Abstract:
A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2), An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).
Abstract:
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.
Abstract:
An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure having a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer, the first electrodes in the number of electron emission units are spaced apart from each other, and the second electrodes in the number of electron emission units are spaced apart from each other.
Abstract:
An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes.
Abstract:
An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure having a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer, the first electrodes in the number of electron emission units are spaced apart from each other, and the second electrodes in the number of electron emission units are spaced apart from each other.
Abstract:
An electron emitting element of the present invention includes an electron acceleration layer sandwiched between an electrode substrate and a thin-film electrode, and the electron acceleration layer includes a fine particle layer containing insulating fine particles and a basic dispersant. This makes it possible to provide an electron emitting element which does not cause insulation breakdown in an insulating layer and which can be produced at a low cost.
Abstract:
An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.
Abstract:
A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
Abstract:
One image is displayed in a period as one frame, which includes one charge accumulation period and one light emission period. In the charge accumulation period, all electron emitters are scanned, and voltages depending on the luminance levels of corresponding pixels are applied to the electron emitters which correspond to pixels to be turned on (to emit light), to accumulate charges (electrons) in amounts depending on the luminance levels of corresponding pixels in the electron emitters which correspond to pixels to be turned on. In the next light emission period, a constant voltage is applied to all the electron emitters to emit electrons in amounts depending on the luminance levels of corresponding pixels from the electron emitters which correspond to pixels to be turned on, thereby emitting light from the pixels to be turned on.
Abstract:
A display device which can operate at lower driving voltages and have improved luminous efficiency is disclosed. The display device includes: a first substrate and a second substrate with a plurality of cells therebetween, a plurality of first and second electrodes arranged between the first and second substrates, insulating layers respectively formed on the first electrodes. Electrons are accelerated and emitted into the cells when voltages are applied to the first and second electrodes. A gas within the cells is excited by the electrons, and light emitting layers formed between the first and second substrates or on outer sides of the first and second substrates emits light.