公开(公告)号：US06958123B2

公开(公告)日：2005-10-25

申请号：US10167272

申请日：2002-06-10

Applicant: Jason S. Reid ,  Nungavaram S. Viswanathan

Inventor： Jason S. Reid ,  Nungavaram S. Viswanathan

IPC: B81B3/00 ,  C23F1/00 ,  H01L21/00

CPC classification number: B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法，包括：在衬底上提供有机层; 在提供有机层之后，提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

公开(公告)号：US20050205515A1

公开(公告)日：2005-09-22

申请号：US11011111

申请日：2004-12-15

Applicant: Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

Inventor： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  C09K13/08 ,  H01L21/304 ,  H01L21/308 ,  H01L21/31 ,  H01L29/84 ,  H01L21/302 ,  B44C1/22

CPC classification number: B81C1/00849 ,  B81C2201/117

Abstract: A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Abstract translation: 一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的 氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。 通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害 身体。

公开(公告)号：US20050164127A1

公开(公告)日：2005-07-28

申请号：US11041834

申请日：2005-01-24

Applicant: Jason Reid ,  Nungavaram Viswanathan

Inventor： Jason Reid ,  Nungavaram Viswanathan

IPC: B81B3/00 ,  G03C5/00

CPC classification number: B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

公开(公告)号：US20050118832A1

公开(公告)日：2005-06-02

申请号：US10724791

申请日：2003-12-01

Applicant: Michael Korzenski ,  Thomas Baum ,  Eliodor Ghenciu

Inventor： Michael Korzenski ,  Thomas Baum ,  Eliodor Ghenciu

IPC: B08B7/00 ,  B81B3/00 ,  H01L21/306 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.

Abstract translation: 描述了从具有这种牺牲层的微机电系统（MEMS）衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体，蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得蚀刻的MEMS衬底相对于使用常规湿蚀刻技术蚀刻的MEMS衬底的静态故障事件。

公开(公告)号：US06782900B2

公开(公告)日：2004-08-31

申请号：US09951353

申请日：2001-09-13

Applicant: James DeYoung ,  James B. McClain ,  Michael E. Cole ,  Steven Lee Worm ,  David Brainard

Inventor： James DeYoung ,  James B. McClain ,  Michael E. Cole ,  Steven Lee Worm ,  David Brainard

IPC: B08B300

CPC classification number: C23G5/00 ,  B08B7/0021 ,  B81C1/00841 ,  B81C2201/117 ,  H01L21/02063 ,  H01L21/67051 ,  Y10S134/902

Abstract: An apparatus for cleaning a microelectronic substrate includes a pressure chamber, a supply of a process liquid including dense phase CO2 fluidly connected to the chamber and a distilling system. Distilling system includes a still fluidly connected to the chamber and operative to separate CO2 from the process fluid. The distilling system is operative to re-introduce the separated CO2 into the chamber or a further chamber.

Abstract translation: 用于清洁微电子衬底的装置包括压力室，包括流体连接到室的致密相CO 2的处理液的供应和蒸馏系统。 蒸馏系统包括仍然流体连接到室并且用于将CO 2与工艺流体分离。 蒸馏系统可操作以将分离的CO 2重新引入室或另外的室中。

公开(公告)号：US20040139987A1

公开(公告)日：2004-07-22

申请号：US10756027

申请日：2004-01-13

Inventor： David J. Mount

IPC: B08B003/12

CPC classification number: B81C1/00928 ,  B08B7/0021 ,  B81C2201/117

Abstract: One embodiment of the present invention provides a method for the removal of organic sacrificial layers from a micro-electromechanical structure including the steps of: immersing the structure in at least one bath of at least a first organic solvent, thereby removing substantially all of the organic sacrificial layers; rinsing the structure in a bath of a second organic solvent; transferring the structure to a pressure chamber without substantial evaporation of the second organic solvent wherein the structure is immersed in a second bath of the second organic solvent; closing, pressurizing and filling the pressure chamber with liquid carbon dioxide whereby the second solvent is substantially displaced; heating the liquid carbon dioxide above its critical temperature, thereby permitting the carbon dioxide to undergo a phase change to the supercritical phase; venting the carbon dioxide to the atmosphere.

