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    Methods for forming layers within a MEMS device using liftoff processes to achieve a tapered edge
    31.
    发明申请
    Methods for forming layers within a MEMS device using liftoff processes to achieve a tapered edge 失效
    在使用提升工艺实现锥形边缘的MEMS装置内形成层的方法

    公开(公告)号：US20070041703A1

    公开(公告)日：2007-02-22

    申请号：US11506622

    申请日：2006-08-18

    Applicant: Chun-Ming Wang

    Inventor： Chun-Ming Wang

    IPC: G02B6/00

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

    Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

    MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
    32.
    发明申请
    MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same 有权
    具有构造成使应力相关变形最小化的支撑结构的MEMS器件及其制造方法

    公开(公告)号：US20070041076A1

    公开(公告)日：2007-02-22

    申请号：US11506594

    申请日：2006-08-18

    Applicant: Fan Zhong ,  Lior Kogut

    Inventor： Fan Zhong ,  Lior Kogut

    IPC: G02B26/00

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

    Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

    High reflector tunable stress coating, such as for a MEMS mirror
    33.
    发明申请
    High reflector tunable stress coating, such as for a MEMS mirror 有权
    高反射可调应力涂层，例如用于MEMS镜

    公开(公告)号：US20060182403A1

    公开(公告)日：2006-08-17

    申请号：US11400076

    申请日：2006-04-07

    Applicant: Michael Goldstein

    Inventor： Michael Goldstein

    IPC: G02B6/10

    CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

    Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

    Abstract translation: 具有高反射器可调应力涂层的光学装置包括微机电系统（MEMS）平台，设置在MEMS平台上的反射镜和设置在反射镜上的多层涂层。 多层涂层包括沉积在Ag层上的银（Ag）层，二氧化硅层（SiO 2 SiO 2），沉积在SiO 2层上的本征硅（Si）层 以及沉积在Si层上的氮氧化硅层（SiO x x N y Y y）。 氮的浓度增加和/或降低以调节应力（例如，拉伸，无，压缩）。

    Micromechanical structural element having a diaphragm and method for producing such a structural element
    36.
    发明申请
    Micromechanical structural element having a diaphragm and method for producing such a structural element 有权
    具有隔膜的微机械结构元件及其制造方法

    公开(公告)号：US20050098840A1

    公开(公告)日：2005-05-12

    申请号：US10970069

    申请日：2004-10-19

    Applicant: Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

    Inventor： Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

    IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00 ,  H01L27/14

    CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0167

    Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

    Abstract translation: 具有非常稳定的隔膜的微机械结构元件以纯正的前工艺和基底上的层结构实现。 该层结构包括至少一个牺牲层和牺牲层上方的一个隔膜层，其被构造用于铺设隔膜并在隔膜上产生稳定元件，为隔膜的稳定元件产生至少一个凹槽。 然后在牺牲层中产生的结构至少被表面封闭，其中至少一个材料层沉积在结构化牺牲层的上方，该材料层形成隔膜层的至少一部分并被构造成产生至少一个蚀刻孔 蚀刻从蚀刻孔下方的区域去除的牺牲层，隔膜和至少一个稳定元件被裸露，在隔膜下面形成空腔。

    Stress control of semiconductor microstructures for thin film growth
    37.
    发明授权
    Stress control of semiconductor microstructures for thin film growth 有权
    用于薄膜生长的半导体微结构的应力控制

    公开(公告)号：US06858888B2

    公开(公告)日：2005-02-22

    申请号：US10302777

    申请日：2002-11-22

    Applicant: Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    Inventor： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    IPC: B81B3/00 ,  B81C1/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/80 ,  H01L29/82 ,  H01L31/036 ,  H01L31/112

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

    Abstract: A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

    Abstract translation: 悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜 。 结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。 通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。

    MEMS encapsulated structure and method of making same
    39.
    发明授权
    MEMS encapsulated structure and method of making same 有权
    MEMS封装结构及其制作方法

    公开(公告)号：US06800503B2

    公开(公告)日：2004-10-05

    申请号：US10300520

    申请日：2002-11-20

    Applicant: Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    Inventor： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    IPC: H01L2100

    CPC classification number: B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

    Abstract: A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

    Abstract translation: 一种制造封装的微电子机械系统（MEMS）的方法及其制造方法，包括形成电介质层，图案化介电层的上表面以形成沟槽，在沟槽内形成释放材料，图案化上表面 形成另一个沟槽，形成第一封装层，该第一封装层包括另一个沟槽内的侧壁，在第一封装层内形成核心层，以及在芯层上方形成第二封装层，其中第二封装层被连接 到第一封装层的侧壁。 或者，该方法包括通过光掩模工艺形成多层MEMS结构以形成第一金属层，第二层包括电介质层和第二金属层以及第三金属层。 芯层和封装层由具有互补的电，机械和/或磁性的材料制成。

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