公开(公告)号：US07643205B2

公开(公告)日：2010-01-05

申请号：US12396759

申请日：2009-03-03

Applicant: Takashi Yoshino

Inventor： Takashi Yoshino

IPC: G02F1/35

CPC classification number: G02F1/3775 ,  G02F2201/066 ,  G02F2202/20

Abstract: A harmonics generating device including a supporting substrate; a wavelength conversion layer having a three-dimensional optical waveguide provided with a periodic domain inversion structure therein, a base adhesive layer for adhering a lower face of the wavelength conversion layer to the supporting substrate; an upper-side substrate provided on an upper face side of the wavelength conversion layer; an upper-side adhesive layer for adhering the wavelength conversion layer to the upper-side substrate; an incident face of a fundamental wave, a projection face of higher harmonics, a first side face between the incident face and the projection face; and a second side face opposing the first side face. A first conductive material contacts the first side face, a second conductive material contacts the second side face, and the first and second conductive materials are electrically connected.

Abstract translation: 一种谐波发生装置，包括支撑基板; 具有在其中设置有周期性畴反转结构的三维光波导的波长转换层，用于将波长转换层的下表面粘附到支撑基板的基底粘合剂层; 设置在所述波长转换层的上表面侧的上侧基板; 用于将波长转换层粘合到上侧基板的上侧粘合剂层; 基波的入射面，高次谐波的投影面，入射面与投影面之间的第一侧面; 以及与第一侧面相对的第二侧面。 第一导电材料接触第一侧面，第二导电材料接触第二侧面，并且第一和第二导电材料电连接。

公开(公告)号：US20090212449A1

公开(公告)日：2009-08-27

申请号：US12434207

申请日：2009-05-01

Applicant: Takashi YOSHINO

Inventor： Takashi YOSHINO

IPC: G02B6/13

CPC classification number: G02F1/3775 ,  G02F1/3558 ,  G02F2201/066 ,  G02F2201/124

Abstract: A voltage is applied on an interdigitated electrode provided on one main face of a single-domain ferroelectric single crystal substrate to form a periodic domain inversion structure 9. The interdigitated electrode is then removed. The optical waveguide 20 is then formed in the substrate 18. An optical intensity center P1 of the optical waveguide is kept away from a location P0 of the end of the interdigitated electrode.

Abstract translation: 在单畴铁电单晶衬底的一个主面上设置的交叉电极上施加电压，形成周期性畴反转结构9，然后除去叉指电极。 然后将光波导20形成在基板18中。光波导的光强度中心P1保持远离交叉电极的端部的位置P0。

公开(公告)号：US07319047B2

公开(公告)日：2008-01-15

申请号：US11333454

申请日：2006-01-17

Applicant: Ruolin Li ,  Ut Tran

Inventor： Ruolin Li ,  Ut Tran

IPC: H01L21/00

CPC classification number: G02F1/065 ,  G02F1/0147 ,  G02F2201/066

Abstract: A polymer well may be formed over a thermal oxide formed over a semiconductor substrate in one embodiment. The well may include a waveguide and a pair of heaters adjacent the waveguide. Each heater may be mounted on a platform of insulating material to reduce heat loss through the substrate and the thermal oxide, in one embodiment.

Abstract translation: 在一个实施例中，聚合物阱可以形成在半导体衬底上形成的热氧化物上。 阱可以包括波导和邻近波导的一对加热器。 在一个实施例中，每个加热器可以安装在绝缘材料的平台上，以减少通过基底和热氧化物的热损失。

公开(公告)号：US07171065B2

公开(公告)日：2007-01-30

申请号：US11084462

申请日：2005-03-17

Applicant: Michael G. Lee ,  Kishio Yokouchi

Inventor： Michael G. Lee ,  Kishio Yokouchi

IPC: G02B6/42 ,  G02B6/26

CPC classification number: G02F1/2255 ,  G02B6/12002 ,  G02B6/1221 ,  G02B2006/12159 ,  G02F2001/212 ,  G02F2201/066 ,  G02F2202/022

Abstract: Compact optical devices and methods of constructing the same are disclosed. The optical devices are formed with perpendicular orientations to the surface of a supporting layer (e.g., substrate), and have three-dimensional structures rather than planar structures. The optical devices can be formed with high density on supporting layers without the need for several built-up layers. Maintaining the processing temperatures within the cure profiles of polymer optical layers is readily achieved.

