Breakout structure for an integrated circuit device

    公开(公告)号:US11812544B2

    公开(公告)日:2023-11-07

    申请号:US17557877

    申请日:2021-12-21

    Applicant: XILINX, INC.

    Abstract: Apparatus having at least one breakout structure are provided. In one example, an apparatus includes a dielectric layer, first and second contact pads, and first and second vias. The first and second contact pads are disposed on the dielectric layer. The first via is disposed through the dielectric layer and coupled to the first contact pad. The first via is offset from the first contact pad in a first direction. The second contact pad is immediately adjacent the first via. The second via is disposed through the dielectric layer immediately adjacent the first contact pad and coupled to the second contact pad. The second via is offset from the second contact pad in a second direction that is opposite of the first direction. The first and the second contact pads define a first differential pair of contact pads that is configured to transmit a first differential pair of signals.

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