公开(公告)号：US11031262B2

公开(公告)日：2021-06-08

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20210130949A1

公开(公告)日：2021-05-06

申请号：US17081488

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Byung Ik Song ,  Hyung Je Woo ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: C23C16/44 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

公开(公告)号：US10734232B2

公开(公告)日：2020-08-04

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Jiarui Wang ,  Kwangduk Douglas Lee ,  Milind Gadre ,  Xiaoquan Min ,  Paul Connors

IPC: H01L21/225 ,  G03F1/38 ,  H01L21/033 ,  C23C16/42 ,  C23C16/24 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/768

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

公开(公告)号：US10418243B2

公开(公告)日：2019-09-17

申请号：US15233351

申请日：2016-08-10

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US10403515B2

公开(公告)日：2019-09-03

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10373822B2

公开(公告)日：2019-08-06

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US09390910B2

公开(公告)日：2016-07-12

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/443 ,  H01L21/02 ,  H01L21/66 ,  H01L21/033 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。

公开(公告)号：US20250140537A1

公开(公告)日：2025-05-01

申请号：US18538100

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Zaoyuan Ge ,  Manjunath Veerappa Chobari Patil ,  Pavan Kumar S M ,  Dinesh Babu ,  Nuo Wang ,  Kaili Yu ,  Xinyi Zhong ,  Bharati Neelamraju ,  Liangfa Hu ,  Neela Ayalasomayajula ,  Sungwon Ha ,  Prashant Kumar Kulshreshtha ,  Amit Bansal ,  Daemian Raj Benjamin Raj ,  Badri N. Ramamurthi ,  Travis Mazzy ,  Mohammed Salman Mohiuddin ,  Karthik Suresh Menon ,  Lihua Wu ,  Prasath Poomani

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/00

Abstract: Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

公开(公告)号：US12211728B2

公开(公告)日：2025-01-28

申请号：US18201086

申请日：2023-05-23

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Venkata Sharat Chandra Parimi ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687

Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

公开(公告)号：US12211694B2

公开(公告)日：2025-01-28

申请号：US18206514

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/033 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.