Abstract translation: 公开了紧凑型光学器件及其构造方法。 光学器件形成为垂直取向到支撑层（例如，衬底）的表面，并且具有三维结构而不是平面结构。 可以在支撑层上形成高密度的光学器件，而不需要几个积层。 在聚合物光学层的固化分布内保持加工温度是容易实现的。

公开(公告)号：US20040262616A1

公开(公告)日：2004-12-30

申请号：US10609839

申请日：2003-06-30

Inventor： Ruolin Li ,  Ut Tran

IPC: H01L027/15

CPC classification number: G02F1/065 ,  G02F1/0147 ,  G02F2201/066

Abstract: A polymer well may be formed over a thermal oxide formed over a semiconductor substrate in one embodiment. The well may include a waveguide and a pair of heaters adjacent the waveguide. Each heater may be mounted on a platform of insulating material to reduce heat loss through the substrate and the thermal oxide, in one embodiment.

Abstract translation: 在一个实施例中，聚合物阱可以形成在半导体衬底上形成的热氧化物上。 阱可以包括波导和邻近波导的一对加热器。 在一个实施例中，每个加热器可以安装在绝缘材料的平台上，以减少通过基底和热氧化物的热损失。

公开(公告)号：US06807327B2

公开(公告)日：2004-10-19

申请号：US10411270

申请日：2003-04-11

Applicant: Takeyoshi Masuda

Inventor： Takeyoshi Masuda

IPC: G02B622

CPC classification number: G02B6/132 ,  G02F1/025 ,  G02F2201/066

Abstract: A multilayer semiconductor portion is provided on a semiconductor substrate on side faces of a semiconductor portion. A second conductive type III-V compound semiconductor layer is provided on the semiconductor portion and the multilayer semiconductor portion. The multilayer semiconductor portion has first to fourth semiconductor layers sequentially arranged on the semiconductor substrate. The first semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the side face of the semiconductor portion and a principal surface of the semiconductor substrate. The second semiconductor layer is a second conductive type III-V group compound semiconductor layer extending along the first semiconductor layer. The third semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the second semiconductor layer. The fourth semiconductor layer is a second conductive type III-V compound semiconductor layer provided on the third semiconductor layer.

Abstract translation: 在半导体基板的半导体部分的侧面上设置有多层半导体部。 在半导体部分和多层半导体部分上设置第二导电型III-V化合物半导体层。 多层半导体部分具有顺序地布置在半导体衬底上的第一至第四半导体层。 第一半导体层是沿着半导体部分的侧面和半导体衬底的主表面延伸的第一导电型III-V化合物半导体层。 第二半导体层是沿着第一半导体层延伸的第二导电型III-V族化合物半导体层。 第三半导体层是沿第二半导体层延伸的第一导电型III-V族化合物半导体层。 第四半导体层是设置在第三半导体层上的第二导电型III-V族化合物半导体层。

公开(公告)号：US20040037341A1

公开(公告)日：2004-02-26

申请号：US10227000

申请日：2002-08-21

Inventor： Michael R. Tan ,  Scott Corzine ,  Chao-Kun Lin

IPC: H01S003/083

CPC classification number: H01S5/1021 ,  G02B6/12007 ,  G02F1/0118 ,  G02F1/17 ,  G02F1/174 ,  G02F1/19 ,  G02F1/3137 ,  G02F2201/066 ,  G02F2202/108 ,  G02F2203/15 ,  H01S5/0614 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1071 ,  H01S5/142 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/323 ,  H01S2301/173

Abstract: A light source that includes first and second waveguides and a passive resonator for coupling light between the waveguides. The waveguides include a gain region for amplifying light of a desired wavelength, a transparent region, and an absorption region. The passive resonator couples light of the desired wavelength between the first and second transparent regions of the first and second waveguides and has a resonance at that wavelength. The resonator is preferably a microdisk resonator. The index of refraction of the microdisk resonator can be altered to select the desired wavelength. A second microdisk resonator having a different radius may be incorporated to increase the tuning range of the light source. The resonator is preferably constructed over the waveguides with an air gap between the resonator and the substrate in which the waveguides are constructed.

