公开(公告)号：US20080003719A1

公开(公告)日：2008-01-03

申请号：US11479740

申请日：2006-06-30

Applicant: Daoqiang Lu ,  Rajashree Baskaran ,  Chuan Hu

Inventor： Daoqiang Lu ,  Rajashree Baskaran ,  Chuan Hu

IPC: H01L21/00

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L21/6835 ,  H01L23/42 ,  H01L24/27 ,  H01L2221/68309 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/351 ,  H01L2924/00

Abstract: An embodiment of the present invention is a technique to fabricate a package. A heat spreader (HS) array on a HS support substrate is formed. The HS array has a plurality of heat spreaders. A diced wafer supported by a wafer support substrate (WSS) is formed. The diced wafer has a plurality of thin dice. The thin dice in the diced wafer are bonded to the heat spreaders in the HS array to form HS-bonded thin dice between the HS support substrate and the WSS.

Abstract translation: 本发明的一个实施例是一种制造包装的技术。 形成HS支撑基板上的散热器（HS）阵列。 HS阵列具有多个散热器。 形成由晶片支撑基板（WSS）支撑的切割晶片。 切割晶片具有多个薄骰子。 切割晶片中的薄骰子结合到HS阵列中的散热器上，以在HS支撑衬底和WSS之间形成HS结合的薄骰子。

公开(公告)号：US09835648B2

公开(公告)日：2017-12-05

申请号：US13173933

申请日：2011-06-30

Applicant: Rajashree Baskaran ,  Kimin Jun ,  Ting Zhong ,  Roy E. Swart ,  Paul B. Fischer

Inventor： Rajashree Baskaran ,  Kimin Jun ,  Ting Zhong ,  Roy E. Swart ,  Paul B. Fischer

IPC: G01R31/28 ,  G01R1/04 ,  H01R3/08 ,  G01R1/067

CPC classification number: G01R1/0416 ,  G01R1/06783 ,  H01R3/08 ,  Y10T29/49204

Abstract: Embodiments of the invention provide methods for forming electrical connections using liquid metals. Electrical connections that employ liquid metals are useful for testing and validation of semiconductor devices. Electrical connections are formed between the probes of a testing interface and the electronic interface of a device under test through a liquid metal region. In embodiments of the invention, liquid metal interconnects are comprised of gallium or liquid metal alloys of gallium. The use of liquid metal contacts does not require a predetermined amount of force be applied in order to reliably make an electrical connection.

公开(公告)号：US09646972B2

公开(公告)日：2017-05-09

申请号：US14912402

申请日：2013-09-25

Applicant: Rajashree Baskaran ,  Kimin Jun ,  Patrick Morrow

Inventor： Rajashree Baskaran ,  Kimin Jun ,  Patrick Morrow

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/06

CPC classification number: H01L27/10832 ,  H01L21/84 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/10861 ,  H01L27/10867 ,  H01L27/1087 ,  H01L28/20 ,  H01L28/87 ,  H01L28/91 ,  H01L29/945

Abstract: Methods of forming passive elements under a device layer are described. Those methods and structures may include forming at least one passive structure, such as a capacitor and a resistor structure, in a substrate, wherein the passive structures are vertically disposed within the substrate. An insulator layer is formed on a top surface of the passive structure, a device layer is formed on the insulator layer, and a contact is formed to couple a device disposed in the device layer to the at least one passive structure.

公开(公告)号：US09508675B2

公开(公告)日：2016-11-29

申请号：US13973975

申请日：2013-08-22

Applicant: Daoqiang Lu ,  Chuan Hu ,  Gilroy J. Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery M. Dubin

Inventor： Daoqiang Lu ,  Chuan Hu ,  Gilroy J. Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery M. Dubin

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/373 ,  H01L21/00

CPC classification number: H01L24/83 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/18161 ,  H01L2924/19106 ,  H01L2924/00

Abstract: A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.

公开(公告)号：US20140264643A1

公开(公告)日：2014-09-18

申请号：US13798600

申请日：2013-03-13

Applicant: Rajashree Baskaran

Inventor： Rajashree Baskaran

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2207/012 ,  B81C1/00015 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/035 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L23/315 ,  H01L2224/16 ,  H01L2924/00 ,  H01L2924/0002

Abstract: Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to a second substrate, wherein the second substrate comprises a device layer. The bonding may comprise a layer transfer process, wherein an integrated MEMS device is formed.

Abstract translation: 描述了形成集成MEMS结构的方法。 这些方法和结构可以包括在第一衬底上形成至少一个MEMS结构，在第一衬底的顶表面上形成第一结合层，然后将设置在第一衬底上的第一结合层耦合到第二衬底，其中 第二衬底包括器件层。 接合可以包括层转移工艺，其中形成集成的MEMS器件。

公开(公告)号：US07833816B2

公开(公告)日：2010-11-16

申请号：US11296959

申请日：2005-12-07

Applicant: Rajashree Baskaran

Inventor： Rajashree Baskaran

IPC: H01L21/00

CPC classification number: H01L27/16 ,  H01L21/4882 ,  H01L23/38 ,  H01L27/12 ,  H01L2924/0002 ,  Y10S257/93 ,  H01L2924/00

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.

