公开(公告)号：US07105447B2

公开(公告)日：2006-09-12

申请号：US10979249

申请日：2004-11-03

Applicant: Tsutomu Oosaka

Inventor： Tsutomu Oosaka

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/117

Abstract: To provide an etching method capable of forming a cavity portion having a large space portion or a complicated structure by etching a sacrifice layer through a very fine etching opening at favorable accuracy in configuration. An etching process of a object is carried out by exposing the object to a processing fluid containing etching reaction seed (the third step S3, the fourth step S4), and then, the pressure in the processing chamber is reduced to make a density of the processing fluid around the object lower than that in the fourth step S4 (the first step S1). While the first step S1 to the first step S4 are repeated, in the third step S3 and the fourth step S4 executed after the first step S1, the processing fluid containing etching reaction seed is newly supplied to the processing atmosphere in which the object is placed to make the density of the processing fluid around the object higher than that in the first step S1.

Abstract translation: 为了提供能够通过以非常精细的蚀刻开口蚀刻牺牲层而形成具有大空间部分或复杂结构的空腔部分的蚀刻方法。 通过将物体暴露于含有蚀刻反应晶种的处理流体（第三步骤S 3，第四步骤S 4））来进行物体的蚀刻处理，然后将处理室中的压力减小以使密度 的处理流体低于第四步骤S4（第一步骤S1）。 当重复第一步骤S1至第一步骤S4时，在第一步骤S1之后执行的第三步骤S 3和第四步骤S 4中，将含有蚀刻反应种子的处理流体新提供给处理气氛 放置物体以使物体周围的加工流体的密度高于第一步骤S1。

公开(公告)号：US06951769B2

公开(公告)日：2005-10-04

申请号：US10454198

申请日：2003-06-04

Applicant: Joshua Malone

Inventor： Joshua Malone

IPC: B81C1/00 ,  G02B26/08 ,  H01L21/00 ,  H01L21/302

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US20040259370A1

公开(公告)日：2004-12-23

申请号：US10464597

申请日：2003-06-18

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  H01L21/6708

Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后，MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气（例如HF）和润湿蒸气（例如醇蒸汽）的组合改善了基板上蚀刻底切的均匀性。

公开(公告)号：US20030047195A1

公开(公告)日：2003-03-13

申请号：US09951353

申请日：2001-09-13

Inventor： James DeYoung ,  James B. McClain ,  Michael E. Cole ,  Steven Lee Worm ,  David Brainard

IPC: B08B003/02 ,  B08B003/10

CPC classification number: C23G5/00 ,  B08B7/0021 ,  B81C1/00841 ,  B81C2201/117 ,  H01L21/02063 ,  H01L21/67051 ,  Y10S134/902

Abstract: According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

Abstract translation: 根据本发明的方法实施例，一种用于清洁微电子衬底的方法包括将衬底放置在压力室中。 包括密相CO 2的工艺流体循环通过室，使得工艺流体接触基板。 在循环过程流体的步骤的至少一部分期间，循环调节CO 2的相。

公开(公告)号：US07670496B2

公开(公告)日：2010-03-02

申请号：US11011111

申请日：2004-12-15

Applicant: Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

Inventor： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

IPC: H01L21/302

CPC classification number: B81C1/00849 ,  B81C2201/117

Abstract: A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Abstract translation: 一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的 氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。 通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害 身体。

公开(公告)号：US20090004388A1

公开(公告)日：2009-01-01

申请号：US11659563

申请日：2005-06-21

Applicant: Franz Larmer ,  Ralf Reichenbach

Inventor： Franz Larmer ,  Ralf Reichenbach

IPC: B05D3/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2201/117

Abstract: A method for depositing an anti-adhesion layer onto a surface of micromechanical structures on a substrate. The material or precursor material to be deposited being delivered to the structures in a dissolution and transport medium. A supercritical CO2 fluid is present as the dissolution and transport medium. Deposition of the material or precursor material is brought about by a change in the physical state of the CO2 fluid or by a surface reaction between the surface and the precursor material. The method makes possible subsequent coating of the micromechanical structures in a cavity after encapsulation thereof, the material to be deposited being delivered via access channels or perforation holes.

Abstract translation: 一种在衬底上的微机械结构的表面上沉积抗粘附层的方法。 要沉积的材料或前体材料被输送到溶解和运输介质中的结构。 存在超临界CO2流体作为溶解和运输介质。 材料或前体材料的沉积是通过CO 2流体的物理状态的变化或表面与前体材料之间的表面反应引起的。 该方法使得随后在其封装之后在空腔中涂覆微机械结构，待沉积的材料经由接入通道或穿孔而被输送。

公开(公告)号：US20040248417A1

公开(公告)日：2004-12-09

申请号：US10454198

申请日：2003-06-04

Applicant: Texas Instruments Incorporated

Inventor： Joshua J. Malone

IPC: H01L021/302

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US06737225B2

公开(公告)日：2004-05-18

申请号：US10034647

申请日：2001-12-28

Applicant: Seth Andrian Miller

Inventor： Seth Andrian Miller

IPC: G03F742

CPC classification number: B81C1/00476 ,  B81B3/0005 ,  B81C2201/056 ,  B81C2201/117 ,  G03F7/422

Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中，使用超临界二氧化碳与其它溶剂，共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点，包括可以减少可能损害自立微机械上层建筑的毛细管力的减少，灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。

公开(公告)号：US20040022931A1

公开(公告)日：2004-02-05

申请号：US10632698

申请日：2003-08-01

Applicant: PTS Corporation

Inventor： Bevan Staple ,  David Miller ,  Lilac Muller

IPC: B05D005/12

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/117

Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜，牺牲材料和金属材料的微结构通过沉积，图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质，形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。

公开(公告)号：US20030047533A1

公开(公告)日：2003-03-13

申请号：US10167272

申请日：2002-06-10

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Jason S. Reid ,  Nungavaram S. Viswanathan

IPC: C23F001/00 ,  C23C016/00

CPC classification number: B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法，包括：在衬底上提供有机层; 在提供有机层之后，提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。