Abstract:
Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
Abstract:
A semiconductor ceramic composition for use as a component of the body of NTC thermistors contains at least manganese and cobalt as main ingredients and both aluminum and titanium as additional ingredients for resistance adjustment by annealing. It becomes easier to adjust the resistance of the composition by annealing when the titanium content is equal to or lower than about 9.2 parts by weight on a TiO2 basis relative to 100 parts by weight of the main ingredients.
Abstract:
Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05≦x≦1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05≦x≦0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0≦x≦0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0≦x≦1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.
Abstract translation:提供了具有优异的涌流电流阻力的电阻元件,并且可以抑制稳定状态下的发热。 电阻元件具有半导体陶瓷的元件主体,其中主要成分具有R11-xR2xBaMn2O6的结构,其中当R1是Nd时为0.05 @ x @ 1.0,R2为Sm,Eu和Gd中的至少一种; 0.05≤x≤0.8,当R 1是Nd时,R 2是Tb,Dy,Ho,Er和Y中的至少一种; 当R1是Sm,Eu和Gd中的至少一种时,0≤x≤0.4,R2是Tb,Dy,Ho和Y中的至少一种; 当R1是Sm,Eu和Gd中的至少一种时,0 @ x @ 1.0,R2是Sm,Eu和Gd中的至少一种,但是R1中的Sm,Eu和/或Gd不同于 R2。
Abstract:
A chip thermistor has a thermistor portion including a ceramic material containing respective metal oxides of Mn, Ni, and Co as major ingredients; a pair of composite portions including a composite material of Ag—Pd, and respective metal oxides of Mn, Ni, and Co and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; and external electrodes connected to the pair of composite portions, respectively. In this manner, the pair of composite portions are used as bulk electrodes and, for this reason, the resistance of the chip thermistor can be adjusted mainly with consideration to the resistance in the thermistor portion without need for much consideration to the distance between the external electrodes and other factors.
Abstract:
A thermistor based on a composition having the general formula (I): Re2-x-yCraMnbMcEyOz wherein Re is a rare earth metal or a mixture of two or more rare earth metals, M is a metal selected from the group consisting of nickel, cobalt, copper, magnesium and mixtures thereof, E is a metal selected from the group consisting of calcium, strontium, barium and mixtures thereof, x is the sum of a+b+c and is a number between 0.1 and 1, and the relative ratio of the molar fractions a, b and c is in an area bounded by points A, B, C and D in a ternary diagram, wherein point A is, if y
Abstract:
A metal oxide sintered compact used for a thermistor includes a composite oxide represented by the general expression La(Cr1-xMnx)O3 (with x=0.0 to 0.6). Furthermore, the thermistor element 3 includes the metal oxide sintered compact 2 for a thermistor and a pair of leads 1, one terminal of each of which is fixed to the metal oxide sintered compact 2 for a thermistor.
Abstract:
A NTC thermistor which has superior linearity of resistance-temperature characteristic is provided without depending on a combination of two or more kinds of material but with a single semi-conductive ceramic material. As the semi-conductive ceramic material of negative resistance-temperature characteristic is a ceramic body constituting a NTC thermistor being an oxide expressed by the formula AMnyOz in which y is 0.8 to 1.6, A is a combination of rare earth element and barium and the content of barium in A is 60 to 75 mol % when y=0.8 to 1.5, and 50 to 63 mol % y=1.7 to 2.3, and z is a value which maintains the electric neutrality of the oxide. A preferable oxide is of the formula (La1-αBaα)MnyOz in which when y=0.8 to 1.5, 0.60≦α≦0.75, and when y=1.7 to 2.3, 0.50≦α≦0.63.
Abstract:
An electrical component having a base body includes a layer stack of mutually overlapping, electrically conductive electrode layers that are separated from one another by electrically conductive ceramic layers. The electrically conductive ceramic layers are composed of a ceramic whose specific electrical resistance exhibits a negative temperature coefficient. The electrically conductive ceramic layers are produced of ceramic green films that are sintered in common with the electrode layers, and outside electrodes that are electrically conductively connected to the electrode layers are arranged at two opposite outside surfaces of the base body. A method for the manufacture of the component and to the employment of the component is also provided.
Abstract:
A surface-mount negative-characteristic thermistor includes a ceramic body composed of a semiconductor ceramic material including at least one of Mn, Ni, and Ti; external electrodes disposed on surfaces of the ceramic body; and plating films disposed on surfaces of the external electrodes. When the molar quantity of Mn in the semiconductor ceramic material is represented by a and when the molar quantity of Ni in the semiconductor ceramic material is represented by b, the molar ratio of Mn to Ni is in the range of 55/45≦a/b≦90/10, and when the total molar quantity of Mn and Ni in the semiconductor ceramic material is defined as 100 parts by mole, the content of Ti is in the range of about 0.5 parts by mole to about 25 parts by mole.
Abstract translation:表面安装负特性热敏电阻包括由包括Mn,Ni和Ti中的至少一种的半导体陶瓷材料构成的陶瓷体; 设置在陶瓷体的表面上的外部电极; 以及设置在外部电极的表面上的镀膜。 当半导体陶瓷材料中的摩尔量由a表示时,并且当半导体陶瓷材料中的Ni的摩尔量表示为b时,Mn与Ni的摩尔比在55/45 <= a / b <= 90/10,并且当半导体陶瓷材料中的Mn和Ni的总摩尔量定义为100份摩尔时,Ti的含量在约0.5份摩尔至约25份的范围内 痣。
Abstract:
An electrical component includes a base having at least a first ceramic section and a second ceramic section. The first ceramic section and the second ceramic section include different materials, which have resistances with negative temperature coefficients. The component also includes first and second contact layers on the base. The first and second ceramic sections are between the first and second contact layers. A plurality of stacks of electrically conductive electrode layers are arranged inside the base. Stacks of electrode layers are electrically connected to the first and second contact layers.