中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

77 records (took 0.021 seconds)

    Apparatus and method of measuring uniformity based on pupil image and method of manufacturing mask by using the method
    31.
    发明授权
    Apparatus and method of measuring uniformity based on pupil image and method of manufacturing mask by using the method 有权

    公开(公告)号：US11562477B2

    公开(公告)日：2023-01-24

    申请号：US17189893

    申请日：2021-03-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Kim ,  Hakseung Han ,  Jiyoung Kim ,  Jinback Park

    IPC: G06K9/00 ,  G06T7/00 ,  G02B27/14 ,  G01N21/95

    Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.

    Semiconductor memory device
    32.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US11289488B2

    公开(公告)日：2022-03-29

    申请号：US16744572

    申请日：2020-01-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joongchan Shin ,  Jiyoung Kim ,  Hui-Jung Kim ,  Taehyun An ,  Eunju Cho ,  Hyungeun Choi ,  Sangyeon Han

    IPC: H01L27/108 ,  G11C5/06

    Abstract: Disclosed is a semiconductor memory device including a stack structure including layers which are vertically stacked on a substrate and each of which includes a bit line extending in a first direction and a semiconductor pattern extending in a second direction from the bit line, a gate electrode which is in a hole penetrating the stack structure and extending along a stack of semiconductor patterns, a vertical insulating layer covering the gate electrode and filling the hole, and a data storage element electrically connected to the semiconductor pattern. The data storage element includes a first electrode, which is in a first recess of the vertical insulating layer and has a cylindrical shape whose one end is opened, and a second electrode, which includes a first protrusion in a cylinder of the first electrode and a second protrusion in a second recess of the vertical insulating layer.

    Semiconductor memory device and method of fabricating the same
    33.
    发明授权
    Semiconductor memory device and method of fabricating the same 有权

    公开(公告)号：US10903216B2

    公开(公告)日：2021-01-26

    申请号：US16520730

    申请日：2019-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jiyoung Kim ,  Daewon Kim ,  Dongjin Lee

    IPC: H01L27/108 ,  G11C5/06 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4097

    Abstract: Disclosed are a semiconductor memory device and a method of fabricating the same. The device may include a first substrate comprising a cell array region, a first interlayer insulating layer covering the first substrate, a second substrate disposed on the first interlayer insulating layer, the second substrate including a core region electrically connected to the cell array region, a first adhesive insulating layer interposed between the first interlayer insulating layer and the second substrate, and contact plugs penetrating the second substrate, the first adhesive insulating layer, and the first interlayer insulating layer and electrically connecting the cell array region with the core region.

    Particle counter and immersion exposure system including the same
    37.
    发明授权
    Particle counter and immersion exposure system including the same 有权
    粒子计数器和浸入曝光系统包括相同

    公开(公告)号：US09250544B2

    公开(公告)日：2016-02-02

    申请号：US14080977

    申请日：2013-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinho Kim ,  Jiyoung Kim ,  Jeong-In Yoon ,  Kwangshin Lim

    IPC: G03B27/54 ,  G03F7/20 ,  G01N15/00 ,  G01N15/14

    CPC classification number: G03F7/7085 ,  G01N15/00 ,  G01N15/1434 ,  G01N15/1459 ,  G01N2015/0011 ,  G01N2015/0053 ,  G03F7/70341 ,  G03F7/70916

    Abstract: A particle counter may include a housing having an inlet, an outlet, and a window therebetween. The inlet and the outlet may be configured such that a fluid can be flowed therethrough. A plurality of light sources may be arranged outside the housing to provide lights of different wavelengths into the housing through the window. Sensors may be provided outside the housing to detect fractions of the lights scattered by a bubble and/or a particle in the fluid. A control part may be configured to monitor intensities of the lights detected by the sensors and to analyze a difference in intensity between the scattered lights, thereby distinguishing the particles from the bubbles in the fluid.

    Abstract translation: 颗粒计数器可以包括在其间具有入口，出口和窗口的壳体。 入口和出口可以被配置为使得流体可以流过其中。 多个光源可以布置在壳体外部，以通过窗口将不同波长的光提供到壳体中。 传感器可以设置在壳体外部，以检测由气泡和/或流体中的颗粒散射的光的分数。 控制部件可以被配置为监测由传感器检测到的光的强度并且分析散射光之间的强度差，从而将颗粒与流体中的气泡区分开。

    Semiconductor device
    38.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09087728B2

    公开(公告)日：2015-07-21

    申请号：US14097937

    申请日：2013-12-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Woo Chung ,  Jiyoung Kim ,  Yoosang Hwang

    IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/108

    CPC classification number: H01L27/10814 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/10894

    Abstract: A method of manufacturing a semiconductor device includes forming device isolation layer in a substrate to define active regions of which each has first regions and a second region between the first regions, forming a first trench and a pair of second trenches in the substrate, and forming gates in the second trenches, respectively. The first trench extends in a first direction and crosses the active regions and the device isolation layer. The second trenches are connected to a bottom of the first trench and extend in the first direction at both sides of the second regions.

    Abstract translation: 一种制造半导体器件的方法包括在衬底中形成器件隔离层，以限定其中各具有第一区域的有源区和在第一区之间的第二区，在衬底中形成第一沟槽和一对第二沟槽， 分别在第二壕沟的大门。 第一沟槽沿第一方向延伸并与有源区和器件隔离层交叉。 第二沟槽连接到第一沟槽的底部并且在第二区域的两侧沿第一方向延伸。

    Apparatus and method of measuring uniformity based on pupil image and method of manufacturing mask by using the method
    39.
    发明授权
    Apparatus and method of measuring uniformity based on pupil image and method of manufacturing mask by using the method 有权

    公开(公告)号：US12260539B2

    公开(公告)日：2025-03-25

    申请号：US18093030

    申请日：2023-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Kim ,  Hakseung Han ,  Jiyoung Kim ,  Jinback Park

    IPC: G06K9/00 ,  G01N21/95 ,  G02B27/14 ,  G06T7/00

    Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.

    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
    40.
    发明申请
    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20240414912A1

    公开(公告)日：2024-12-12

    申请号：US18813670

    申请日：2024-08-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yoonjo Hwang ,  Jiyoung Kim ,  Jungtae Sung ,  Junyoung Choi

    IPC: H10B41/27 ,  G11C5/02 ,  H01L23/522 ,  H01L23/528 ,  H10B43/27

    Abstract: A semiconductor device includes a first substrate structure including a first substrate, circuit devices, first interconnection lines, bonding metal layers on upper surfaces of the first interconnection lines, and a first bonding insulating layer on the upper surfaces of the first interconnection lines and on lateral surfaces of the bonding metal layers, and a second substrate structure on the first substrate structure, and including a second substrate, gate electrodes, channel structures, second interconnection lines, bonding vias connected to the second interconnection lines and the bonding metal layers and having a lateral surface that is inclined such that widths of the bonding vias increase approaching the first substrate structure, and a second bonding insulating layer in contact with at least lower portions of the bonding vias. The bonding metal layers include dummy bonding metal layers not connected to the bonding vias and that contacts the second bonding insulating layer.

Patent Agency Ranking