公开(公告)号：US10971390B2

公开(公告)日：2021-04-06

申请号：US16437048

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Liangfa Hu ,  Sudha S. Rathi ,  Ganesh Balasubramanian

IPC: H01L21/687 ,  H01L21/67

Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

公开(公告)号：US20230390811A1

公开(公告)日：2023-12-07

申请号：US17833408

申请日：2022-06-06

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Truong Van Nguyen ,  Kelvin Chan ,  Diwakar Kedlaya ,  Anantha K. Subramani ,  Abdul Aziz Khaja ,  Vijet Patil ,  Yusheng Fang ,  Liangfa Hu ,  Prashant Kumar Kulshreshtha

IPC: B08B7/00 ,  H01J37/32 ,  B08B5/00 ,  B08B9/032

CPC classification number: B08B7/0035 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32862 ,  B08B5/00 ,  B08B9/0328 ,  H01J2237/334 ,  H01J2237/332 ,  B08B2209/032

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

公开(公告)号：US11515150B2

公开(公告)日：2022-11-29

申请号：US17077926

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/311

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

公开(公告)号：US20220130665A1

公开(公告)日：2022-04-28

申请号：US17077926

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/26

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

公开(公告)号：US20250140537A1

公开(公告)日：2025-05-01

申请号：US18538100

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Zaoyuan Ge ,  Manjunath Veerappa Chobari Patil ,  Pavan Kumar S M ,  Dinesh Babu ,  Nuo Wang ,  Kaili Yu ,  Xinyi Zhong ,  Bharati Neelamraju ,  Liangfa Hu ,  Neela Ayalasomayajula ,  Sungwon Ha ,  Prashant Kumar Kulshreshtha ,  Amit Bansal ,  Daemian Raj Benjamin Raj ,  Badri N. Ramamurthi ,  Travis Mazzy ,  Mohammed Salman Mohiuddin ,  Karthik Suresh Menon ,  Lihua Wu ,  Prasath Poomani

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/00

Abstract: Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

公开(公告)号：US11756819B2

公开(公告)日：2023-09-12

申请号：US16855206

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Liangfa Hu ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Yoichi Suzuki

IPC: H01L21/683 ,  H01L21/26 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/26 ,  H01L21/68735

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

公开(公告)号：US11560623B2

公开(公告)日：2023-01-24

申请号：US16857755

申请日：2020-04-24

Applicant: Applied Materials, Inc.

Inventor： Liangfa Hu ,  Prashant Kumar Kulshreshtha ,  Anjana M. Patel ,  Abdul Aziz Khaja ,  Viren Kalsekar ,  Vinay K. Prabhakar ,  Satya Teja Babu Thokachichu ,  Byung Seok Kwon ,  Ratsamee Limdulpaiboon ,  Kwangduk Douglas Lee ,  Ganesh Balasubramanian

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/44

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.