Abstract translation: 描述形成微电子结构的方法。 这些方法的实施例包括通过基板的第一表面形成第一多个开口，在第一多个开口内形成p型TFTEC材料，形成基本上邻近第一多个开口的第二多个开口，穿过第一 然后在第二多个开口内形成n型TFTEC材料。

公开(公告)号：US20070252253A1

公开(公告)日：2007-11-01

申请号：US11414273

申请日：2006-04-27

Applicant: Gregory Chrysler ,  Rajashree Baskaran

Inventor： Gregory Chrysler ,  Rajashree Baskaran

IPC: H01L23/02 ,  H01L21/00

CPC classification number: H01L23/473 ,  H01L23/3121 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A stacked die package includes a substrate (210, 310), a first die (220, 320) above the substrate, a spacer (230, 330) above the first die, a second die (240, 340) above the spacer, and a mold compound (250, 370) disposed around at least a portion of the first die, the spacer, and the second die. The spacer includes a heat transfer conduit (231, 331, 333, 351, 353) representing a path of lower overall thermal resistance than that offered by the mold compound itself. The heat transfer path created by the heat transfer conduit may result in better thermal performance, higher power dissipation rates, and/or lower operating temperatures for the stacked die package.

Abstract translation: 堆叠的管芯封装包括衬底（210,310），衬底上的第一管芯（220,320），第一管芯上方的间隔物（230,330），间隔物上方的第二管芯（240,340），以及 设置在第一模具，间隔件和第二模具的至少一部分周围的模具化合物（250,370）。 间隔件包括传热管道（231,331,333,351,353），其表示比由模具化合物本身提供的更低的整体热阻的路径。 由传热导管产生的传热路径可以导致堆叠管芯封装具有更好的热性能，更高的功耗率和/或较低的工作温度。

公开(公告)号：US20070093066A1

公开(公告)日：2007-04-26

申请号：US11257595

申请日：2005-10-24

Applicant: Rajashree Baskaran ,  Shriram Ramanathan ,  Patrick Morrow

Inventor： Rajashree Baskaran ,  Shriram Ramanathan ,  Patrick Morrow

IPC: H01L21/00 ,  H01L21/306 ,  H01L21/302 ,  H01L21/311

CPC classification number: H01L21/76898 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Some embodiments of the present invention include apparatuses and methods relating to stacked wafer or die packaging with enhanced thermal and device performance.

Abstract translation: 本发明的一些实施例包括与具有增强的热和器件性能的堆叠晶片或管芯封装相关的装置和方法。

公开(公告)号：US20070066034A1

公开(公告)日：2007-03-22

申请号：US11230031

申请日：2005-09-19

Applicant: Rajashree Baskaran ,  Kramadhati Ravi

Inventor： Rajashree Baskaran ,  Kramadhati Ravi

IPC: H01L21/322

CPC classification number: H01L21/0405 ,  H01L21/4871 ,  H01L23/3732 ,  H01L23/433 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00

Abstract: Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.

Abstract translation: 公开了一种形成具有金刚石（或其他材料，例如类金刚石碳）岛的衬底的方法以及由这种衬底形成的集成电路器件。 金刚石岛可以形成在基板上形成的集成电路的热解解的一部分，并且金刚石岛还可以提供部分应力工程解决方案以改善集成电路的性能。 描述和要求保护其他实施例。

公开(公告)号：US20070056621A1

公开(公告)日：2007-03-15

申请号：US11227576

申请日：2005-09-14

Applicant: Rajashree Baskaran

Inventor： Rajashree Baskaran

IPC: H01L35/34 ,  H01L35/28

CPC classification number: H01L35/32 ,  H01L35/16 ,  H01L35/34 ,  H01L2224/95085

Abstract: A self-assembled thin film thermoelectric device useful for thermal management of semiconductor devices, for medical treatment, or for other applications where precise, efficient, and controlled heating or cooling may be useful. TEC elements, including n-type TEC elements and p-type TEC elements may be self-assembled to binding sites on a substrate, and alternating TEC element types may be electrically coupled to each other with metallization in a serial circuit arrangement. A substrate suitable for self-assembly of a TFTEC device may include heat generating devices, cooling devices, or thermally neutral devices. Binding sites may be provided or activated so that TEC elements may be attracted to, aligned with, or attached to the binding sites.

Abstract translation: 可用于半导体器件，用于医疗处理或用于精确，有效和受控加热或冷却的其他应用的热管理的自组装薄膜热电装置可能是有用的。 包括n型TEC元件和p型TEC元件的TEC元件可以自组装到衬底上的结合位置，并且交替的TEC元件类型可以通过串联电路布置中的金属化彼此电耦合。 适用于TFTEC装置的自组装的基板可以包括发热装置，冷却装置或热中性装置。 可以提供或激活结合位点，使得TEC元件可以被吸引到，结合位点或连接到结合位点。