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    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS
    5.
    发明申请
    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS 审中-公开

    公开(公告)号：US20200071828A1

    公开(公告)日：2020-03-05

    申请号：US16677446

    申请日：2019-11-07

    Applicant: ASM IP Holding B.V.

    Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285 ,  C23C16/54

    Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.

    PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF METAL OXIDE THIN FILMS
    7.
    发明申请
    PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF METAL OXIDE THIN FILMS 审中-公开

    公开(公告)号：US20180350587A1

    公开(公告)日：2018-12-06

    申请号：US15971601

    申请日：2018-05-04

    Applicant: ASM IP Holding B.V.

    Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

    IPC: H01L21/02 ,  H01L21/311

    Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

    Method of making a resistive random access memory device
    8.
    发明授权
    Method of making a resistive random access memory device 有权
    制造电阻随机存取存储器件的方法

    公开(公告)号：US09472757B2

    公开(公告)日：2016-10-18

    申请号：US14334566

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00 ,  H01L21/02 ,  H01L39/24

    CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

    Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

    Silane and borane treatments for titanium carbide films
    9.
    发明授权
    Silane and borane treatments for titanium carbide films 有权
    用于碳化钛膜的硅烷和硼烷处理

    公开(公告)号：US09236247B2

    公开(公告)日：2016-01-12

    申请号：US14461995

    申请日：2014-08-18

    Applicant: ASM IP Holding B.V.

    Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

    IPC: H01L21/00 ,  H01L21/16 ,  H01L21/02 ,  H01L21/28

    CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

    Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or a borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

    Abstract translation: 提供了处理含金属薄膜的方法，例如包含碳化钛的薄膜，与硅烷或硼烷试剂。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

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