公开(公告)号：US11365478B2

公开(公告)日：2022-06-21

申请号：US16565516

申请日：2019-09-10

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

公开(公告)号：US11362222B2

公开(公告)日：2022-06-14

申请号：US17087924

申请日：2020-11-03

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Hannu Huotari

IPC: H01L31/0232 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  C23C14/06 ,  C23C16/455 ,  C23C16/30 ,  H01L31/18 ,  H01L33/00 ,  H01L33/58 ,  C23C16/22

Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

公开(公告)号：US20220119961A1

公开(公告)日：2022-04-21

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190249312A1

公开(公告)日：2019-08-15

申请号：US16390385

申请日：2019-04-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  H01L21/3213 ,  C23F1/12 ,  C09K13/00 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3065 ,  C09K13/08 ,  H01J37/32

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190242019A1

公开(公告)日：2019-08-08

申请号：US16390540

申请日：2019-04-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  C09K13/00 ,  H01L21/3065 ,  C23F1/12

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US10074541B2

公开(公告)日：2018-09-11

申请号：US15645059

申请日：2017-07-10

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/455 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

公开(公告)号：US20180163312A1

公开(公告)日：2018-06-14

申请号：US15835262

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  C09K13/00

CPC classification number: C23F4/02 ,  C09K13/00 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32135

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20180066360A1

公开(公告)日：2018-03-08

申请号：US15700247

申请日：2017-09-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

公开(公告)号：US20180061648A1

公开(公告)日：2018-03-01

申请号：US15645059

申请日：2017-07-10

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/34 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

公开(公告)号：US09704716B2

公开(公告)日：2017-07-11

申请号：US15231611

申请日：2016-08-08

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/34 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.