公开(公告)号：US20020090453A1

公开(公告)日：2002-07-11

申请号：US09982342

申请日：2001-10-18

Applicant: Synergistic Ventures, Inc.

Inventor： Jeno Muthiah ,  Gerald K. White ,  Duane R. Rubash

IPC: B05D001/12 ,  B05D001/36 ,  B05D003/06

CPC classification number: A61F13/53 ,  A61F13/15658 ,  A61F2013/530481

Abstract: The invention provides processes for coating the surface of polymeric materials such as a sheet, film, foam, fiber, etc., with a curable liquid resin or solution of curable resin, then in one embodiment, stably attaching a superabsorbent polymeric powder to such resin, and then curing the resin to form a coated superabsorbent product. Other process embodiments and resulting products are included in the invention. The coated product has reduced particle agglomeration and particle loss due to the curing step. The product can be interposed between sheets to form disposable absorbent products such as diapers, bandages, etc. or used on one side to form cleaning products.

Abstract translation: 本发明提供了用可固化液体树脂或可固化树脂溶液涂覆聚合物材料如片，膜，泡沫，纤维等表面的方法，然后在一个实施方案中，将超吸收性聚合物粉末稳定地附着在这种树脂上 ，然后固化树脂以形成涂覆的超吸收性产品。 其他工艺实施例和所得产品包括在本发明中。 涂覆的产品由于固化步骤而减少了颗粒聚集和颗粒损失。 产品可以介于片材之间以形成诸如尿布，绷带等的一次性吸收产品，或者在一侧上用于形成清洁产品。

公开(公告)号：US20020071913A1

公开(公告)日：2002-06-13

申请号：US10013472

申请日：2001-12-13

Inventor： Chu Hou Jen

IPC: B05D003/06 ,  B05D003/02 ,  B05D003/12 ,  B05D001/18 ,  B05D005/12

CPC classification number: H01M4/0409 ,  H01M2/145 ,  H01M4/04 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0416 ,  H01M4/0435

Abstract: The present invention provides a manufacturing device of electrochemical cell components in a battery comprising a preliminary dip tank, baking box, main dip tank, and dipping device, drying tower and consolidating device. The present invention also provides a process for manufacturing electrochemical cell components in a battery comprising applying electrode materials over metal current collector webs or carbon (or glass) fiber fabric webs with dipping, baking and consolidating steps to make various kinds of electrochemical cell components in a battery (e.g. a cathode, anode, and separator) for use in subsequent processes of making a battery.

Abstract translation: 本发明提供一种电池中的电化学电池部件的制造装置，其特征在于，包括预浸料槽，烘箱，主浸槽，浸渍装置，干燥塔和固化装置。 本发明还提供一种用于在电池中制造电化学电池部件的方法，该方法包括在金属集流体网或碳（或玻璃）纤维织物网上施加电极材料，其中浸渍，烘烤和固化步骤使得各种电化学电池组分在 电池（例如阴极，阳极和分离器），用于制造电池的后续过程。

公开(公告)号：US20020031615A1

公开(公告)日：2002-03-14

申请号：US09871007

申请日：2001-05-31

Inventor： John W. Dykes ,  Joel W. Hoehn ,  James E. Angelo ,  William D. Mosley

IPC: C23C014/34 ,  C08J007/18 ,  B05D003/06

CPC classification number: G11B5/8408 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152 ,  C23C14/0605 ,  C23C14/30 ,  C23C14/3414 ,  C23C14/46 ,  C30B23/02 ,  C30B29/02 ,  C30B33/00 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/40 ,  G11B5/722 ,  G11B5/82 ,  G11B7/122 ,  G11B7/24 ,  G11B7/26 ,  G11B11/10582 ,  G11B11/10586 ,  Y10S977/734 ,  Y10S977/847 ,  Y10S977/89

Abstract: A target of fullerene is placed with a substrate in a vacuum chamber. A charged beam, i.e., an electron beam or an ion beam, is directed at the target with a power adequate to emit fullerene molecules from the target and not high enough to form significant amounts of fullerene having a higher molecular structure than the target fullerenes. Fullerene is deposited on the substrate. Regardless of the approach used to deposit the fullerenes, the substrate can be heated during deposition to a temperature above the fullerene-to-fullerene disorption temperature to form a coating consisting of an approximate monolayer of fullerene.

公开(公告)号：US20020018862A1

公开(公告)日：2002-02-14

申请号：US09954797

申请日：2001-09-10

Applicant: Applied Kamatsu Technology, Inc.

