公开(公告)号：US20250116902A1

公开(公告)日：2025-04-10

申请号：US18982529

申请日：2024-12-16

Applicant: Japan Display Inc.

Inventor： Kojiro IKEDA ,  Takeo KOITO ,  Tae KUROKAWA

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/139

Abstract: A liquid crystal light control device includes a plurality of liquid crystal cells arranged in a stack. Each of the plurality of liquid crystal cells includes a first substrate and a second substrate opposite the first substrate, a first electrode and a second electrode both of which have a strip pattern arranged on at least one of the first substrate and the second substrate, a first alignment film on the first substrate and a second alignment film on the second substrate, and a liquid crystal layer between the first substrate and the second substrate. The strip pattern is arranged alternately with the first electrode and the second electrode, an alignment direction of the first alignment film is aligned with a direction of extension of the strip pattern, and an alignment direction of the second alignment film is arranged intersecting the alignment direction of the first alignment film.

公开(公告)号：US12272330B2

公开(公告)日：2025-04-08

申请号：US18372733

申请日：2023-09-26

Applicant: Japan Display Inc.

Inventor： Kazune Matsumura

IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368

Abstract: In a liquid crystal display device, scanning lines, video signal lines and pixels are formed in respective regions enclosed by the scanning lines and the video signal lines. In the liquid crystal display device, a pixel electrode and a thin-film transistor (TFT) are formed in each of the pixels, a first insulating film is formed between a common electrode formed in common for a plurality of pixels and the pixel electrode, the pixel electrode is connected to one of the video signal lines via the TFT, the TFT has a gate connected to one of the scanning lines, a constant common voltage is supplied to the common electrode, the scanning lines are sequentially scanned from a first scanning line in one frame, and a predetermined voltage is applied for a predetermined period to all the scanning lines before a scanning signal is applied to the first scanning line.

公开(公告)号：US20250113709A1

公开(公告)日：2025-04-03

申请号：US18895446

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Masahiro WATABE

IPC: H10K59/124 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131

Abstract: A display device includes a light-emitting element, a first transistor, and a second transistor, the first transistor includes a first gate electrode, a first insulating film, a first oxide semiconductor layer, a second insulating film, and a first conductive layer provided on the second insulating film, and the second transistor includes the first insulating film, a second oxide semiconductor layer, a second insulating film, and a second gate electrode, wherein an etching rate of the first oxide semiconductor layer and the second semiconductor layer is less than 3 nm/min when the first oxide semiconductor layer and the second semiconductor layer are etched using an etching solution containing phosphoric acid as a main component at 40° C.

公开(公告)号：US20250113546A1

公开(公告)日：2025-04-03

申请号：US18897024

申请日：2024-09-26

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Takeshi SAKAI ,  Akihiro HANADA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes a gate electrode, an oxide semiconductor layer having a polycrystalline structure, and a gate insulating layer between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes a source region and a drain region each containing an impurity element, a channel region between the source region and the drain region, and a first region adjacent to the channel region. The first region includes a first edge extending along a first direction travelling from the source region to the drain region. The first region has a higher electrical resistivity than each of the source region and the drain region. An etching rate of the oxide semiconductor layer is less than 3 nm/min when the oxide semiconductor layer is etched using an etching solution containing phosphoric acid as a main component at 40° C.

公开(公告)号：US20250113544A1

公开(公告)日：2025-04-03

申请号：US18895591

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device according to an embodiment of the present invention includes: an oxide semiconductor layer; a first gate electrode facing the oxide semiconductor layer; a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; an electrode arranged in a region overlapping the oxide semiconductor layer in a plan view and electrically connected to the oxide semiconductor layer; and a metal nitride layer between the oxide semiconductor layer and the electrode, wherein the oxide semiconductor layer is polycrystalline, and an etching rate of the oxide semiconductor layer with respect to an etchant containing phosphoric acid as a main component is less than 3 nm/min at 40° C.