Abstract translation: 本发明的一个实施方案提供了一种从微机电结构去除有机牺牲层的方法，包括以下步骤：将结构浸入至少一个至少第一有机溶剂的浴中，从而除去基本上所有的有机溶剂 牺牲层; 在第二有机溶剂的浴中冲洗结构; 将结构转移到压力室，而不会使第二有机溶剂基本上蒸发，其中该结构被浸入第二有机溶剂的第二浴中; 用液体二氧化碳关闭，加压和填充压力室，由此第二溶剂基本上位移; 加热液体二氧化碳超过其临界温度，从而使二氧化碳经历相转变为超临界相; 将二氧化碳排放到大气中。

公开(公告)号：US20040035021A1

公开(公告)日：2004-02-26

申请号：US10367080

申请日：2003-02-14

Inventor： Chantal J. Arena-Foster ,  Allan Wendell Awtrey ,  Nicholas Alan Ryza ,  Paul Schilling

IPC: F26B005/06

CPC classification number: B81C1/00 ,  B81C2201/117 ,  G03F7/40

Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Abstract translation: 一种用于干燥具有聚合物膜的物体的方法，其中物体浸没在漂洗液体中。 将物体从冲洗液体中取出，并且将物体放置在溶剂浴中，在足够量的冲洗液体可以从物体蒸发之前。 溶剂浴中溶剂的密度取决于聚合物膜相对于力的取向方向。 从溶剂浴中取出物体。 进行干燥处理。

公开(公告)号：US20030124462A1

公开(公告)日：2003-07-03

申请号：US10034647

申请日：2001-12-28

Applicant: Texas Instruments Incorporated

Inventor： Seth Andrian Miller

IPC: G03F007/00

CPC classification number: B81C1/00476 ,  B81B3/0005 ,  B81C2201/056 ,  B81C2201/117 ,  G03F7/422

Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中，使用超临界二氧化碳与其它溶剂，共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点，包括可以减少可能损害自立微机械上层建筑的毛细管力的减少，灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。

公开(公告)号：US6133059A

公开(公告)日：2000-10-17

申请号：US30229

申请日：1998-02-25

Applicant: Wolfgang Werner

Inventor： Wolfgang Werner

IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  G01L9/04 ,  G01P15/08 ,  H01L29/84 ,  H01L21/00 ,  G01P15/00

CPC classification number: B81B3/0013 ,  B81C1/00928 ,  G01P15/0802 ,  B81C2201/117 ,  G01P2015/0814

Abstract: The integrated micromechanical sensor device contains a body with a substrate (1) on which an insulating layer (2) and thereon a monocrystalline silicon layer (3) are arranged, in which the silicon layer has trenches as far as the surface of the insulating layer, and the side walls of the trenches as well as the side of the silicon layer adjacent to the insulating layer have a first doping type (n.sup.+) and the silicon layer has a second doping type (n.sup.-) at least in a partial region of its remaining surface, in which the silicon layer has a transistor arrangement in a first region (TB) and a sensor arrangement in a second region (SB), for which the insulating layer (2) is partly removed under the second region. Such a sensor device has considerable advantages over known devices with regard to its properties and its production process.

Abstract translation: 集成微机械传感器装置包括具有衬底（1）的主体，其上布置有绝缘层（2），并且上设置有单晶硅层（3），其中硅层具有沟槽至绝缘层的表面 ，并且沟槽的侧壁以及与绝缘层相邻的硅层的侧面具有第一掺杂型（n +），并且硅层至少在第二掺杂型（n +）的部分区域中具有第二掺杂型（n-） 其中硅层在第一区域（TB）中具有晶体管布置的剩余表面和在第二区域（SB）中的传感器布置，其中绝缘层（2）在第二区域部分地被去除。 相对于已知装置，这种传感器装置具有相对于其性质及其制造方法的优点。

公开(公告)号：US5766367A

公开(公告)日：1998-06-16

申请号：US645976

申请日：1996-05-14

Applicant: James H. Smith ,  Antonio J. Ricco

Inventor： James H. Smith ,  Antonio J. Ricco

IPC: B81B3/00 ,  C23C22/68 ,  C23G1/00

CPC classification number: B81C1/00928 ,  C23C22/68 ,  B81C2201/117

Abstract: A method for preventing micromechanical structures from adhering to another object includes the step of immersing a micromechanical structure and its associated substrate in a chemical species that does not stick to itself. The method can be employed during the manufacture of micromechanical structures to prevent micromechanical parts from sticking or adhering to one another and their associated substrate surface.

Abstract translation: 用于防止微机械结构粘附到另一物体的方法包括将微机械结构及其相关衬底浸入不粘附于其自身的化学物质的步骤。 该方法可以在微机械结构的制造过程中采用，以防止微机械部件彼此粘附或粘附，以及它们相关联的衬底表面。