Abstract translation: 包括第一和第二波导的光源和用于在波导之间耦合光的无源谐振器。 波导包括用于放大所需波长的光的增益区域，透明区域和吸收区域。 无源谐振器将期望波长的光耦合在第一和第二波导的第一和第二透明区域之间，并且在该波长处具有谐振。 谐振器优选为微型磁盘谐振器。 可以改变微盘谐振器的折射率以选择所需的波长。 可以并入具有不同半径的第二微盘谐振器以增加光源的调谐范围。 谐振器优选地构造在波导上，在谐振器和其中构成波导的衬底之间具有气隙。

公开(公告)号：US20030156311A1

公开(公告)日：2003-08-21

申请号：US10197559

申请日：2002-07-18

Applicant: Mitsubishi Denki Kabushiki Kaisha

Inventor： Hitoshi Tada

IPC: G02F001/03 ,  G02F001/07 ,  G02F001/00

CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/066 ,  G02F2201/07

Abstract: A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.

Abstract translation: 在MQW吸收层和p-InP覆盖层之间提供具有比MQW（多量子阱）吸收层的带隙能量大的带隙能量并且小于p-InP覆盖层的带隙能量的带间断层， 。 此外，在MQW吸收层和n-InP覆盖层之间设置有具有比MQW吸收层的带隙能量大的带隙能量并且小于n-InP覆盖层的带隙能量减少层。 因此，随着载流子的堆积被抑制，可以获得具有增强的响应速度的半导体光调制器。

公开(公告)号：US06360048B1

公开(公告)日：2002-03-19

申请号：US09434485

申请日：1999-11-05

Applicant: Koji Yamada

Inventor： Koji Yamada

IPC: G02B610

CPC classification number: G02F1/025 ,  G02B6/423 ,  G02F2201/066 ,  G02F2201/12 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/0425 ,  H01S5/227 ,  H01S5/2275

Abstract: A waveguide optical semiconductor device, a method of fabricating the same and an optical device module. The semiconductor device includes a substrate, a waveguide formed on the substrate, an electrode layer formed on the waveguide, and bumpers formed on the substrate. The bumpers are disposed on both side of the waveguide, and top surfaces of the bumpers are higher than a top surface of the electrode layer. The method of fabrication includes forming semiconductor layers for waveguide on a substrate, forming another semiconductor layer on the semiconductor layers, removing the another semiconductor layer and at least a part of the semiconductor layers selectively so that grooves are formed on both side of a region where the waveguide are expected to be formed, removing the another semiconductor layer at the region, remained portions of the another semiconductor layer form bumpers. The module includes a waveguide optical semiconductor device having bumpers disposed on both side of the waveguide, and a carrier having a mounting region in contact with the top surfaces of the bumpers.

Abstract translation: 波导光半导体器件，其制造方法和光学器件模块。 半导体器件包括衬底，形成在衬底上的波导，形成在波导上的电极层和形成在衬底上的缓冲器。 缓冲器设置在波导的两侧，缓冲器的顶表面高于电极层的顶表面。 制造方法包括在衬底上形成用于波导的半导体层，在半导体层上形成另一个半导体层，选择性地去除另一半导体层和至少一部分半导体层，使得沟槽形成在 期望形成波导，去除该区域处的另一半导体层，保留另一半导体层的部分形成保险杠。 该模块包括具有布置在波导两侧的缓冲器的波导光学半导体器件和具有与缓冲器的顶表面接触的安装区域的载体。

公开(公告)号：US06282009B1

公开(公告)日：2001-08-28

申请号：US09245838

申请日：1999-02-08

Applicant: Hitoshi Tada ,  Tomoko Kadowaki

Inventor： Hitoshi Tada ,  Tomoko Kadowaki

IPC: G02F103

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/122

Abstract: A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section. After a mask has been formed on a portion of the primary insulating film opposite the bonding pad section, the remaining portion of the primary insulating film is etched, followed by removal of the mask. After the removal of the mask, a second insulating film is formed continuously covering the primary insulating film opposite the bonding pad section and the mesa section so that a relatively thick insulating layer is present only opposite the bonding pad section.

Abstract translation: 具有降低的寄生静电电容的光调制器包括具有台面部分和接合焊盘部分的半导体衬底。 基板上的主绝缘膜连续地覆盖台面部分和接合焊盘部分。 在与绝缘焊盘部分相对的一次绝缘膜的一部分上形成掩模之后，蚀刻一次绝缘膜的剩余部分，然后除去掩模。 在去除掩模之后，形成连续地覆盖与接合焊盘部分和台面部分相对的主绝缘膜的第二绝缘膜，使得相对较厚的绝缘层仅与接合焊盘部分相对。