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    Material composition and methods thereof
    35.
    发明授权
    Material composition and methods thereof 审中-公开

    公开(公告)号：US10672619B2

    公开(公告)日：2020-06-02

    申请号：US15628355

    申请日：2017-06-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/027 ,  H01L21/308 ,  G03F7/40 ,  G03F7/26

    Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

    Extreme Ultraviolet Lithography System
    36.
    发明申请
    Extreme Ultraviolet Lithography System 审中-公开

    公开(公告)号：US20200019070A1

    公开(公告)日：2020-01-16

    申请号：US16035354

    申请日：2018-07-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Hui Weng ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/20

    Abstract: Semiconductor systems, apparatuses and methods are provided. In one embodiment, an extreme ultraviolet lithography system includes a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon; at least one electrode positioned at a second vertical level above the first vertical level; and a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage.

    Lithography techniques for reducing resist swelling
    37.
    发明授权
    Lithography techniques for reducing resist swelling 有权

    公开(公告)号：US10520822B2

    公开(公告)日：2019-12-31

    申请号：US15639033

    申请日：2017-06-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Hui Weng ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/40 ,  G03F7/039

    Abstract: The present disclosure provides lithography resist materials and corresponding lithography techniques for improving lithography resolution, in particular, by reducing swelling of resist layers during development. An exemplary lithography method includes performing a treatment process on a resist layer to cause cross-linking of acid labile group components of the resist layer via cross-linkable functional components, performing an exposure process on the resist layer, and performing a development process on the resist layer. In some implementations, the resist layer includes an exposed portion and an unexposed portion after the exposure process, and the treatment process reduces solubility of the unexposed portion to a developer used during the development process by increasing a molecular weight of a polymer in the unexposed portion. The treatment process is performed before or after the exposure process. The treatment process can include performing a thermal treatment and/or an electromagnetic wave treatment to heat the resist layer.

    Method for forming vias and method for forming contacts in vias
    38.
    发明授权
    Method for forming vias and method for forming contacts in vias 有权

    公开(公告)号：US10515847B2

    公开(公告)日：2019-12-24

    申请号：US16007648

    申请日：2018-06-13

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tzu-Yang Lin ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/00 ,  H01L21/768 ,  H01L21/033 ,  H01L21/027

    Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.

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