Abstract:
A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.
Abstract:
An imaging and pulse detection pixel and an array of imaging and pulse detection pixels are provided. Each imaging and pulse detection pixel includes an optical detection device connected directly to a first and second transistor only, a pulse detection circuit that operates on the signal read out from the optical detection device and outputs a pulse detection output signal suitable for detection of pulses, and an imaging circuit that operates on a signal read out from the optical detection device and outputs an image output signal suitable for generation of an image. A terminal of the optical detection device is directly connected to only a gate terminal of the first transistor and a non-gate terminal of the second transistor.
Abstract:
A method of correcting lag in an imaging pixel includes receiving a current frame pixel value and determining a current filter coefficient using the current frame pixel value. A pixel output is determined from a product of the current frame pixel value and current frame filter coefficient. The product of a first prior frame pixel value and corresponding first prior frame filter coefficient is added to the pixel output to generate a corrected pixel output to more closely indicates incident illumination on the imaging pixel during an integration period from which the current frame pixel value was obtained.
Abstract:
An imaging system includes a readout integrated circuit (ROIC) is operatively connected to receive photocurrent from a plurality of photodetectors (e.g., from a plurality of photodetectors of a photodetector array (PDA)). An event detection circuit in each ROIC pixel readout circuit generates binary output data, wherein the ROIC compresses the binary output data with a logical summary binning of N×M pixel binary outputs into a single summary output bit. The ROIC can be configured to receive image data from the photodetectors to form an image at a first frame rate, and to receive the binned binary data from the photodetectors at a second frame rate higher than the first frame rate.
Abstract:
An imaging sensor includes an imaging array with a plurality of pixels. A sub-set of the pixels are marker pixels configured to each provide a constant respective output value to embed an orientation and alignment marker in images produced with the imaging array. The marker pixels can be sparsely distributed across the imaging array.
Abstract:
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding output voltage in response to the input light stimulus. The output voltage may correspond linearly to the magnitude of the input light stimulus over a linear operating region and logarithmically to the magnitude of the input light stimulus over a logarithmic operating region. In this manner, the photosensitive pixel with gain stage may be both sensitive to input light stimuli over the linear operating region and may exhibit dynamic range enabling non-saturated response to input light stimuli over the logarithmic operating region.
Abstract:
An imaging pixel is provided. The imaging pixel includes a photodetector that outputs charge signals in response to incident light and laser pulses and a high-frequency path. A detector biasing circuit is further provided that biases high-frequency signals of the charge signals that are associated with the laser pulses to follow the high frequency path. The detector biasing circuit effectively filters low-frequency signal components of the charge signals from following the high-frequency path.
Abstract:
An imaging pixel including a control device to control flow of a charge signal from a photodetector. The control device has a variable impedance that varies in response to frequency of an input signal, the control device being biased to permit signals to flow through the control device dependent on the frequency of signals being output by the photodetector. The imaging pixel further includes a low-frequency signal path that receives a flow of signals that flow through the control device, and a high-frequency signal path independent of the low-pass filter and the control device, the high-frequency signal path receiving high-frequency signals included in the charge signal.
Abstract:
A circuit having a buffered direct injection (BDI) module is provided for image lag mitigation. The BDI module includes an optical detector coupled to a buffer. The buffer has a pixel amplifier which includes no more than two transistors. The BDI module includes a first current mirror coupled to the BDI module. The first current mirror generates a modulating current based on the output of the optical detector. The BDI module further includes a second current mirror coupled to the first current mirror. The second current mirror is configured to generate either an amplified or attenuated photocurrent operable to optimize an imaging time and scene brightness of the optical detector. The BDI module further includes a reset circuit, coupled to the second current mirror, and being configured to reset an integration capacitor which integrates an image signal based on the output of the optical detector.
Abstract:
An imager is provided that includes an integrated circuit. The integrated circuit includes at least one metal layer, a signal line extending in a first direction, and a pixel cell. The pixel cell includes imaging pixels and a metal interconnect. The imaging pixels include first, second, third, and fourth imaging pixels, arranged in two rows and two columns, each imaging pixel having a metal-insulator-metal (MiM) capacitor disposed on the at least one metal layer, the first and second imaging pixels being traversed by the signal line to receive signals from the signal line. The metal interconnect extends in a second direction different than the first direction and is coupled to the signal line and the third imaging pixel to transmit the signals to the third imaging pixel. The third imaging pixel is adjacent to the first imaging pixel and is disposed in a different column or row than the second imaging pixel.