Inventor： Chuang-Chuang Tsai ,  Takako Takehara ,  Regina Qiu ,  Yvonne LeGrice ,  William Reid Harshbarger ,  Robert McCormick Robertson

IPC: B05D003/02 ,  B05D003/06

CPC classification number: H01L21/0262 ,  C03C17/22 ,  C03C2217/282 ,  C03C2218/152 ,  C03C2218/32 ,  C23C16/0209 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02661

Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.

Abstract translation: 可以在玻璃基板上通过预热基板，在第一温度下在基板上沉积非晶硅前体层，并在热处理室中将第一温度充分高于第一温度的基板退火至玻璃基板上， 显着降低前体层中的氢浓度。 预热和退火步骤可以发生在相同的热处理室中。 然后通过激光退火将前体层转化为多晶硅层。

公开(公告)号：US20010055649A1

公开(公告)日：2001-12-27

申请号：US09866843

申请日：2001-05-30

Inventor： Naoaki Ogure ,  Kuniaki Horie ,  Yuji Araki ,  Hiroshi Nagasaka ,  Momoko Kakutani ,  Tohru Satake

IPC: C23C016/00 ,  B05D003/06 ,  G21H001/00 ,  B05D003/00 ,  C08J007/18

CPC classification number: H01J37/32422 ,  C23C16/18 ,  C23C16/452 ,  C23C16/486 ,  C23C16/487 ,  H01J37/3233 ,  H01L21/28556 ,  H01L21/32136

Abstract: There is provided a method of applying a surface treatment, such as coating, denaturation, modification and etching, to a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas thereby facilitating the reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, in a coating operation, chemically deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion in the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

Abstract translation: 提供了将表面处理如涂层，变性，改性和蚀刻施加到基材的表面的方法。 该方法包括以下步骤：使表面处理气体与基板的表面接触，并用快速粒子束照射基板的表面，以增强表面和/或表面处理气体的活性，从而促进反应 在表面和气体之间。 快速粒子束可以选自电子束，带电粒子束，原子束和分子束。 例如，在涂布操作中，将气体的预定组分元素化学沉积到表面上，并且用颗粒束照射基板表面中的预定部分，以在预定部分上形成涂层。

公开(公告)号：US20010051231A1

公开(公告)日：2001-12-13

申请号：US08847946

申请日：1997-05-01

Inventor： BARRY C. MUFFOLETTO ,  ASHISH SHAH ,  DONALD H. STEPHENSON

IPC: B05D003/06

CPC classification number: H01G4/008 ,  C23C14/5833 ,  C23C14/5893 ,  C23C16/56 ,  C23C26/00 ,  C23C26/02 ,  H01G9/042 ,  H01M4/661 ,  Y10S148/90 ,  Y10S428/926 ,  Y10S428/931 ,  Y10T428/8305

Abstract: A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high energy beam can be an ion beam from a high energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.

Abstract translation: 1.一种用于改善金属，金属合金或金属氧化物的基底的导电性的方法，包括从ⅦA族金属（Fe，Ru，Os，Co，Rh，Ir，Ni，Pd等）中沉积少量或少量的金属或金属， Pt）或VA族金属（V，Nb，Ta）的金属，金属合金和/或金属氧化物的基底上的IA族金属（Cu，Ag，Au） 将VIA金属（Cr，Mo，W）和Al，Mn，Ni和Cu组合，然后将高能束引导到衬底上，以使沉积材料与衬底金属或金属合金的天然氧化物混合。 天然氧化物层由电绝缘转变为导电。 沉积步骤可以例如通过离子束辅助沉积，电子束沉积，化学气相沉积，物理气相沉积，等离子体辅助，低压等离子体和等离子体喷涂沉积等进行。 高能束可以是来自高能离子源的离子束，也可以是激光束。 沉积可以在处理的或未处理的基底上进行。 具有导电性的自然氧化物层的衬底可用于制造诸如电容器和电池的器件的电极。

公开(公告)号：US20010044480A1

公开(公告)日：2001-11-22

申请号：US09842430

申请日：2001-04-26

Inventor： Patrick L. Paglia ,  Christian Ruepping

IPC: B05D003/06 ,  C08F002/50

CPC classification number: C08F265/06 ,  C08F255/02 ,  C08F259/08 ,  C08F263/04 ,  C08F265/04 ,  C08F279/02 ,  C08F291/02 ,  C08L33/08 ,  C09K3/10 ,  C09K2003/1068 ,  C09K2200/0612 ,  C09K2200/062 ,  C09K2200/0625 ,  C08F222/1006 ,  C08F222/10 ,  C08F2/02 ,  C08L2666/28

Abstract: Ethylene copolymer elastomer compositions, acrylate rubber compositions, nitrile rubber compositions, fluoroelastomer compositions, and chlorinated elastomer compositions are provided which are curable by exposure to UV radiation. The compositions are particularly suited for production of elastomeric seals using hot melt equipment and a gasketing in place technique.

