公开(公告)号：US09899360B2

公开(公告)日：2018-02-20

申请号：US14943103

申请日：2015-11-17

Applicant: ROHM CO., LTD.

Inventor： Isamu Nishimura

IPC: H01L25/18 ,  H01L23/552 ,  H01L23/66 ,  H01L25/065 ,  H01L23/498 ,  H01L23/24 ,  H01L23/31 ,  H01L23/13 ,  H01L23/14

CPC classification number: H01L25/18 ,  H01L23/13 ,  H01L23/147 ,  H01L23/24 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/552 ,  H01L23/66 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/15156 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate, a conducting portion, and a sealing resin. The substrate has a main surface and is formed with a recessed portion in the main surface. The conducting portion is formed on the substrate. The sealing resin is disposed in the recessed portion. The conducting portion includes a first wiring layer and a second wiring layer both formed in the recessed portion. The second wiring layer is closer to the main surface than is the first wiring layer in the normal direction of the main surface.

公开(公告)号：US09697948B2

公开(公告)日：2017-07-04

申请号：US14537234

申请日：2014-11-10

Applicant: ROHM CO., LTD.

Inventor： Kosei Osada ,  Isamu Nishimura ,  Tetsuya Kagawa ,  Daiki Yanagishima ,  Toshiyuki Ishikawa ,  Michihiko Mifuji ,  Satoshi Kageyama ,  Nobuyuki Kasahara

IPC: H01L23/522 ,  H01F27/28 ,  H01L23/64 ,  H01L23/58 ,  H01L23/495 ,  H01L23/31

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US09585254B2

公开(公告)日：2017-02-28

申请号：US15015870

申请日：2016-02-04

Applicant: ROHM CO., LTD.

Inventor： Isamu Nishimura ,  Hideaki Yanagida ,  Michihiko Mifuji ,  Yasuhiro Fuwa

IPC: H05K1/16 ,  H05K1/18 ,  H05K1/11

CPC classification number: H05K1/183 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/15156 ,  H01L2924/181 ,  H05K1/0306 ,  H05K1/111 ,  H05K1/112 ,  H05K1/186 ,  H05K2201/0162 ,  H05K2201/0376 ,  H05K2201/09036 ,  H01L2924/00012

Abstract: An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

Abstract translation: 电子设备包括半导体衬底，安装在衬底上的电子元件，与电子元件电连接的导电层，密封树脂和柱状导体。 基板具有在其正面形成的凹部。 电子元件安装在凹槽的底面上。 导电层具有位于基板的正面上的正面接触区域。 密封树脂设置在用于覆盖基板的正面的至少一部分的凹部的至少一部分中。 柱状导体与导电层的正面接触区域电连接，并且在密封树脂的与基板的正面相反的一侧露出。