公开(公告)号：US09939723B2

公开(公告)日：2018-04-10

申请号：US15122453

申请日：2015-02-24

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Osamu Nozawa ,  Takashi Uchida

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/308

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/3081 ,  H01L21/3086

Abstract: A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

公开(公告)号：US09625806B2

公开(公告)日：2017-04-18

申请号：US14760911

申请日：2014-01-14

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Kazuya Sakai

IPC: G03F1/26 ,  G03F1/32 ,  G03F1/54

CPC classification number: G03F1/32 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2006 ,  H01L21/0275

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US09612527B2

公开(公告)日：2017-04-04

申请号：US14690875

申请日：2015-04-20

Applicant: HOYA CORPORATION

Inventor： Atsushi Kominato ,  Masahiro Hashimoto ,  Osamu Nozawa

IPC: G03F1/26 ,  G03F1/32 ,  G03F1/50 ,  G03F1/58 ,  H01L21/266 ,  H01L21/268 ,  G03F1/00 ,  G03F7/20 ,  H01L21/311

CPC classification number: G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

公开(公告)号：US09256122B2

公开(公告)日：2016-02-09

申请号：US13920128

申请日：2013-06-18

Applicant: HOYA CORPORATION

Inventor： Atsushi Kominato ,  Masahiro Hashimoto ,  Osamu Nozawa

IPC: G03F1/50 ,  G03F1/58 ,  H01L21/266 ,  H01L21/268 ,  G03F1/00 ,  G03F7/20

CPC classification number: G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

公开(公告)号：US09140980B2

公开(公告)日：2015-09-22

申请号：US13955831

申请日：2013-07-31

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Toshiyuki Suzuki

IPC: G03F1/80 ,  G03F1/54 ,  G03F1/58

CPC classification number: G03F1/80 ,  G03F1/50 ,  G03F1/54 ,  G03F1/58

Abstract: In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.

Abstract translation: 在用于制造转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。 遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层。 高氧化层位于与透明基板侧相反的一侧。

公开(公告)号：US09075315B2

公开(公告)日：2015-07-07

申请号：US13628790

申请日：2012-09-27

Applicant: HOYA CORPORATION

Inventor： Kazuya Sakai ,  Ryo Ohkubo ,  Osamu Nozawa ,  Toshiyuki Suzuki

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/58

CPC classification number: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Abstract translation: 本发明是用于制造反射掩模的反射掩模坯料，其在基板上依次具有多层反射膜，吸收膜和蚀刻掩模膜的层叠结构，其中蚀刻掩模膜包括含有 铬，吸收膜包含含有钽的材料，在与基板相反的一侧的吸收膜的表面层上形成高度氧化层，并且通过X射线分析时形成高度氧化层的Ta 4f窄谱 光电子能谱具有超过23eV的结合能的最大峰值。

公开(公告)号：US08580466B1

公开(公告)日：2013-11-12

申请号：US13917338

申请日：2013-06-13

Applicant: Hoya Corporation

Inventor： Yuki Shiota ,  Osamu Nozawa

IPC: G03F1/00 ,  G03C5/00

CPC classification number: G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F1/54

Abstract: A photomask blank includes a transparent substrate and a film containing at lease two layers formed on the transparent substrate, the two layers being a first layer with a phase difference Δθ1 and a second layer with a phase difference Δθ2. The phase difference Δθ1 is a phase difference between a light transmitted through the first layer and a light transmitted through an air distance equal to a thickness of the first layer, and the phase difference Δθ2 is a phase difference between a light transmitted through the second layer and a light transmitted through an air distance equal to a thickness of the second layer. A phase difference of the film containing at least two layers is from −30° to +30°. The first layer contains a material not to be etched during etching of the transparent substrate.

Abstract translation: 光掩模坯料包括透明基板和形成在透明基板上的至少两层的膜，两层是具有相位差Deltatheta1的第一层和具有相位差Deltatheta2的第二层。 相位差Deltatheta1是透过第一层的光和透过等于第一层的厚度的空气距离的光之间的相位差，相位差Deltatheta2是透过第二层的光之间的相位差 透过空气距离等于第二层厚度的光。 含有至少两层的膜的相位差为-30°〜+ 30°。 第一层包含在蚀刻透明衬底期间不被蚀刻的材料。

公开(公告)号：US12007684B2

公开(公告)日：2024-06-11

申请号：US18226165

申请日：2023-07-25

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Ryo Ohkubo ,  Hiroaki Shishido

IPC: G03F1/24 ,  H01L21/033

CPC classification number: G03F1/24 ,  H01L21/0332 ,  H01L21/0337

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US11281089B2

公开(公告)日：2022-03-22

申请号：US16488901

申请日：2018-01-24

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Ryo Ohkubo ,  Hiroaki Shishido

IPC: G03F1/24 ,  H01L21/033

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US10942442B2

公开(公告)日：2021-03-09

申请号：US16671065

申请日：2019-10-31

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Kazuya Sakai

IPC: G03F1/32 ,  G03F1/26 ,  G03F7/20 ,  G03F1/54

Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.