Abstract translation: 提供了乙烯共聚物弹性体组合物，丙烯酸酯橡胶组合物，丁腈橡胶组合物，含氟弹性体组合物和氯化弹性体组合物，其可通过暴露于UV辐射固化。 该组合物特别适用于使用热熔融设备和垫圈技术生产弹性密封件。

公开(公告)号：US20010040144A1

公开(公告)日：2001-11-15

申请号：US09352817

申请日：1999-07-13

Inventor： EUGENE P. MARSH

IPC: C25F003/00 ,  B05D003/06

CPC classification number: B05D1/62 ,  C23C16/4405 ,  C23C16/4481 ,  Y10S438/905

Abstract: In one aspect, the invention encompasses a method of utilizing a vaporization surface as an electrode to form a plasma within a vapor forming device. In another aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma. In another aspect, the invention encompasses a vapor forming device. Such device includes a non-vapor-state-material input region, a vaporization surface, and a flow path between the non-vapor-state-material input region and the vaporization surface. The device further includes a vapor-state-material output region, and a vapor flow path from the vaporization surface to the vapor-state-material output region. Additionally, the device includes a first plasma electrode spaced from the vaporization surface, and plasma generation circuitry configured to utilize the vaporization surface as a second plasma electrode such that a plasma can be formed between the first and second plasma electrodes.

Abstract translation: 一方面，本发明包括利用汽化表面作为电极在蒸汽形成装置内形成等离子体的方法。 另一方面，本发明包括化学气相沉积的方法。 提供蒸发表面并加热。 至少一种材料流过加热表面以蒸发材料。 在蒸发期间在蒸发表面上形成沉积物。 然后将汽化表面用作电极以形成等离子体，并且用等离子体去除沉积物的至少一部分。 另一方面，本发明包括蒸气形成装置。 这种装置包括非气态物质输入区域，蒸发表面以及非气态物质输入区域和汽化表面之间的流动路径。 该装置还包括蒸汽状态材料输出区域和从蒸发表面到蒸气状态 - 材料输出区域的蒸汽流动路径。 另外，该装置包括与蒸发表面间隔开的第一等离子体电极和等离子体产生电路，该等离子体产生电路构造成利用蒸发表面作为第二等离子体电极，使得能够在第一和第二等离子体电极之间形成等离子体。

公开(公告)号：US20010038919A1

公开(公告)日：2001-11-08

申请号：US09681332

申请日：2001-03-19

Inventor： Ivan L. Berry III ,  Todd Bridgewater ,  Wei Chen ,  Qingyuan Han ,  Eric S. Moyer ,  Michael J. Spaulding ,  Carlo Waldfried

IPC: B05D003/06

CPC classification number: H01L21/02134 ,  C01B33/126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695

Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 SinullH groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350null C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically less than about 475null C., and the annealing time is typically no more than about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

Abstract translation: 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。 网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。 该涂层在小于约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。 与等离子体固化的多孔网络涂层相比，等离子体固化涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度通常小于约475℃，退火时间通常不超过约180秒。 退火的等离子体固化涂层的介电常数范围为约1.1至约2.4，并具有改善的弹性模量。

公开(公告)号：US20010038889A1

公开(公告)日：2001-11-08

申请号：US09232359

申请日：1999-01-15

Inventor： SUZETTE K. PANGRLE ,  RICHARD HUANG ,  SHEKHAR PRAMANICK

IPC: B05D003/06 ,  C08J007/04 ,  C08J007/18

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31695

Abstract: The invention provides a system and a method for densifying a surface of a porous film. By reducing the porosity of a film, the method yields a densified film that is more impenetrable to subsequent liquid processes. The method comprises the steps of providing a film having an exposed surface. The film can be supported by a semiconductor substrate. When the film is moved to a processing position, a focused source of radiation is created by a beam source. The exposed surface of the film is then irradiated by the beam source at the processing position until a predetermined dielectric constant is achieved. The film or beam source may be rotated, inclined, and/or moved between a variety of positions to ensure that the exposed surface of the film is irradiated evenly.

Abstract translation: 本发明提供一种用于致密化多孔膜表面的系统和方法。 通过降低膜的孔隙率，该方法产生对随后的液体过程更不可穿透的致密化膜。 该方法包括提供具有暴露表面的膜的步骤。 膜可以由半导体衬底支撑。 当胶片移动到处理位置时，由光源产生聚焦的辐射源。 然后将膜的曝光表面在处理位置由光束源照射，直到达到预定的介电常数。 膜或束源可以在各种位置之间旋转，倾斜和/或移动，以确保膜的暴露表面被均匀地照射。