公开(公告)号：US20250113535A1

公开(公告)日：2025-04-03

申请号：US18895467

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Masahiro WATABE

IPC: H01L29/786

Abstract: A semiconductor device includes a light shielding layer, a first silicon nitride insulating layer in contact with the light shielding layer with a first interface, a first silicon oxide insulating layer in contact with the first silicon nitride layer with a second interface, and an oxide semiconductor layer over the first silicon oxide insulating layer. The first silicon oxide insulating layer is in contact with the second silicon oxide insulating layer. A thickness t of the first silicon nitride layer satisfies a condition in which light reflected at the first interface and light reflected at the second interface weaken each other when light having a wavelength of 450 nm is incident on the first silicon nitride insulating layer at an angle of 60 degrees from a normal direction of the second interface.

公开(公告)号：US20250110370A1

公开(公告)日：2025-04-03

申请号：US18888357

申请日：2024-09-18

Applicant: Japan Display Inc.

Inventor： Takashi OTA ,  Michihide SHIBATA ,  Toshihiro YAJIMA

IPC: G02F1/13357 ,  G02F1/1335

Abstract: A task of the present invention is to realize a display device with high definition and high contrast by means of local dimming. The configuration is as follows. A liquid crystal display device including a display panel and a back light, the back light having a light source and a group of optical sheets, the light source including a light source substrate and LEDs arranged on the light source substrate, the light source being divided into segments in a plan view, the segment including at least one LED, characterized in that the segment is surrounded by a stacked structure of a lower reflection wall and an upper reflection wall.

公开(公告)号：US20250110267A1

公开(公告)日：2025-04-03

申请号：US18899142

申请日：2024-09-27

Applicant: Japan Display Inc.

Inventor： Kentaro OKUYAMA ,  Yuuji OOMORI ,  Makoto MIYAO

IPC: F21V8/00 ,  G02F1/13357

Abstract: According to one embodiment, a display device includes a display panel, a transparent substrate, a fixing member, and a first light source unit. The transparent substrate has a first main face, a first incident face which is a first side face in contact with the first main face at a first edge, and a first non-incident face which is a second side face in contact with the first main face at a second edge. A shape of the first incident face and a shape of the first non-incident face are different from each other.

公开(公告)号：US12265308B2

公开(公告)日：2025-04-01

申请号：US18517743

申请日：2023-11-22

Applicant: Japan Display Inc.

Inventor： Kentaro Okuyama ,  Yoshihide Ohue ,  Hiroki Sugiyama ,  Tomoyuki Tada

IPC: G02F1/1362 ,  G02F1/1334 ,  G02F1/1368

Abstract: According to one embodiment, a display device including a first substrate including a first pixel and a second pixel, a second substrate, a liquid crystal layer containing polymer and liquid crystal molecules, and a light emitting element, wherein the second pixel is located between the light emitting element and the first pixel, the first substrate includes a switching element including a semiconductor layer arranged in the first pixel, a pixel electrode, and a first light shielding portion arranged in the second pixel and being adjacent to the semiconductor layer, the first light shielding portion is located between the semiconductor layer and the light emitting element in planar view and located on a side closer to the first pixel than a center of the second pixel.

公开(公告)号：US20250107428A1

公开(公告)日：2025-03-27

申请号：US18973592

申请日：2024-12-09

Applicant: Japan Display Inc.

Inventor： Yasushi TOMIOKA ,  Akio TAKIMOTO

IPC: H10K85/10 ,  G06F3/042 ,  H10K30/87

Abstract: A method for manufacturing a photoelectric conversion element according to an aspect includes an active layer forming step of forming an active layer having a repeating unit represented by Chemical Formula 1. The active layer forming step includes: a first layer forming step of forming a first layer by applying polyamic acid serving as a precursor; a first heating step of heating the first layer at 120° C. for 20 minutes to 60 minutes; and a second heating step of heating the first layer at 230° C. to 280° C. for 10 minutes.