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    Method of unloading substrates in chemical-mechanical polishing apparatus
    31.
    发明授权
    Method of unloading substrates in chemical-mechanical polishing apparatus 有权
    在化学机械抛光装置中卸载基板的方法

    公开(公告)号：US06558228B1

    公开(公告)日：2003-05-06

    申请号：US09439363

    申请日：1999-11-15

    Applicant: Wen-Kung Cheng ,  Hung-Ju Chien ,  Jin-Chang Chen ,  Ying-Lang Wang

    Inventor： Wen-Kung Cheng ,  Hung-Ju Chien ,  Jin-Chang Chen ,  Ying-Lang Wang

    IPC: B24B4900

    CPC classification number: B24B37/30 ,  H01L21/30625

    Abstract: An improved and new process for separating a substrate from a wetted polishing pad in a CMP apparatus has been developed. Following CMP the polishing pad is wetted with a low surface tension liquid and the substrate is moved across the surface of the polishing pad to cause the interface between the substrate and the polishing pad to be wetted with the low surface tension liquid. The force required to cause separation of the substrate from the polishing pad wetted with said low surface tension liquid is reduced by a factor of about 10 to 30% and the breakage of fragile semiconductor wafer substrates during the unloading operation is markedly reduced. Suitable low surface tension liquids are water at a temperature between about 50° C. and 80° C., or solutions of water with long chain surfactants, such as poly-acrylate, poly-vinyl alcohol, butanol, pantanol or isopropol alcohol.

    Abstract translation: 已经开发了一种用于在CMP设备中从衬底浸渍的抛光垫分离衬底的改进和新的方法。 在CMP之后，抛光垫用低表面张力液体润湿，并且将衬底移动穿过抛光垫的表面，以使衬底和抛光垫之间的界面用低表面张力液体润湿。 导致基板与被所述低表面张力液体润湿的抛光垫分离所需的力降低约10％至30％，并且在卸载操作期间脆性半导体晶片基板的断裂显着降低。 合适的低表面张力液体是在约50℃至80℃之间的温度下的水，或水与长链表面活性剂如聚丙烯酸酯，聚乙烯醇，丁醇，金刚烷醇或异丙醇的溶液。

    Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity
    32.
    发明授权
    Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity 有权
    用于形成具有增强的膜厚度均匀性的微电子层的等离子体增强化学气相沉积（PECVD）方法

    公开(公告)号：US06281146B1

    公开(公告)日：2001-08-28

    申请号：US09396517

    申请日：1999-09-15

    Applicant: Ying-Lang Wang ,  Hui-Ling Wang ,  Jowei Dun ,  Szu-An Wu

    Inventor： Ying-Lang Wang ,  Hui-Ling Wang ,  Jowei Dun ,  Szu-An Wu

    IPC: H01L2131

    CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/5096 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

    Abstract: A method for forming a microelectronic layer. There is first provided a substrate. There is then formed over the substrate the microelectronic layer while employing a plasma enhanced chemical vapor deposition (PECVD) method employing a source material gas and a carrier gas, wherein there is employed a sufficiently low plasma power, a sufficiently low source material gas:carrier gas flow rate ratio and a sufficiently high carrier gas atomic mass such that the microelectronic layer is formed with enhanced film thickness uniformity. The method may be employed for forming ion implant screen layers, such as silicon oxide ion implant screen layers, with enhanced film thickness uniformity.

    Abstract translation: 一种形成微电子层的方法。 首先提供基板。 然后在采用使用源材料气体和载气的等离子体增强化学气相沉积（PECVD）方法的基板上形成微电子层，其中采用足够低的等离子体功率，足够低的源材料气体：载体 气体流量比和足够高的载气原子质量，使得微电子层形成为具有增强的膜厚均匀性。 该方法可用于形成具有增强的膜厚度均匀性的离子注入屏幕层，例如氧化硅离子注入屏幕层。

    Obtaining the better defect performance of the fuse CMP process by adding slurry polish on more soft pad after slurry polish
    33.
    发明授权
    Obtaining the better defect performance of the fuse CMP process by adding slurry polish on more soft pad after slurry polish 有权
    通过在浆液抛光后在更软的垫上添加浆料抛光，获得熔融CMP工艺的更好的缺陷性能

    公开(公告)号：US06248002B1

    公开(公告)日：2001-06-19

    申请号：US09421509

    申请日：1999-10-20

    Applicant: Hui-Ling Wang ,  Tong-Hua Kuan ,  Ying-Lang Wang ,  Yu-Ku Lin

    Inventor： Hui-Ling Wang ,  Tong-Hua Kuan ,  Ying-Lang Wang ,  Yu-Ku Lin

    IPC: B24B100

    CPC classification number: B24B37/042

    Abstract: A method to prevent the accumulation of particle impurities on the surface of a semiconductor substrate that contains wolfram plugs during the process of polishing the surface of the wafer. The polishing sequence consists of three distinct polishing steps whereby the first two steps use hard polishing pads while the third step uses a soft polishing pad with the application of slurry during the third polish.

