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公开(公告)号:US11411047B2
公开(公告)日:2022-08-09
申请号:US16128422
申请日:2018-09-11
Applicant: Intel Corporation
Inventor: Sasikanth Manipatruni , Christopher Wiegand , Tanay Gosavi , Ian Young
Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., a magnetic tunneling junction or spin valve). The apparatus further includes a structure (e.g., an interconnect) comprising spin orbit material, the structure adjacent to the magnetic junction; first and second transistors. The first transistor is coupled to a bit-line and a first word-line, wherein the first transistor is adjacent to the magnetic junction. The second transistor is coupled to a first select-line and a second word-line, wherein the second transistor is adjacent to the structure, wherein the interconnect is coupled to a second select-line, and wherein the magnetic junction is between the first and second transistors.
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公开(公告)号:US11367749B2
公开(公告)日:2022-06-21
申请号:US16022564
申请日:2018-06-28
Applicant: Intel Corporation
Inventor: Noriyuki Sato , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Kevin O'Brien , Tofizur Rahman , Gary Allen , Atm G. Sarwar , Ian Young , Hui Jae Yoo , Christopher Wiegand , Benjamin Buford
Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.
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公开(公告)号:US11264558B2
公开(公告)日:2022-03-01
申请号:US16128426
申请日:2018-09-11
Applicant: Intel Corporation
Inventor: Sasikanth Manipatruni , Kaan Oguz , Chia-Ching Lin , Christopher Wiegand , Tanay Gosavi , Ian Young
Abstract: An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.
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公开(公告)号:US11251365B2
公开(公告)日:2022-02-15
申请号:US15942231
申请日:2018-03-30
Applicant: Intel Corporation
Inventor: Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Ian Young , Kevin O'Brien , Gary Allen , Noriyuki Sato
Abstract: An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.
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公开(公告)号:US11151046B2
公开(公告)日:2021-10-19
申请号:US16921685
申请日:2020-07-06
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young , Abhishek Sharma
Abstract: The present disclosure is directed to systems and methods of implementing a neural network using in-memory mathematical operations performed by pipelined SRAM architecture (PISA) circuitry disposed in on-chip processor memory circuitry. A high-level compiler may be provided to compile data representative of a multi-layer neural network model and one or more neural network data inputs from a first high-level programming language to an intermediate domain-specific language (DSL). A low-level compiler may be provided to compile the representative data from the intermediate DSL to multiple instruction sets in accordance with an instruction set architecture (ISA), such that each of the multiple instruction sets corresponds to a single respective layer of the multi-layer neural network model. Each of the multiple instruction sets may be assigned to a respective SRAM array of the PISA circuitry for in-memory execution. Thus, the systems and methods described herein beneficially leverage the on-chip processor memory circuitry to perform a relatively large number of in-memory vector/tensor calculations in furtherance of neural network processing without burdening the processor circuitry.
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公开(公告)号:US11062752B2
公开(公告)日:2021-07-13
申请号:US16246358
申请日:2019-01-11
Applicant: Intel Corporation
Inventor: Tofizur Rahman , James Pellegren , Angeline Smith , Christopher Wiegand , Noriyuki Sato , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Kevin O'Brien , Benjamin Buford , Ian Young
Abstract: A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.
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公开(公告)号:US11038099B2
公开(公告)日:2021-06-15
申请号:US16349575
申请日:2016-12-13
Applicant: Intel Corporation
Inventor: Sasikanth Manipatruni , Dmitri E. Nikonov , Ian A. Young
Abstract: An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Bychkov effect; a second magnet with PMA; a magnetoelectric layer adjacent to the second magnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.
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公开(公告)号:US10860682B2
公开(公告)日:2020-12-08
申请号:US16839013
申请日:2020-04-02
Applicant: Intel Corporation
Inventor: Phil Knag , Gregory K. Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram Krishnamurthy , Ian A. Young
IPC: G06F17/16 , G11C11/419 , G11C11/418 , G11C7/12 , G11C8/08 , G06G7/16 , G06G7/22 , G11C11/56 , G06F9/30 , G11C7/10 , G06N3/063
Abstract: A binary CIM circuit enables all memory cells in a memory array to be effectively accessible simultaneously for computation using fixed pulse widths on the wordlines and equal capacitance on the bitlines. The fixed pulse widths and equal capacitance ensure that a minimum voltage drop in the bitline represents one least significant bit (LSB) so that the bitline voltage swing remains safely within the maximum allowable range. The binary CIM circuit maximizes the effective memory bandwidth of a memory array for a given maximum voltage range of bitline voltage.
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公开(公告)号:US20200334161A1
公开(公告)日:2020-10-22
申请号:US16921685
申请日:2020-07-06
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , IAN YOUNG , Abhishek Sharma
Abstract: The present disclosure is directed to systems and methods of implementing a neural network using in-memory mathematical operations performed by pipelined SRAM architecture (PISA) circuitry disposed in on-chip processor memory circuitry. A high-level compiler may be provided to compile data representative of a multi-layer neural network model and one or more neural network data inputs from a first high-level programming language to an intermediate domain-specific language (DSL). A low-level compiler may be provided to compile the representative data from the intermediate DSL to multiple instruction sets in accordance with an instruction set architecture (ISA), such that each of the multiple instruction sets corresponds to a single respective layer of the multi-layer neural network model. Each of the multiple instruction sets may be assigned to a respective SRAM array of the PISA circuitry for in-memory execution. Thus, the systems and methods described herein beneficially leverage the on-chip processor memory circuitry to perform a relatively large number of in-memory vector/tensor calculations in furtherance of neural network processing without burdening the processor circuitry.
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40.
公开(公告)号:US20200279805A1
公开(公告)日:2020-09-03
申请号:US16647691
申请日:2017-11-03
Applicant: INTEL CORPORATION
Inventor: Sasikanth Manipatruni , Jasmeet S. Chawla , Chia-Ching Lin , Dmitri E. Nikonov , Ian A. Young , Robert L. Bristol
IPC: H01L23/522 , H01L23/528 , H01L27/22 , H01L21/768 , H01L43/02 , H01F10/32
Abstract: Techniques are disclosed for forming vias for integrated circuit structures. During an additive via formation process, a dielectric material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is desired to have vias, openings are etched in the dielectric material through the removed regions, and the openings are filled with a first via material. This is then repeated for a second via material. During the subtractive via formation process, a first via material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is not desired to have vias, openings are etched in the first via material through the removed regions. This is then repeated for a second via material.
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