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31.发明申请公开(公告)号：US20180010245A1
公开(公告)日：2018-01-11
申请号：US15368892
申请日：2016-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jooho LEE , Yongsung KIM , Sanghoon SONG , Wooyoung YANG , Changseung LEE , Sungjin LIM , Junsik HWANG
CPC classification number: C23C16/34 , C23C16/045 , C23C16/06 , C23C16/308 , C23C16/4408 , C23C16/45523 , C23C16/50 , C23C16/515 , H01J37/32 , H01J37/3244 , H01J2237/3321 , H01M4/0428 , H01M4/13 , H01M10/052 , H01M2220/30 , H01M2300/0068
Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.
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公开(公告)号：US20240387611A1
公开(公告)日：2024-11-21
申请号：US18789832
申请日：2024-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC: H10B12/00
Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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33.发明公开公开(公告)号：US20240297210A1
公开(公告)日：2024-09-05
申请号：US18662107
申请日：2024-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Eunae CHO , Yongsung KIM , Boeun PARK , Narae HAN
IPC: H01G4/10
Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).
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34.发明申请公开(公告)号：US20230074895A1
公开(公告)日：2023-03-09
申请号：US17984877
申请日：2022-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woojin LEE , Kiyoung LEE , Yongsung KIM , Eunsun KIM
IPC: H01L29/51 , H01L27/11585 , H01L27/11502 , C01G23/00 , C01G35/00
Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.
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公开(公告)号：US20210405498A1
公开(公告)日：2021-12-30
申请号：US17469189
申请日：2021-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongyub LEE , Yongsung KIM , Jaekwan KIM , Changseung LEE
IPC: G02F1/21
Abstract: Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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Patent Agency Ranking
公开(公告)号：US20210115564A1
公开(公告)日：2021-04-22
申请号：US16827862
申请日：2020-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bo-Eun PARK , Jooho LEE , Yongsung KIM , Jeonggyu SONG
IPC: C23C16/56 , H01L27/11585 , H01L27/11502 , C23C16/455 , C23C14/58 , C23C14/08 , C23C16/40 , C01G27/02
Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.
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公开(公告)号：US20210028235A1
公开(公告)日：2021-01-28
申请号：US17071364
申请日：2020-10-15
Inventor： Seunghoon HAN , Kwanghee LEE , Yongwan JIN , Yongsung KIM , Changgyun SHIN , Jeongyub LEE , Amir ARBABI , Andrei FARAON , Yu HORIE
IPC: H01L27/30 , H01L27/146
Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.
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公开(公告)号：US20200273698A1
公开(公告)日：2020-08-27
申请号：US16520990
申请日：2019-07-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Kyooho JUNG , Yongsung KIM , Jeongil BANG , Jooho LEE , Junghwa KIM , Haeryong KIM , Myoungho JEONG
IPC: H01L21/02 , H01L29/786 , H01L29/66 , H01L21/768
Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.
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公开(公告)号：US20170287981A1
公开(公告)日：2017-10-05
申请号：US15473767
申请日：2017-03-30
Inventor： Seunghoon HAN , Kwanghee LEE , Yongwan JIN , Yongsung KIM , Changgyun SHIN , Jeongyub LEE , Amir ARBABI , Andrei FARAON , Yu HORIE
IPC: H01L27/30 , H01L27/146
CPC classification number: H01L27/307 , H01L27/14621 , H01L27/14636 , H01L27/1464 , H01L27/14645
Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.
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公开(公告)号：US20170069436A1
公开(公告)日：2017-03-09
申请号：US15066780
申请日：2016-03-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooho LEE , Yongsung KIM , Changseung LEE
Abstract: Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate.
Abstract translation: 示例性实施例涉及通过选择性地生长石墨烯层的缺陷部位上的氧化物层并蚀刻氧化物层以形成石墨烯纳米网来制造石墨烯纳米网的方法。 该方法包括在催化剂层上形成石墨烯层，在石墨烯层的缺陷部位形成氧化层，通过蚀刻氧化层形成包括多个开口的石墨烯纳米网，并且在除去催化剂层之后转移 ，石墨烯纳米网到基底上。
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