Abstract:
The present invention has an object to provide a nuclear magnetic resonance imaging apparatus or the like that avoids a region with zero sensitivity of an optical magnetometer and allows imaging by strong magnetic resonance when a common magnetic field is used as a bias field of an optical magnetometer and as a magnetostatic field to be applied to a sample. When a direction of a magnetostatic field application unit applying a magnetostatic field to a sample is a z direction, alkali metal cells of a plurality of scalar magnetometers are arranged so as not to overlap a region to be imaged in a z direction, and so as not to intersect the region to be imaged in an in-plane direction perpendicular to the z direction.
Abstract:
An atomic magnetometer includes a cell containing an atomic group, a pump light source, a probe light source, a mirror, and a detector. The cell is disposed between the pump light source and the mirror and between the probe light source and the detector. A pump beam emitted from the pump light source is circularly polarized light. The pump beam passes through the cell and is reflected by the mirror and then passes through the cell again. The probe beam emitted from the probe light source is linearly polarized light. An optical path of the probe beam is parallel to the plane of incidence of the pump beam and is also parallel to the surface of the mirror. The optical path of the probe beam crosses the optical path of the pump beam in the cell. The probe beam which has passed through the cell enters the detector.
Abstract:
A polarization gain medium such as an emitting laser diode provides the optical pumping. An atomic vapor cell is positioned in the laser cavity providing spontaneous push-pull optical pumping inside the laser cavity. This causes the laser beam to be modulated at hyperfine-resonance frequency. A clock signal is obtained from electrical modulation across the laser diode.
Abstract:
This invention provides a film forming composition for nanoimprinting, which has excellent resistance to etching with oxygen gas, can prevent the separation of a transfer pattern, can eliminate a problem of a holing time on a substrate, and is also excellent in transferability, and photosensitive resist, a nanostructure, a method for pattern formation using the same, and a program for realizing the method for pattern formation. The film forming composition for nanoimprinting comprises a polymeric silicon compound having the function of causing a photocuring reaction. Preferably, the polymeric silicon compound has a functional group cleavable as a result of response to electromagnetic waves and causes a curing reaction upon exposure to electromagnetic waves. More preferred are siloxane polymer compounds, silicon carbide polymer compounds, polysilane polymer compounds, and silazane polymer compounds, or any mixture thereof.
Abstract:
An atomic magnetometer includes a cell containing an atomic group, a pump light source, a probe light source, a mirror, and a detector. The cell is disposed between the pump light source and the mirror and between the probe light source and the detector. A pump beam emitted from the pump light source is circularly polarized light. The pump beam passes through the cell and is reflected by the mirror and then passes through the cell again. The probe beam emitted from the probe light source is linearly polarized light. An optical path of the probe beam is parallel to a plane of incidence of the pump beam and is also parallel to a surface of the mirror. The optical path of the probe beam crosses an optical path of the pump beam in the cell. The probe beam which has passed through the cell enters the detector.
Abstract:
A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).
Abstract:
To provide a printed wiring board where the impedance between pads through which differential signals pass has been set to a predetermined standard value. The printed wiring board includes a first conductor layer extending over an area excluding a hole formed for each pad group and filled with a dielectric, and a second conductor layer extending over an area containing areas facing the hole. The hole encompasses a plurality of areas facing predetermined respective pads which are adjacent to each other and which form the pad group from among the plurality of pads.
Abstract:
The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (al) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (al) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)
Abstract:
The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
Abstract:
Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.