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    CAVITY STRUCTURES FOR MEMS DEVICES
    32.
    发明申请
    CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
    MEMS器件的CAVITY结构

    公开(公告)号：US20150353344A1

    公开(公告)日：2015-12-10

    申请号：US14832426

    申请日：2015-08-21

    Applicant: Infineon Technologies AG

    Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

    Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.

    Abstract translation: 实施例涉及用于制造MEMS器件的MEMS器件和方法。 在一个实施例中，制造包括在绝缘体上非绝缘体（非SOI）衬底上形成单晶牺牲层，图案化单晶牺牲层，使得单晶牺牲层保持在第一部分中并在第二部分中被去除 部分横向于第一部分; 沉积第一硅层，所述第一硅层沉积在剩余的单晶牺牲层上，并且进一步横向于所述第一部分; 通过所述第一硅层中的至少一个释放孔去除所述单晶牺牲层的至少一部分，以形成空腔并密封所述空腔。

    Methods for producing a cavity within a semiconductor substrate
    33.
    发明授权
    Methods for producing a cavity within a semiconductor substrate 有权
    用于在半导体衬底内产生空腔的方法

    公开(公告)号：US09139427B2

    公开(公告)日：2015-09-22

    申请号：US13864762

    申请日：2013-04-17

    Applicant: Infineon Technologies AG

    Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

    IPC: H01L21/311 ,  B81C1/00 ,  B81B3/00 ,  H01L21/3063

    CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

    Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

    Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。

    CAVITY STRUCTURES FOR MEMS DEVICES
    35.
    发明申请
    CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
    MEMS器件的CAVITY结构

    公开(公告)号：US20140252422A1

    公开(公告)日：2014-09-11

    申请号：US14281251

    申请日：2014-05-19

    Applicant: Infineon Technologies AG

    Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

    Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

    Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

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