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公开(公告)号：US11887837B2
公开(公告)日：2024-01-30
申请号：US17296294
申请日：2019-12-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Norio Ichikawa , Kohei Ikeda
Abstract: An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.
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公开(公告)号：US09852898B2
公开(公告)日：2017-12-26
申请号：US14437345
申请日：2013-09-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshinori Honda , Hiroyuki Taketomi , Fumitsugu Fukuyo , Koji Kawai , Hidetsugu Takaoka , Takashi Suzuki
CPC classification number: H01J63/06 , C09K11/7774 , H01J63/04
Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).
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公开(公告)号：US09793685B2
公开(公告)日：2017-10-17
申请号：US14117560
申请日：2012-05-24
Applicant: Deli Wang , Muchuan Yang , Chun Li
Inventor： Deli Wang , Muchuan Yang , Chun Li
CPC classification number: H01S5/3401 , H01J63/06 , H01L33/0004
Abstract: A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.
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公开(公告)号：US09288885B2
公开(公告)日：2016-03-15
申请号：US13989200
申请日：2011-12-07
Applicant: Qiu-Hong Hu
Inventor： Qiu-Hong Hu
Abstract: The present invention relates to a field emission lighting arrangement, comprising an anode structure at least partly covered by a phosphor layer, an evacuated envelope inside of which an anode structure is arranged, and a field emission cathode, wherein the field emission lighting arrangement is configured to receive a drive signal for powering the field emission lighting arrangement and to sequentially activate selected portions of the phosphor layer for emitting light. The same control regime may be applied to an arrangement comprising a plurality of field emission cathodes and a single field emission anode. Advantages with the invention includes increase lifetime of the field emission lighting arrangement.
Abstract translation: 本发明涉及一种场发射照明装置，其包括至少部分地被荧光体层覆盖的阳极结构，其中布置有阳极结构的真空外壳和场发射阴极，其中，所述场发射照明装置被配置 以接收用于为场发射照明装置提供动力的驱动信号，并且依次激活用于发射光的磷光体层的选定部分。 相同的控制方式可以应用于包括多个场致发射阴极和单场发射阳极的装置。 本发明的优点包括增加场发射照明装置的寿命。
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5.发明授权Target for ultraviolet light generation, electron beam-excited ultraviolet light source, and production method for target for ultraviolet light generation 有权用于紫外线产生的目标，电子束激发的紫外光源和用于紫外线产生的靶的制备方法公开(公告)号：US09240313B2
公开(公告)日：2016-01-19
申请号：US14437376
申请日：2013-09-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshinori Honda , Hiroyuki Taketomi , Fumitsugu Fukuyo , Koji Kawai , Hidetsugu Takaoka , Norio Ichikawa , Takashi Suzuki
CPC classification number: H01J63/06 , C09K11/7774 , C23C16/40 , H01J63/04
Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.
Abstract translation: 紫外光产生的目标包括适于透射紫外光的基板和设置在基板上的发光层，并响应于电子束产生紫外光。 发光层包括由掺杂有活化剂的Lu和Si的氧化物多晶体或由掺杂有活化剂的含稀土的铝石榴石多晶构成的多晶膜构成的多晶膜。
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Patent Agency Ranking
公开(公告)号：US09237622B2
公开(公告)日：2016-01-12
申请号：US14369235
申请日：2012-12-21
Applicant: Lightlab Sweden AB
Inventor： Goran Mork , Jonas Tiren
IPC: H05B41/14 , H05B41/233 , H05B33/08 , H01J63/06
CPC classification number: H05B33/0854 , H01J63/06 , H05B33/0815 , H05B33/0896 , H05B41/233
Abstract: The present invention relates to a power supply for a field emission light source. The novel power supply allows for a reduction in size as well as allowing for improvements relating to power factor and efficiency. The size reduction further allows the power supply to efficiently be integrated together with the field emission light source forming a lighting device.
