Pixel output processing circuit with laser range finding (LRF) capability

    公开(公告)号:US10955551B2

    公开(公告)日:2021-03-23

    申请号:US15785069

    申请日:2017-10-16

    Abstract: A pixel output processing circuit of a focal plane array (FPA) having a plurality of laser range finding pixels (LRF) is provided. The respective LRF pixels output a high frequency analog signal in response to sensing a reflected laser pulse. The pixel output processing circuit includes a common net and a detection circuit. The common net is connected to a amplifying transistor of each of the LRF pixels for receiving analog signals output from the respective LRF pixels. The detection circuit is coupled to the common net and outputs a pulse flag in response to detecting that a high frequency analog signal has been received by the common net.

    BUMP STRUCTURES FOR HIGH DENSITY FLIP CHIP INTERCONNECTION

    公开(公告)号:US20200227370A1

    公开(公告)日:2020-07-16

    申请号:US16838322

    申请日:2020-04-02

    Abstract: A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.

    MESAS AND IMPLANTS IN TWO-DIMENSIONAL ARRAYS

    公开(公告)号:US20190296058A1

    公开(公告)日:2019-09-26

    申请号:US15935080

    申请日:2018-03-26

    Abstract: A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

    Threat detection
    8.
    发明授权

    公开(公告)号:US10175030B2

    公开(公告)日:2019-01-08

    申请号:US15457464

    申请日:2017-03-13

    Abstract: A method of threat detection includes illuminating a scene with short-wavelength infrared (SWIR) illumination and receiving a return of the SWIR illumination reflected back from the scene. The method includes analyzing the return of the SWIR illumination to detect presence of man-made optics in the scene. Illuminating, receiving, and analyzing can be performed by a device, e.g., a rifle-mounted laser device.

    Digital output binning
    9.
    发明授权

    公开(公告)号:US10097775B2

    公开(公告)日:2018-10-09

    申请号:US15266134

    申请日:2016-09-15

    Inventor: Joshua Lund

    Abstract: An imaging system includes a readout integrated circuit (ROIC) is operatively connected to receive photocurrent from a plurality of photodetectors (e.g., from a plurality of photodetectors of a photodetector array (PDA)). An event detection circuit in each ROIC pixel readout circuit generates binary output data, wherein the ROIC compresses the binary output data with a logical summary binning of N×M pixel binary outputs into a single summary output bit. The ROIC can be configured to receive image data from the photodetectors to form an image at a first frame rate, and to receive the binned binary data from the photodetectors at a second frame rate higher than the first frame rate.

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