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公开(公告)号：US20210190292A1
公开(公告)日：2021-06-24
申请号：US17015094
申请日：2020-09-09
Applicant: Lextar Electronics Corporation
Inventor： Hsu-Wen CHENG
IPC: F21V5/04
Abstract: An optical element includes a bottom surface, a total reflection surface above the bottom surface, a recess recessed from the bottom surface toward the total reflection surface and first and second light exit surfaces. The optical element has a central axis perpendicular to the bottom surface. The total reflection surface has a peripheral boundary away from the central axis. The first light exit surface is connected to the peripheral boundary of the total reflection surface and extends toward the bottom surface away from the central axis. The second light exit surface is connected to the first light exit surface, extends away from the central axis, and is connected to the bottom surface. Each of the first and second light exit surfaces is consisted of at least one linear sub-refractive surface. Each linear sub-refractive surface is a straight line in any cross section passing through the central axis.
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公开(公告)号：US20210143133A1
公开(公告)日：2021-05-13
申请号：US16699091
申请日：2019-11-28
Applicant: Lextar Electronics Corporation
Inventor： Hung-Chun TONG , Fu-Hsin CHEN , Wen-Wan TAI , Yu-Chun LEE , Tzong-Liang TSAI
IPC: H01L25/075 , H01L33/58 , H01L33/52
Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.
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公开(公告)号：US20210134625A1
公开(公告)日：2021-05-06
申请号：US16693400
申请日：2019-11-25
Applicant: Lextar Electronics Corporation
Inventor： Fu-Hsin CHEN , Yu-Chun LEE
IPC: H01L21/67
Abstract: A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes an elastic plate, a substrate, a temperature-controlled adhesive layer, at least one heating element and a power source. The elastic plate has a first surface and a second surface opposite to each other. The substrate is disposed on the first surface. The temperature-controlled adhesive layer is disposed on the second surface and configured to adhere the micro elements. The heating element is disposed between the second surface and the temperature-controlled adhesive layer. The power source is electrically connected with the heating element. A viscosity of the temperature-controlled adhesive layer varies with a temperature of the temperature-controlled adhesive layer.
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公开(公告)号：US20210126167A1
公开(公告)日：2021-04-29
申请号：US16698978
申请日：2019-11-28
Applicant: Lextar Electronics Corporation
Inventor： Chang-Zhi ZHONG , Hung-Chia WANG , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.
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公开(公告)号：US10971650B2
公开(公告)日：2021-04-06
申请号：US16524165
申请日：2019-07-29
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi Kuo
Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.
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Patent Agency Ranking
公开(公告)号：US10944034B2
公开(公告)日：2021-03-09
申请号：US16541132
申请日：2019-08-14
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi Kuo
Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.
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公开(公告)号：US20210043129A1
公开(公告)日：2021-02-11
申请号：US16672510
申请日：2019-11-03
Applicant: Lextar Electronics Corporation
Inventor： Chien-Nan YEH , Jian-Chin LIANG
Abstract: The present disclosure relates to a pixel circuit including a light emitting unit, a processing circuit and a driving circuit. The processing circuit is configured to receive a frame display signal, and is configured to calculate the frame display signal to generate a driving duty cycle corresponding to a driving period according to a driving current value. The driving circuit is electrically connected to the processing circuit and the light emitting unit, and is configured to drive the light emitting unit during the driving period according to the driving duty cycle, the driving current value and a driving frequency.
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公开(公告)号：US10811396B2
公开(公告)日：2020-10-20
申请号：US16252690
申请日：2019-01-20
Applicant: Lextar Electronics Corporation
Inventor： Cheng-Yu Tsai , Jian-Chin Liang , Jo-Hsiang Chen
IPC: H01J1/62 , H01J63/04 , G02B5/02 , G02F1/1335 , G02B5/30 , H01L25/075 , G02B1/11 , H01L33/58 , H01L33/48
Abstract: A display device includes a substrate, a light-emitting member, and an anti-reflective glass layer. The light-emitting member is on the substrate. The anti-reflective glass layer is over the light-emitting member, and the anti-reflective glass layer has a transmittance of 40-95%. The anti-reflective glass layer includes a glass layer and a light-absorbing layer. The glass layer has a rough top surface and a haze of 70-80%. The light-absorbing layer is on the rough top surface of glass layer.
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公开(公告)号：US20200251640A1
公开(公告)日：2020-08-06
申请号：US16777796
申请日：2020-01-30
Inventor： Shiou-Yi KUO , Jian-Chin LIANG , Shen-De CHEN
Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.
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公开(公告)号：US20200235266A1
公开(公告)日：2020-07-23
申请号：US16742891
申请日：2020-01-14
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi KUO , Te-Chung WANG
Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.
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