Abstract:
The present disclosure relates to glass articles for use as a touchscreen substrate for use in a portable electronic device, particularly comprising an alkali-free aluminosilicate glass exhibiting a high damage threshold of at least 1000gf, as measured by the lack of the presence of median/radial cracks when a load is applied to the glass using a Vickers indenter, a scratch resistance of at least 900gf, as measured by the lack of the presence of lateral cracks when a load is applied by a moving Knoop indenter and a linear coefficient of thermal expansion (CTE) over the temperature range 0-300° C. which satisfies the relationship: 25×10−7/° C.≦CTE≦40×10−7/° C.
Abstract:
The present disclosure relates to glass articles for use as a touchscreen substrate or cover glass article for use in a portable electronic device, particularly an aluminoborosilicate glass being substantially free of alkalis, comprising at least 55 mol % SiO2, at least 5 mol % Al2O3 and at least one alkaline earth RO component. The alkali-free aluminoborosilicate exhibits an Al2O3+B2O3 to RO mol % ratio which exceeds 1 and an Al2O3 to RO mol % ratio which exceeds 0.65. The aluminoborosilicate glasses disclosed herein exhibits high damage resistance as evidenced by a Vickers median/radial crack initiation load which is greater than than 1000 gf, as well as a high scratch resistance of at least 900 gf, as measured by the lack of the presence of lateral cracks when a load is applied by a moving Knoop indenter.
Abstract translation:本公开涉及用作便携式电子设备中使用的触摸屏基板或盖玻璃制品的玻璃制品,特别是基本上不含碱的铝硼硅酸盐玻璃,其包含至少55摩尔%的SiO 2,至少5摩尔%的Al 2 O 3和 至少一种碱土金属RO组分。 无碱铝硼硅酸盐的Al 2 O 3 + B 2 O 3与RO摩尔%比超过1,Al 2 O 3与RO摩尔%比超过0.65。 本文公开的铝硼硅酸盐玻璃表现出高的耐损伤性,如通过维氏中值/径向裂纹起始载荷大于1000gf以及高至少900gf的高耐刮擦性所证明的,如通过不存在 通过运动的Knoop压头施加负载时的横向裂纹。
Abstract:
Disclosed are alkali-free glasses having a liquidus viscosity of greater than or equal to about 90,000 poises, said glass comprising SiO2, Al2O3, B2O3, MgO, CaO, and SrO such that, in mole percent on an oxide basis: 64≦SiO2≦68.2; 11≦Al2O3≦13.5; 5≦B2O3≦9; 2≦MgO≦9; 3≦CaO≦9; and 1≦SrO≦5. The glasses can be used to make a display glass substrates, such as thin film transistor (TFT) display glass substrates for use in active matrix liquid crystal display devices (AMLCDs) and other flat panel display devices.
Abstract translation:公开了具有大于或等于约90,000泊的液相线粘度的无碱玻璃,所述玻璃包含SiO 2,Al 2 O 3,B 2 O 3,MgO,CaO和SrO,使得以氧化物为基准的摩尔百分数:64 <= SiO 2 <= 68.2; 11 <= Al 2 O 3 <= 13.5; 5 <= B2O3 <= 9; 2 <= MgO <= 9; 3 <= CaO <= 9; 和1 <= SrO <= 5。 玻璃可用于制造用于有源矩阵液晶显示装置(AMLCD)和其它平板显示装置的薄膜晶体管(TFT)显示玻璃基板的显示玻璃基板。
Abstract:
Provided herein are nanoparticulate coated structures and methods of making structures. The structures comprise a support element, a nanoparticulate layer, and a binder disposed on the support element, wherein the binder comprises an alkali silicate or borate. In addition, methods of making the structures and uses of the described structures are described herein.
Abstract:
A process for making glass sheet with low compaction suitable for high temperature applications, such as low-temperature polysilicon-based TFT displays, and glass sheets thus made. The glass sheet desirably has an anneal point of at least 765° C., a CTE at most 42×10−7/° C. The process involves cooling the glass melt form a temperature corresponding to a viscosity of 1.0×1010 poise to a temperature corresponding to a viscosity of 1.0×1015 poise at a cooling rate CR, where CR≧5° C./second. The absolute value of the measured compaction of the glass sheet desirably is at most 175 ppm upon being re-heated to 675° C. for a period of time.
Abstract:
A method of making a strengthened glass article. The method includes altering the glass structure and subsequently creating a compressive layer extending from the surface of the glass to a depth of layer. In some embodiments, the structure is altered by heat treating the glass at a temperature that is less than the annealing point of the glass, and the compressive layer is formed by ion exchange. A strengthened glass article made by the method is also provided.
Abstract:
Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.
Abstract:
Described herein are alkali-free, boroalumino silicate glasses exhibiting desirable physical and chemical properties for use as substrates in flat panel display devices, such as, active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diode displays (AMOLEDs). In accordance with certain of its aspects, the glasses possess good dimensional stability as a function of temperature.
Abstract:
Opal glass compositions and devices incorporating opal glass compositions are described herein. The compositions solve problems associated with the use of opal glasses as light-scattering layers in electroluminescent devices, such as organic light-emitting diodes. In particular, embodiments solve the problem of high light absorption within the opal glass layer as well as the problem of an insufficiently high refractive index that results in poor light collection by the layer. Particular devices comprise light-emitting diodes incorporating light scattering layers formed of high-index opal glasses of high light scattering power that exhibit minimal light attenuation through light absorption within the matrix phases of the glasses.
Abstract:
A rare-earth-containing glass material having a composition, expressed in mole percentages on and oxide basis, comprising: SiO2: 66-75 Al2O3: 11-17 B2O3: 0-4 MgO: 1-6.5 CaO: 2-7 SrO: 0-4 BaO: 0-4 Y2O3: 0-4 La2O3: 0-4 Y2O3+La2O3: 0.1-4. The inclusion of Y2O3 and/or La2O3 in the composition reduces the T2.3 of the glass thereby allowing higher annealing-point glasses to be produced. The glass is particularly useful for low-temperature polycrystalline silicon-based semiconductor devices.
Abstract translation:含有以摩尔百分数表示的氧化物组成的含稀土玻璃材料包括:SiO 2 :66-75 Al 2 O 3:11-17 B 2 O 3:0-4 MgO:1-6.5 CaO:2-7 SrO: 0-4 BaO:0-4 Y2O3:0-4 La2O3:0-4 Y2O3 + La2O3:0.1-4。 在组合物中包含Y 2 O 3和/或La 2 O 3减少了玻璃的T2.3,从而允许产生更高的退火点玻璃。 该玻璃对于低温多晶硅基半导体器件特别有用。