    Abstract translation: 一种在抛光晶片表面的过程中防止颗粒杂质在含有钨骨塞的半导体衬底表面积聚的方法。 抛光顺序由三个不同的抛光步骤组成，其中前两个步骤使用硬抛光垫，而第三步在第三次抛光期间使用软抛光垫施加浆料。

    Sensing product and method of making
    37.
    发明授权
    Sensing product and method of making 有权
    感知产品和制作方法

    公开(公告)号：US09419155B2

    公开(公告)日：2016-08-16

    申请号：US13343922

    申请日：2012-01-05

    Applicant: Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

    Inventor： Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

    IPC: H01L31/0232 ,  H01L31/101 ,  H01L31/18

    CPC classification number: H01L31/0232 ,  H01L31/02327 ,  H01L31/101 ,  H01L31/18

    Abstract: This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm.

    Abstract translation: 该描述涉及使用具有多个外延层的基板形成的感测产品。 至少第一外延层具有与第二外延层的组成不同的组成。 感测产品可选地包括第二外延层中的至少一个辐射感测元件以及可选地在第二外延层上的互连结构。 通过去除衬底和除第二外延层之外的所有外延层形成传感产物。 第二外延层的光入射表面具有小于约0.15μm的总厚度变化。

    METHOD OF FORMING DIAMOND CONDITIONERS FOR CMP PROCESS
    38.
    发明申请
    METHOD OF FORMING DIAMOND CONDITIONERS FOR CMP PROCESS 有权
    形成CMP工艺的金刚石调节器的方法

    公开(公告)号：US20130288582A1

    公开(公告)日：2013-10-31

    申请号：US13455448

    申请日：2012-04-25

    Applicant: Yen-Chang CHAO ,  Kei-Wei CHEN ,  Ying-Lang WANG

    Inventor： Yen-Chang CHAO ,  Kei-Wei CHEN ,  Ying-Lang WANG

    IPC: B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

    CPC classification number: B24B53/12 ,  B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

    Abstract: A method for making a conditioner disk used in a chemical mechanical polishing (CMP) process comprises applying a first layer of at least one binder over a substrate; disposing a plurality of diamond particles on the first layer of the at least one first binder at the plurality of locations; and fixing the plurality of diamond particles to the substrate by heating the substrate to a raised temperature and then cooling the substrate. The plurality of diamond particles disposed over the substrate are configured to provide a working diamond ratio higher than 50% when the conditioner disk is used in a CMP process.

    Abstract translation: 用于制造在化学机械抛光（CMP）工艺中使用的调节盘的方法包括在衬底上施加至少一种粘合剂的第一层; 在所述多个位置处在所述至少一个第一粘合剂的所述第一层上设置多个金刚石颗粒; 以及通过将衬底加热到​​升高的温度然后冷却衬底，将多个金刚石颗粒固定到衬底上。 设置在基板上的多个金刚石颗粒被配置为当在CMP工艺中使用调节盘时，提供高于50％的工作金刚石比例。

    Method and Apparatus for Backside Illumination Sensor
    39.
    发明申请
    Method and Apparatus for Backside Illumination Sensor 有权
    背面照明传感器的方法和装置

    公开(公告)号：US20130228886A1

    公开(公告)日：2013-09-05

    申请号：US13409924

    申请日：2012-03-01

    Applicant: Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    Inventor： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Ying-Lang Wang

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: H01L27/1464 ,  H01L27/14687

    Abstract: Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

    Abstract translation: 公开了用于背面照明（BSI）图像传感器装置的方法和装置。 在包括感光二极管的基板上形成BSI传感器装置。 衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。 另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

    MODULAR GRINDING APPARATUSES AND METHODS FOR WAFER THINNING
    40.
    发明申请
    MODULAR GRINDING APPARATUSES AND METHODS FOR WAFER THINNING 有权
    模块化研磨设备及其减薄方法

    公开(公告)号：US20130210321A1

    公开(公告)日：2013-08-15

    申请号：US13370946

    申请日：2012-02-10

    Applicant: Chun-Ting KUO ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

    Inventor： Chun-Ting KUO ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

    IPC: H01L21/02 ,  B24B7/00

    CPC classification number: H01L21/304 ,  B24B37/00 ,  B24B37/042

    Abstract: Methods of thinning a plurality of semiconductor wafers and apparatuses for carrying out the same are disclosed. A grinding module within a set of grinding modules receives and grinds a semiconductor wafer. A polishing module receives the semiconductor wafer from the grinding module and polishes the wafer. The polishing module is configured to polish the semiconductor wafer in less time than the grinding module is configured to grind the corresponding wafer.

    Abstract translation: 公开了使多个半导体晶片变薄的方法及其实施方法。 一组研磨模块内的研磨模块接收并研磨半导体晶片。 抛光模块从研磨模块接收半导体晶片并抛光晶片。 抛光模块被配置为在比研磨模块构造成磨碎相应晶片的时间少的时间内抛光半导体晶片。

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