公开(公告)号：US2960659A

公开(公告)日：1960-11-15

申请号：US53204355

申请日：1955-09-01

Applicant: BELL TELEPHONE LABOR INC

Inventor： BURTON JOSEPH A

IPC: B21D28/24 ,  H01J1/308

CPC classification number: H01J1/308 ,  B21D28/243

公开(公告)号：US09793083B2

公开(公告)日：2017-10-17

申请号：US15396701

申请日：2017-01-02

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01L29/06 ,  H01J19/24 ,  H01J9/02 ,  H01J9/18

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US20150206697A1

公开(公告)日：2015-07-23

申请号：US14600000

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  DE-JIE LI ,  CHUN-HAI ZHANG ,  DUAN-LIANG ZHOU ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J29/04 ,  H01J31/12 ,  H01J29/18

CPC classification number: H01J29/04 ,  H01B1/04 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J29/18 ,  H01J31/12 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an electron collection layer, an insulating layer, and a second electrode stacked with each other, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer.

Abstract translation: 电子发射装置包括彼此间隔开的多个电子发射单元，其中多个电子发射单元中的每一个包括第一电极，半导体层，电子收集层，绝缘层和每个电子发射单元堆叠的第二电极 另一方面，电子收集层与半导体层和绝缘层接触，并且电子收集层是导电层。

公开(公告)号：US20150206692A1

公开(公告)日：2015-07-23

申请号：US14599988

申请日：2015-01-19

Applicant: TSINGHUA UNIVERSITY ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  DE-JIE LI ,  CHUN-HAI ZHANG ,  DUAN-LIANG ZHOU ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J29/04 ,  H01J29/18 ,  H01J1/308

CPC classification number: H01J29/18 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes.

Abstract translation: 电子发射装置包括多个第一电极和多个彼此相交的第二电极以限定多个交点。 电子发射单元在每个交叉点的每一个处夹在第一电极和第二电极之间，其中电子发射单元包括层叠在一起的半导体层和绝缘层，半导体层限定多个孔，碳纳米管 层覆盖孔的数量，并且一部分碳纳米管层悬浮在孔的数量上。

公开(公告)号：US20150016842A1

公开(公告)日：2015-01-15

申请号：US14322019

申请日：2014-07-02

Applicant: Satomi SABU ,  Shinji OHTANI

Inventor： Satomi SABU ,  Shinji OHTANI

IPC: G03G15/02 ,  H01J27/20

CPC classification number: G03G15/02 ,  G03G15/0291 ,  G03G21/18 ,  H01J1/308 ,  H01J3/021 ,  H01T19/00

Abstract: A charger to apply a charge to an object is provided. The charger includes an electron emitter including an electroconductive substrate; and a layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms, which is located on the electroconductive substrate, wherein the concentration of oxygen atoms in the layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms is higher than the concentration of magnesium atoms in the layer.

Abstract translation: 提供一种向物体施加电荷的充电器。 该充电器包括一个包括导电基片的电子发射器; 和位于导电基体上的与镁和氧原子共掺杂的n型六方氮化硼层，其中与镁和氧原子共掺杂的n型六方氮化硼层中的氧原子的浓度高于 层中镁原子的浓度。

公开(公告)号：US20140326943A1

公开(公告)日：2014-11-06

申请号：US14234328

申请日：2012-07-20

Applicant: Jean-Claude Jacquet ,  Raphaël Aubry ,  Marie-Antoinette Poisson ,  Sylvain Delage

Inventor： Jean-Claude Jacquet ,  Raphaël Aubry ,  Marie-Antoinette Poisson ,  Sylvain Delage

IPC: H01J1/308

CPC classification number: H01J1/308 ,  H01J23/04

Abstract: A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.

Abstract translation: 用于真空中电子发射的半导体器件包括根据序列N /（P）/ N的两个或多个N型和P型半导体层的堆叠，形成两个头对尾NP结的并置，材料 属于III-N族，两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料，其中电子达到高能量，具有带隙Eg> c / 2，其中c是半导体材料的电子亲和力，P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得，以在层之间的任何界面中显示负的固定电荷，施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子， 需要通过输出层的发射区在真空中发射。

公开(公告)号：US20130248815A1

公开(公告)日：2013-09-26

申请号：US13849139

申请日：2013-03-22

Applicant: SANKEN ELECTRIC CO., LTD. ,  HAMAMATSU PHOTONICS K.K.

Inventor： Shunro FUKE ,  Tetsuji MATSUO ,  Yoshihiro ISHIGAMI ,  Tokuaki NIHASHI

IPC: H01J1/308 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J9/025 ,  H01J9/12 ,  H01J31/26 ,  H01J31/507

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0≦X

Abstract translation: 半导体光电阴极包括通过SiO 2层和形成在AlXGa1-XN层上的含碱金属的层结合到玻璃基板上的AlXGa1-XN层（0 @ X <1）。 AlXGa1-XN层包括第一区域，第二区域，第一区域和第二区域之间的中间区域。 第二区域具有通过交替层叠阻挡层和阱层而形成的半导体超晶格结构，中间区域具有通过交替层压阻挡层和阱层而形成的半导体超晶格结构。 当一对相邻的阻挡层和阱层被定义为单位部分时，单位部分中Al的组成比X的平均值随着距离第二区域和SiO 2层之间的界面位置的距离而至少在 中间区域。

公开(公告)号：US20080042144A1

公开(公告)日：2008-02-21

申请号：US11889389

申请日：2007-08-13

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01L29/15

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的基板和设置在基板上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US07307377B2

公开(公告)日：2007-12-11

申请号：US10952477

申请日：2004-09-29

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J1/02

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US20050264157A1

公开(公告)日：2005-12-01

申请号：US11140222

申请日：2005-05-31

Applicant: Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

Inventor： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC: H01J61/06 ,  H01J1/00 ,  H01J1/05 ,  H01J1/14 ,  H01J1/308 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J1/308 ,  H01J61/0677 ,  H01J61/0737

Abstract: A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.

Abstract translation: 一种放电灯，包括填充有放电气体的封闭管和设置在密封管中的放电电极。 放电电极包括支撑基底和由宽带隙半导体形成的电子发射层，并且设置在由多个突起构成的支撑基底上，突起的至少一部分表面从其上方的垂直方向看不见 电子发射层的顶表面，表面处的宽带隙半导体的悬挂键被氢原子终止。