Abstract translation: 本发明涉及一种场致发射光源的电源。 新颖的电源允许减小尺寸以及允许与功率因数和效率相关的改进。 尺寸减小进一步允许电源与形成照明装置的场发射光源有效地集成在一起。
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公开(公告)号：US09184559B2
公开(公告)日：2015-11-10
申请号：US13884820
申请日：2011-10-11
Applicant: Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
Inventor： Masanori Yamaguchi , Ken Kataoka , Tsuyoshi Maesoba , Hiroyuki Takada , Hiroshige Hata
CPC classification number: H01S5/041 , B82Y20/00 , H01J63/02 , H01J63/06 , H01L2224/48091 , H01S5/02208 , H01S5/04 , H01S5/34333 , H01L2924/00014
Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
Abstract translation: 本发明旨在提供能够以电子束均匀地照射半导体发光器件的一个表面的电子束泵浦光源，并且能够在不增加电子束的加速电压的情况下获得高的光输出 并且还能够有效地冷却半导体发光器件。 本发明的电子束泵浦光源包括：电子束源和由电子束源发射的电子束激发的半导体发光器件，其特征在于电子束源包括平面电子束 并且配置在半导体发光元件的周围，光从半导体发光元件的电子束源的电子束入射的表面射出。
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8.发明授权Luminescent element including nitride, preparation method thereof and luminescence method 有权发光元件包括氮化物，其制备方法和发光方法公开(公告)号：US09096792B2
公开(公告)日：2015-08-04
申请号：US13392449
申请日：2009-08-26
Applicant: Mingjie Zhou , Wenbo Ma , Jing Tang
Inventor： Mingjie Zhou , Wenbo Ma , Jing Tang
CPC classification number: C09K11/0883 , C09K11/7706 , C09K11/7721 , C09K11/7734 , C09K11/7749 , C09K11/7764 , H01J63/04 , H01J63/06 , H01J2329/20 , H05B33/145 , Y10T428/265 , Y10T428/31678
Abstract: A luminescent element including nitride includes a luminescent film and a metal layer with a metal microstructure formed on a surface of the luminescent film; wherein the luminescent film has a chemical composition: Ga1-xAlxN:yRe, wherein Re represents the rare earth element, 0≦x≦1, 0
Abstract translation: 包括氮化物的发光元件包括发光膜和在发光膜的表面上形成有金属微结构的金属层; 其中所述发光膜具有化学组成：Ga1-xAlxN：yRe，其中Re表示稀土元素，0＆nlE; x＆nlE; 1,0
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公开(公告)号：US09064669B2
公开(公告)日：2015-06-23
申请号：US13942092
申请日：2013-07-15
Applicant: National Defense University
Inventor： Yih-Ming Liu , Meng-Jey Youh , Nen-Wen Pu , Ming-Der Ger , Kevin Cheng , Kun-Ju Chung , Jhih-Cheng Jiang , Guan-Fang Xu
Abstract: A field emission cathode comprises at least one electron emitting parcel, and at least one ion absorbing parcel each being electrically connected with each of the at least one electron emitting parcel. The electron emitting parcel includes a first substrate and a nano emission component disposed on the first substrate for emitting electrons in an electric field. The ion absorbing parcel is constituted by a second substrate, in which the electric conductivity of the first substrate is less than that of the second substrate. A field emission light comprises the said field emission cathode, a field emission anode and a power supply. Thus the positive ions in an electric field can be absorbed by ion absorbing parcels to suppress an ion bombardment in the electric field. The efficiency of the electric field of the field emission is then maintained, and the lifetime of the field emission light is enhanced.
Abstract translation: 场发射阴极包括至少一个电子发射包裹物，以及至少一个离子吸收包裹，每个离子吸收包裹与所述至少一个电子发射包裹中的每一个电连接。 电子发射包裹物包括第一衬底和设置在第一衬底上的用于在电场中发射电子的纳米发射部件。 离子吸收包裹由第二基板构成，其中第一基板的电导率小于第二基板的电导率。 场发射光包括所述场致发射阴极，场发射阳极和电源。 因此，电场中的正离子可以被离子吸收包裹吸收，以抑制电场中的离子轰击。 然后保持场发射的电场效率，并且增强场发射光的寿命。
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公开(公告)号：US20150015166A1
公开(公告)日：2015-01-15
申请号：US13942092
申请日：2013-07-15
Applicant: National Defense University
Inventor： Yih-Ming LIU , Meng-Jey YOUH , Nen-Wen PU , Ming-Der GER , Kevin CHENG , Kun-Ju CHUNG , Jhih-Cheng JIANG , Guan-Fang XU
Abstract: A field emission cathode comprises at least one electron emitting parcel, and at least one ion absorbing parcel each being electrically connected with each of the at least one electron emitting parcel. The electron emitting parcel includes a first substrate and a nano emission component disposed on the first substrate for emitting electrons in an electric field. The ion absorbing parcel is constituted by a second substrate, in which the electric conductivity of the first substrate is less than that of the second substrate. A field emission light comprises the said field emission cathode, a field emission anode and a power supply. Thus the positive ions in an electric field can be absorbed by ion absorbing parcels to suppress an ion bombardment in the electric field. The efficiency of the electric field of the field emission is then maintained, and the lifetime of the field emission light is enhanced.
Abstract translation: 场发射阴极包括至少一个电子发射包裹物，以及至少一个离子吸收包裹，每个离子吸收包裹与所述至少一个电子发射包裹中的每一个电连接。 电子发射包裹物包括第一衬底和设置在第一衬底上的用于在电场中发射电子的纳米发射部件。 离子吸收包裹由第二基板构成，其中第一基板的电导率小于第二基板的电导率。 场发射光包括所述场致发射阴极，场发射阳极和电源。 因此，电场中的正离子可以被离子吸收包裹吸收，以抑制电场中的离子轰击。 然后保持场发射的电场效率，并且增强场发射光的寿命。
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