公开(公告)号：US11476117B2

公开(公告)日：2022-10-18

申请号：US16928560

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun Byun ,  Hyoungsub Kim ,  Taejin Park ,  Hoijoon Kim ,  Hyeonjin Shin ,  Wonsik Ahn ,  Mirine Leem ,  Yeonchoo Cho

IPC: H01L21/02

Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

公开(公告)号：US11086223B2

公开(公告)日：2021-08-10

申请号：US16426046

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Yeonchoo Cho

IPC: G03F7/36 ,  G03F7/11 ,  G03F7/09 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

公开(公告)号：US10684560B2

公开(公告)日：2020-06-16

申请号：US15917947

申请日：2018-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Minhyun Lee ,  Yeonchoo Cho

IPC: G03B27/62 ,  G03F7/20 ,  G03F1/62 ,  G03F1/22 ,  G03F1/64

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.

公开(公告)号：US20180350915A1

公开(公告)日：2018-12-06

申请号：US15807096

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  C01B32/186 ,  H01L21/02 ,  H01L29/167 ,  H01L23/532 ,  H01L21/3065

CPC classification number: H01L29/1606 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/66015

Abstract: A semiconductor device includes a substrate and a graphene layer. The substrate includes an insulator and a semiconductor. The graphene layer is grown on a surface of the semiconductor. The semiconductor includes at least one of a group IV material and a group III-V compound. A method of manufacturing the semiconductor device is disclosed.

公开(公告)号：US20180259844A1

公开(公告)日：2018-09-13

申请号：US15917947

申请日：2018-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Minhyun Lee ,  Yeonchoo Cho

IPC: G03F1/62 ,  G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F7/70983 ,  G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/70283 ,  G03F7/7095 ,  G03F7/70958

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.

公开(公告)号：US12183780B2

公开(公告)日：2024-12-31

申请号：US17465213

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo Cho ,  Kyung-Eun Byun ,  Keunwook Shin ,  Hyeonjin Shin

IPC: H01L29/04 ,  H01L23/522 ,  H01L29/16 ,  H01L29/161 ,  H01L29/49 ,  H01L29/78

Abstract: A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.

公开(公告)号：US11764156B2

公开(公告)日：2023-09-19

申请号：US17362308

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US11682622B2

公开(公告)日：2023-06-20

申请号：US17165246

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook Shin ,  Yonghoon Kim ,  Hyeonjin Shin ,  Hyunjae Song ,  Changseok Lee ,  Changhyun Kim ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53276 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US11508815B2

公开(公告)日：2022-11-22

申请号：US16928508

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Yeonchoo Cho ,  Hyeonjin Shin

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.

公开(公告)号：US11374171B2

公开(公告)日：2022-06-28

申请号：US16823865

申请日：2020-03-19

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Minhyun Lee ,  Dovran Amanov ,  Renjing Xu ,  Houk Jang ,  Haeryong Kim ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Donhee Ham

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.