-22

申请号：US18022268

申请日：2021-08-30

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Keisuke Maeda ,  Yuuki Kinpara

IPC: B32B37/12 ,  B32B7/12 ,  B32B9/04 ,  H01L21/683

Abstract: A method for repairing an electrostatic chuck device that is formed by bonding an electrostatic chuck member made of ceramics and a temperature-controlling base member made of metal with a first adhesive layer sandwiched therebetween is provided. The method includes a step of repairing the first adhesive layer that has been eroded by using a cold-curing adhesive.

公开(公告)号：US12279460B2

公开(公告)日：2025-04-15

申请号：US17884533

申请日：2022-08-09

Applicant: Powerchip Semiconductor Manufacturing Corporation

Inventor： Ming-Hui Chen ,  Chih-Feng Lin ,  Chiu-Tsung Huang ,  Hsiang-Hung Chang

IPC: H10D89/60

Abstract: An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region. The N-type drain region is located between the first gate and the second gate. An N-type drift region is located in a P-type substrate between the first gate and the second gate and is located directly below a portion of the first gate and directly below a portion of the second gate. The N-type drain region is located in the N-type drift region. A P-type barrier region is located in the P-type substrate below the N-type drift region. The P-type barrier region has an overlapping portion overlapping the N-type drift region. There is at least one first opening in the overlapping portion.

公开(公告)号：US12279444B2

公开(公告)日：2025-04-15

申请号：US17380041

申请日：2021-07-20

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Yi-Lun Chou ,  Kye Jin Lee ,  Han-Chin Chiu ,  Xiuhua Pan

IPC: H10D30/47 ,  H01L21/02 ,  H10D62/17 ,  H10D62/85

Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is greater than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.

公开(公告)号：US12279062B2

公开(公告)日：2025-04-15

申请号：US18304323

申请日：2023-04-20

Applicant: Guangzhou Tyrafos Semiconductor Technologies Co., LTD

Inventor： Ping-Hung Yin ,  Jia-Shyang Wang ,  Jia-Sian Lyu

IPC: H04N25/78 ,  G06F1/08 ,  H01L25/075 ,  H01L25/18 ,  H03K19/0185 ,  H03L7/099 ,  H04N25/60 ,  H04N25/627 ,  H04N25/63 ,  H04N25/709 ,  H04N25/76 ,  H04N25/77 ,  H04N25/772 ,  H04N25/778 ,  H10F39/00

Abstract: An image sensor and an operation method thereof are provided. The image sensor includes a pixel circuit and a column readout circuit. The pixel circuit includes a pixel unit, a transfer transistor, a reset transistor, a readout transistor and a selection transistor. The column readout circuit includes a first circuit node and a second circuit node. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to a first circuit node, and a second terminal of the first select transistor is coupled to a second circuit node.

公开(公告)号：US12278697B2

公开(公告)日：2025-04-15

申请号：US18037086

申请日：2022-09-01

Applicant: ILD ELECTRONIC CO., LTD.

Inventor： Haibo Ma ,  Shunlung Chang

IPC: H04J3/06

Abstract: A system and a method for multimachine phase synchronization based on optical fiber transmission are provided. The system includes a master and a plurality of slaves, where an optical fiber transmitting interface of the master is connected to an optical fiber receiving interface of one slave, the slave connected to the master is connected in series with the other slaves in turn, the master transmits phase information of a digital reference source thereof as a system synchronous phase signal to the slave connected to the master, the slave takes the received system synchronous phase signal as a phase of the local digital reference source, and transmits the system synchronous phase signal to a slave connected to an optical fiber transmitting interface of the slave through the optical fiber transmitting interface, and when the last slave is connected to the master, the master and the slaves form a closed-loop communication test.

公开(公告)号：US12278540B2

公开(公告)日：2025-04-15

申请号：US17955483

申请日：2022-09-28

Applicant: Honda Motor Co., Ltd.

Inventor： Satoshi Yamada

IPC: H02K9/19 ,  H02K5/20

Abstract: A vertical motor with a cooling structure for an electrical operation machine is provided. The vertical motor includes a driving shaft, having a rotational axis and arranged along a vertical direction; a rotor, rotating with the driving shaft; a stator, arranged around the rotor; a winding, arranged around the stator; a housing, having a wall portion and a bottom portion and accommodating the driving shaft, the rotor and the stator; and an oil sump, provided on the bottom portion of the housing for accumulating a cooling fluid in a manner that a lower portion of the winding is immersed in the cooling fluid. The oil sump has an inner peripheral side wall, the inner peripheral side wall is vertically arranged with respect to the bottom portion of the housing and positioned at an inner side than the lower portion of the winding.

公开(公告)号：US12278210B2

公开(公告)日：2025-04-15

申请号：US17883595

申请日：2022-08-08

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Kai Zhu ,  Chien-Kee Pang ,  Chia-Liang Liao

IPC: H01L21/00 ,  H01L21/02 ,  H01L23/00

Abstract: Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.