中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.011 seconds)

    CAVITY STRUCTURES FOR MEMS DEVICES
    1.
    发明申请
    CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
    MEMS器件的CAVITY结构

    公开(公告)号：US20150353344A1

    公开(公告)日：2015-12-10

    申请号：US14832426

    申请日：2015-08-21

    Applicant: Infineon Technologies AG

    Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

    Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.

    Abstract translation: 实施例涉及用于制造MEMS器件的MEMS器件和方法。 在一个实施例中，制造包括在绝缘体上非绝缘体（非SOI）衬底上形成单晶牺牲层，图案化单晶牺牲层，使得单晶牺牲层保持在第一部分中并在第二部分中被去除 部分横向于第一部分; 沉积第一硅层，所述第一硅层沉积在剩余的单晶牺牲层上，并且进一步横向于所述第一部分; 通过所述第一硅层中的至少一个释放孔去除所述单晶牺牲层的至少一部分，以形成空腔并密封所述空腔。

    CAVITY STRUCTURES FOR MEMS DEVICES
    2.
    发明申请
    CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
    MEMS器件的CAVITY结构

    公开(公告)号：US20140252422A1

    公开(公告)日：2014-09-11

    申请号：US14281251

    申请日：2014-05-19

    Applicant: Infineon Technologies AG

    Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

    Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

    Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

    Cavity structures for MEMS devices
    4.
    发明授权
    Cavity structures for MEMS devices 有权
    MEMS器件的腔结构

    公开(公告)号：US09145292B2

    公开(公告)日：2015-09-29

    申请号：US14281251

    申请日：2014-05-19

    Applicant: Infineon Technologies AG

    Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

    IPC: H01L21/71 ,  H01L21/205 ,  H01L27/04 ,  H01L27/20 ,  B81B7/02 ,  B81B7/00 ,  B81C1/00 ,  H01L27/06

    CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

    Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

    Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

Patent Agency Ranking